Fairchild/ON Semiconductor FGH40N60SFTU

Name: FGH40N60SFTU
Brand: Fairchild/ON Semiconductor
SKU: 3813766-FGH40N60SFTU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FGH40N60SFTU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3813766-FGH40N60SFTU

Description:: IGBT 600V 80A 290W TO247

ECAD Model:

Datasheet:: FGH40N60SFTU

Specifications

Fairchild/ON Semiconductor FGH40N60SFTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH40N60SFTU.

Factory Lead Time
9 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
290W
Base Part Number
FGH40N60
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
290W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
JEDEC-95 Code
TO-247AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.3V
Max Breakdown Voltage
1.2kV
Turn On Time
67 ns
Test Condition
400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 40A
Turn Off Time-Nom (toff)
150 ns
IGBT Type
Field Stop
Gate Charge
120nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
25ns/115ns
Switching Energy
1.13mJ (on), 310μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
54ns
Height
20.6mm
Length
15.6mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

The Fairchild Semiconductor FGH40N60SFTU IGBT Single Transistor is a general purpose transistor designed for use in a variety of applications. This device features an 80 A current rating, 2.3 V voltage rating, 290 W power rating, and 600 V breakdown voltage. It is packaged in a TO-247AB package with three pins. This IGBT is designed to provide high efficiency and low switching losses, making it ideal for use in power conversion applications. It also features a low gate charge and low gate-emitter voltage, making it suitable for high frequency switching applications. The FGH40N60SFTU is a reliable and cost-effective solution for a variety of applications.

FGH40N60SFTU More Descriptions

Trans IGBT Chip N=-CH 600V 80A 290000mW 3-Pin(3 Tab) TO-247 Tube
FAIRCHILD SEMICONDUCTOR FGH40N60SFTU IGBT Single Transistor, General Purpose, 80 A, 2.3 V, 290 W, 600 V, TO-247AB, 3 Pins
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
IGBT,N CH,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

Product Comparison

The three parts on the right have similar specifications to FGH40N60SFTU.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Max Power Dissipation

Base Part Number

Number of Elements

Element Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lifecycle Status

Turn On Delay Time

Turn-Off Delay Time

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce(on) (Max) @ Vge, Ic:

Test Condition:

Td (on/off) @ 25°C:

Switching Energy:

Supplier Device Package:

Series:

Reverse Recovery Time (trr):

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Type:

IGBT Type:

Gate Charge:

Current - Collector Pulsed (Icm):

Current - Collector (Ic) (Max):

View Compare
FGH40N60SFTU

Fairchild/ON Semiconductor

9 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2011

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

LOW CONDUCTION LOSS

8541.29.00.95

Insulated Gate BIP Transistors

290W

FGH40N60

1

Single

COLLECTOR

Standard

290W

POWER CONTROL

N-CHANNEL

600V

80A

TO-247AB

600V

2.3V

1.2kV

67 ns

400V, 40A, 10 Ω, 15V

2.9V @ 15V, 40A

150 ns

Field Stop

120nC

120A

25ns/115ns

1.13mJ (on), 310μJ (off)

20V

6.5V

54ns

20.6mm

15.6mm

4.7mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FGH40N60UFTU

Fairchild/ON Semiconductor

6 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2015

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

LOW CONDUCTION LOSS

8541.29.00.95

Insulated Gate BIP Transistors

290W

FGH40N60

1

Single

COLLECTOR

Standard

290W

POWER CONTROL

N-CHANNEL

600V

80A

TO-247AB

600V

1.8V

-

110 ns

400V, 40A, 10 Ω, 15V

2.4V @ 15V, 40A

190 ns

Field Stop

120nC

120A

24ns/112ns

1.19mJ (on), 460μJ (off)

20V

6.5V

100ns

20.6mm

15.6mm

4.7mm

No SVHC

No

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

24 ns

112 ns

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FGH40N60SFTU vs FGH40N60UFTU
FGH40N60SFDTU_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

600V

2.9V @ 15V, 40A

400V, 40A, 10 Ohm, 15V

21ns/138ns

1.23mJ (on), 380µJ (off)

TO-247

Automotive, AEC-Q101

68ns

290W

Tube

TO-247-3

-55°C ~ 150°C (TJ)

Through Hole

Standard

Field Stop

121nC

120A

80A

FGH40N60SFTU vs FGH40N60SFDTU_F085
FGH40T65SH_F155

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

650V

2.1V @ 15V, 40A

400V, 40A, 6 Ohm, 15V

19.2ns/65.6ns

1.01mJ (on), 297µJ (off)

TO-247 Long Leads

-

-

268W

Tube

TO-247-3

-55°C ~ 175°C (TJ)

Through Hole

Standard

Trench Field Stop

72.2nC

120A

80A

FGH40N60SFTU vs FGH40T65SH_F155