STMicroelectronics STGP10H60DF
- Part Number:
- STGP10H60DF
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3587245-STGP10H60DF
- Description:
- IGBT 600V 20A 115W TO220
- ECAD Model:
-
- Datasheet:
- STGP10H60DF
STMicroelectronics STGP10H60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP10H60DF.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation115W
- Base Part NumberSTGP10
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max115W
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current20A
- Reverse Recovery Time107 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.5V
- Test Condition400V, 10A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 10A
- IGBT TypeTrench Field Stop
- Gate Charge57nC
- Current - Collector Pulsed (Icm)40A
- Td (on/off) @ 25°C19.5ns/103ns
- Switching Energy83μJ (on), 140μJ (off)
- Height15.75mm
- Length10.4mm
- Width4.6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGP10H60DF Description
These devices STGP10H60DF are IGBT developed using advanced proprietary trench gate field barrier structure. These devices are part of the H-series IGBT, and the IGBT represents the best tradeoff between turn-on loss and switching loss to maximize the efficiency of high-switching converters. In addition, a slightly positive VCE (Sat) temperature coefficient and a very tight parameter distribution make parallel operation safer.
STGP10H60DF Features
? High speed switching ? Tight parameters distribution ? Safe paralleling ? Low thermal resistance ? Short-circuit rated ? Ultrafast soft recovery antiparallel diode
STGP10H60DF Applications
? Motor control ? UPS ? PFC
These devices STGP10H60DF are IGBT developed using advanced proprietary trench gate field barrier structure. These devices are part of the H-series IGBT, and the IGBT represents the best tradeoff between turn-on loss and switching loss to maximize the efficiency of high-switching converters. In addition, a slightly positive VCE (Sat) temperature coefficient and a very tight parameter distribution make parallel operation safer.
STGP10H60DF Features
? High speed switching ? Tight parameters distribution ? Safe paralleling ? Low thermal resistance ? Short-circuit rated ? Ultrafast soft recovery antiparallel diode
STGP10H60DF Applications
? Motor control ? UPS ? PFC
STGP10H60DF More Descriptions
Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin(3 Tab) TO-220AB Tube
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
H Series 600 V 20 A Through Hole Silicon IGBT - TO-220-3
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, SINGLE, 600V, 20A, TO-220AB; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 115W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
H Series 600 V 20 A Through Hole Silicon IGBT - TO-220-3
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, SINGLE, 600V, 20A, TO-220AB; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 115W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
The three parts on the right have similar specifications to STGP10H60DF.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationBase Part NumberElement ConfigurationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyHeightLengthWidthRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialSeriesNumber of TerminationsSubcategoryPin CountJESD-30 CodeNumber of ElementsTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeTurn Off Time-Nom (toff)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxPower DissipationTurn On Delay TimeRise TimeTurn-Off Delay TimeTurn On TimeREACH SVHCView Compare
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STGP10H60DFACTIVE (Last Updated: 7 months ago)20 WeeksThrough HoleThrough HoleTO-220-336.000006g-55°C~175°C TJTubeActive1 (Unlimited)EAR99115WSTGP10SingleStandard115W600V20A107 ns600V1.5V400V, 10A, 10 Ω, 15V1.95V @ 15V, 10ATrench Field Stop57nC40A19.5ns/103ns83μJ (on), 140μJ (off)15.75mm10.4mm4.6mmNoROHS3 CompliantLead Free-------------------- -
--Through HoleThrough HoleTO-220-3---55°C~150°C TJTubeObsolete1 (Unlimited)-250WSTGP100SingleStandard250W330V90A-330V-180V, 25A, 10 Ω, 15V2.5V @ 15V, 50A----/134ns----NoROHS3 Compliant-SILICONSTripFET™3Insulated Gate BIP Transistors3R-PSFM-T31GENERAL PURPOSE SWITCHINGN-CHANNELTO-220AB310 ns20V5.5V------
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-20 WeeksThrough HoleThrough HoleTO-220-3---55°C~175°C TJTubeActive1 (Unlimited)EAR99167WSTGP20SingleStandard-600V40A40ns600V2.3V400V, 20A, 15V2.2V @ 15V, 20ATrench Field Stop116nC80A38ns/149ns200μJ (on), 130μJ (off)---NoROHS3 Compliant----Insulated Gate BIP Transistors----N-CHANNEL--20V-167W-----
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ACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-33--55°C~150°C TJTubeActive1 (Unlimited)EAR99130WSTGP19SingleStandard-600V40A31ns600V2.5V390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A-53nC60A25ns/97ns85μJ (on), 189μJ (off)15.75mm10.4mm4.6mmNoROHS3 CompliantLead FreeSILICONPowerMESH™3Insulated Gate BIP Transistors3-1POWER CONTROLN-CHANNELTO-220AB272 ns20V5.75V130W25 ns7ns97 ns32 nsNo SVHC
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