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STGP20V60DF

STMicroelectronics STGP20V60DF

Part Number:
STGP20V60DF
Manufacturer:
STMicroelectronics
Ventron No:
3071974-STGP20V60DF
Description:
IGBT 600V 40A 167W TO220AB
ECAD Model:
Datasheet:
STGP20V60DF

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Specifications
STMicroelectronics STGP20V60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP20V60DF.
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    167W
  • Base Part Number
    STGP20
  • Element Configuration
    Single
  • Power Dissipation
    167W
  • Input Type
    Standard
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    40A
  • Reverse Recovery Time
    40ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.3V
  • Test Condition
    400V, 20A, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 20A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    116nC
  • Current - Collector Pulsed (Icm)
    80A
  • Td (on/off) @ 25°C
    38ns/149ns
  • Switching Energy
    200μJ (on), 130μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STGP20V60DF Description
The STGP20V60DF  is an IGBT developed using an advanced proprietary trench gate and field stop structure. It is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. 

STGP20V60DF Features
Maximum junction temperature: TJ = 175 °C
Very high-speed switching series
Tail-less switching off
Low saturation voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Lead-free package

STGP20V60DF Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high-frequency converters
STGP20V60DF More Descriptions
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Trans IGBT Chip N-CH 600V 40A 3-Pin(3 Tab) TO-220AB Tube
Igbt, 600V, 40A, 175Deg C, 167W Rohs Compliant: Yes |Stmicroelectronics STGP20V60DF
Product Comparison
The three parts on the right have similar specifications to STGP20V60DF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Power Dissipation
    Input Type
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Radiation Hardening
    RoHS Status
    Number of Pins
    Transistor Element Material
    Number of Terminations
    Number of Elements
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    Height
    Length
    Width
    Lifecycle Status
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Power - Max
    REACH SVHC
    Series
    Pin Count
    Turn On Delay Time
    Rise Time
    Turn-Off Delay Time
    Gate-Emitter Thr Voltage-Max
    Lead Free
    View Compare
  • STGP20V60DF
    STGP20V60DF
    STMicroelectronics
    20 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    167W
    STGP20
    Single
    167W
    Standard
    N-CHANNEL
    600V
    40A
    40ns
    600V
    2.3V
    400V, 20A, 15V
    2.2V @ 15V, 20A
    Trench Field Stop
    116nC
    80A
    38ns/149ns
    200μJ (on), 130μJ (off)
    20V
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGP30V60DF
    STGP30V60DF
    STMicroelectronics
    20 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    258W
    STGP30
    Single
    258W
    Standard
    N-CHANNEL
    600V
    60A
    53ns
    600V
    2.35V
    400V, 30A, 10 Ω, 15V
    2.3V @ 15V, 30A
    Trench Field Stop
    163nC
    120A
    45ns/189ns
    383μJ (on), 233μJ (off)
    20V
    No
    ROHS3 Compliant
    3
    SILICON
    3
    1
    COLLECTOR
    POWER CONTROL
    TO-220AB
    59 ns
    225 ns
    15.75mm
    10.4mm
    4.6mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGP20V60DF vs STGP30V60DF
  • STGP10M65DF2
    STGP10M65DF2
    STMicroelectronics
    30 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    -
    115W
    STGP10
    Single
    -
    Standard
    -
    2V
    20A
    96 ns
    650V
    1.55V
    400V, 10A, 22 Ω, 15V
    2V @ 15V, 10A
    Trench Field Stop
    28nC
    40A
    19ns/91ns
    120μJ (on), 270μJ (off)
    -
    -
    ROHS3 Compliant
    3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 7 months ago)
    NOT SPECIFIED
    NOT SPECIFIED
    115W
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    STGP20V60DF vs STGP10M65DF2
  • STGP19NC60HD
    STGP19NC60HD
    STMicroelectronics
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    130W
    STGP19
    Single
    130W
    Standard
    N-CHANNEL
    600V
    40A
    31ns
    600V
    2.5V
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    -
    53nC
    60A
    25ns/97ns
    85μJ (on), 189μJ (off)
    20V
    No
    ROHS3 Compliant
    3
    SILICON
    3
    1
    -
    POWER CONTROL
    TO-220AB
    32 ns
    272 ns
    15.75mm
    10.4mm
    4.6mm
    ACTIVE (Last Updated: 8 months ago)
    -
    -
    -
    No SVHC
    PowerMESH™
    3
    25 ns
    7ns
    97 ns
    5.75V
    Lead Free
    STGP20V60DF vs STGP19NC60HD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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