STMicroelectronics STGP30V60DF
- Part Number:
- STGP30V60DF
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3072119-STGP30V60DF
- Description:
- IGBT 600V 60A 258W TO220AB
- ECAD Model:
-
- Datasheet:
- STGP30V60DF
STMicroelectronics STGP30V60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP30V60DF.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation258W
- Base Part NumberSTGP30
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation258W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current60A
- Reverse Recovery Time53ns
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.35V
- Turn On Time59 ns
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 30A
- Turn Off Time-Nom (toff)225 ns
- IGBT TypeTrench Field Stop
- Gate Charge163nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C45ns/189ns
- Switching Energy383μJ (on), 233μJ (off)
- Gate-Emitter Voltage-Max20V
- Height15.75mm
- Length10.4mm
- Width4.6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STGP30V60DF Description
The STGP30V60DF is an IGBT developed using an advanced proprietary trench gate field stop structure.
STGP30V60DF Features
Maximum junction temperature: TJ= 175 °C
Tail-less switching off
VCE(sat)= 1.85 V (typ.) @ IC= 30 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
STGP30V60DF Applications
Industrial
General Uses
The STGP30V60DF is an IGBT developed using an advanced proprietary trench gate field stop structure.
STGP30V60DF Features
Maximum junction temperature: TJ= 175 °C
Tail-less switching off
VCE(sat)= 1.85 V (typ.) @ IC= 30 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
STGP30V60DF Applications
Industrial
General Uses
STGP30V60DF More Descriptions
V Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220
Trans IGBT Chip N-CH 600V 60A 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Igbt, Single, 600V, 60A, To-220; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-220; No. Of Pins:3Pins; Rohs Compliant: Yes |Stmicroelectronics STGP30V60DF
Trans IGBT Chip N-CH 600V 60A 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Igbt, Single, 600V, 60A, To-220; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-220; No. Of Pins:3Pins; Rohs Compliant: Yes |Stmicroelectronics STGP30V60DF
The three parts on the right have similar specifications to STGP30V60DF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationBase Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxHeightLengthWidthRadiation HardeningRoHS StatusLifecycle StatusWeightSeriesJESD-609 CodeTerminal FinishVoltage - Rated DCCurrent RatingPin CountTurn On Delay TimeDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Continuous Collector CurrentGate-Emitter Thr Voltage-MaxREACH SVHCLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power - MaxView Compare
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STGP30V60DF20 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeActive1 (Unlimited)3EAR99Insulated Gate BIP Transistors258WSTGP301Single258WCOLLECTORStandardPOWER CONTROLN-CHANNEL600V60A53nsTO-220AB600V2.35V59 ns400V, 30A, 10 Ω, 15V2.3V @ 15V, 30A225 nsTrench Field Stop163nC120A45ns/189ns383μJ (on), 233μJ (off)20V15.75mm10.4mm4.6mmNoROHS3 Compliant------------------- -
20 WeeksThrough HoleThrough HoleTO-220-3---55°C~175°C TJTubeActive1 (Unlimited)-EAR99Insulated Gate BIP Transistors167WSTGP20-Single167W-Standard-N-CHANNEL600V40A40ns-600V2.3V-400V, 20A, 15V2.2V @ 15V, 20A-Trench Field Stop116nC80A38ns/149ns200μJ (on), 130μJ (off)20V---NoROHS3 Compliant------------------
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8 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeActive1 (Unlimited)3EAR99Insulated Gate BIP Transistors80WSTGP101Single80W-StandardPOWER CONTROLN-CHANNEL600V29A-TO-220AB600V1.7V1160 ns480V, 10A, 1k Ω, 15V1.75V @ 15V, 10A3100 ns-33nC80A700ns/1.2μs600μJ (on), 5mJ (off)20V9.15mm10.4mm4.6mmNoROHS3 CompliantACTIVE (Last Updated: 8 months ago)6.000006gPowerMESH™e3Matte Tin (Sn) - annealed600V10A37 μs600V10A10A5VNo SVHCLead Free---
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30 WeeksThrough HoleThrough HoleTO-220-33--55°C~175°C TJTubeActive1 (Unlimited)-EAR99-115WSTGP10-Single--Standard--2V20A96 ns-650V1.55V-400V, 10A, 22 Ω, 15V2V @ 15V, 10A-Trench Field Stop28nC40A19ns/91ns120μJ (on), 270μJ (off)-----ROHS3 CompliantACTIVE (Last Updated: 7 months ago)------------No SVHC-NOT SPECIFIEDNOT SPECIFIED115W
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