STMicroelectronics STGP10M65DF2

Name: STGP10M65DF2
Brand: STMicroelectronics
SKU: 2854608-STGP10M65DF2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGP10M65DF2

Manufacturer:: STMicroelectronics

Ventron No:: 2854608-STGP10M65DF2

Description:: IGBT 650V 10A TO-220AB

ECAD Model:

Datasheet:: STGP10M65DF2

Specifications

STMicroelectronics STGP10M65DF2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP10M65DF2.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
30 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
115W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGP10
Element Configuration
Single
Input Type
Standard
Power - Max
115W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
20A
Reverse Recovery Time
96 ns
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.55V
Test Condition
400V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 10A
IGBT Type
Trench Field Stop
Gate Charge
28nC
Current - Collector Pulsed (Icm)
40A
Td (on/off) @ 25°C
19ns/91ns
Switching Energy
120μJ (on), 270μJ (off)
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

STGP10M65DF2 Description
The STGP10M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. It is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

STGP10M65DF2 Features
6 μs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C

STGP10M65DF2 Applications
Motor control
UPS
PFC
General purpose inverter

STGP10M65DF2 More Descriptions

Trench gate field-stop IGBT M series, 650 V 10 A low loss
Trans IGBT Chip N-CH 650V 20A 115000mW 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 20A I(C), 650V V(BR)CES, N-Channel, TO-220AB
IGBT, SINGLE, 650V, 20A, TO-220-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 115W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pi

Product Comparison

The three parts on the right have similar specifications to STGP10M65DF2.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Element Configuration

Input Type

Power - Max

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

REACH SVHC

RoHS Status

Subcategory

Power Dissipation

Polarity/Channel Type

Gate-Emitter Voltage-Max

Radiation Hardening

Transistor Element Material

Series

Number of Terminations

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Transistor Application

JEDEC-95 Code

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Thr Voltage-Max

Turn On Delay Time

Rise Time

Turn-Off Delay Time

Height

Length

Width

Lead Free

View Compare
STGP10M65DF2

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

30 Weeks

Through Hole

Through Hole

TO-220-3

3

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

115W

NOT SPECIFIED

NOT SPECIFIED

STGP10

Single

Standard

115W

2V

20A

96 ns

650V

1.55V

400V, 10A, 22 Ω, 15V

2V @ 15V, 10A

Trench Field Stop

28nC

40A

19ns/91ns

120μJ (on), 270μJ (off)

No SVHC

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGP20V60DF

STMicroelectronics

-

20 Weeks

Through Hole

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

167W

-

-

STGP20

Single

Standard

-

600V

40A

40ns

600V

2.3V

400V, 20A, 15V

2.2V @ 15V, 20A

Trench Field Stop

116nC

80A

38ns/149ns

200μJ (on), 130μJ (off)

-

ROHS3 Compliant

Insulated Gate BIP Transistors

167W

N-CHANNEL

20V

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGP10M65DF2 vs STGP20V60DF
STGP19NC60W

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

-65°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

-

130W

NOT SPECIFIED

NOT SPECIFIED

STGP19

Single

Standard

130W

600V

40A

-

600V

-

390V, 12A, 10 Ω, 15V

2.5V @ 15V, 12A

-

53nC

-

25ns/90ns

81μJ (on), 125μJ (off)

-

ROHS3 Compliant

Insulated Gate BIP Transistors

-

N-CHANNEL

20V

-

SILICON

PowerMESH™

3

3

R-PSFM-T3

Not Qualified

1

POWER CONTROL

TO-220AB

33 ns

204 ns

5.75V

-

-

-

-

-

-

-

STGP10M65DF2 vs STGP19NC60W
STGP19NC60HD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Through Hole

Through Hole

TO-220-3

3

-55°C~150°C TJ

Tube

Active

1 (Unlimited)

EAR99

130W

-

-

STGP19

Single

Standard

-

600V

40A

31ns

600V

2.5V

390V, 12A, 10 Ω, 15V

2.5V @ 15V, 12A

-

53nC

60A

25ns/97ns

85μJ (on), 189μJ (off)

No SVHC

ROHS3 Compliant

Insulated Gate BIP Transistors

130W

N-CHANNEL

20V

No

SILICON

PowerMESH™

3

3

-

-

1

POWER CONTROL

TO-220AB

32 ns

272 ns

5.75V

25 ns

7ns

97 ns

15.75mm

10.4mm

4.6mm

Lead Free

STGP10M65DF2 vs STGP19NC60HD