STMicroelectronics STGP10NB60S
- Part Number:
- STGP10NB60S
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854904-STGP10NB60S
- Description:
- IGBT 600V 29A 80W TO220
- ECAD Model:
-
- Datasheet:
- STGP10NB60S
STMicroelectronics STGP10NB60S technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP10NB60S.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight6.000006g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation80W
- Current Rating10A
- Base Part NumberSTGP10
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation80W
- Input TypeStandard
- Turn On Delay Time7 μs
- Transistor ApplicationPOWER CONTROL
- Drain to Source Voltage (Vdss)600V
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current29A
- Continuous Drain Current (ID)10A
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.7V
- Turn On Time1160 ns
- Test Condition480V, 10A, 1k Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.75V @ 15V, 10A
- Continuous Collector Current10A
- Turn Off Time-Nom (toff)3100 ns
- Gate Charge33nC
- Current - Collector Pulsed (Icm)80A
- Td (on/off) @ 25°C700ns/1.2μs
- Switching Energy600μJ (on), 5mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGP10NB60S Description
STGP10NB60S is a Power MESH? process from the manufacturer of STMicroelectronics. The operating temperature of STGP10NB60S is -55°C~150°C TJ and its maximum power dissipation are 80W. It is available in the TO-220-3 packaging way. This IGBT utilizes the advanced Power MESH? process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
STGP10NB60S Features
Low on-voltage drop (VCE(sat))
High current capability
STGP10NB60S Applications
Light dimmer
Static relays
Motor drive
STGP10NB60S is a Power MESH? process from the manufacturer of STMicroelectronics. The operating temperature of STGP10NB60S is -55°C~150°C TJ and its maximum power dissipation are 80W. It is available in the TO-220-3 packaging way. This IGBT utilizes the advanced Power MESH? process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
STGP10NB60S Features
Low on-voltage drop (VCE(sat))
High current capability
STGP10NB60S Applications
Light dimmer
Static relays
Motor drive
STGP10NB60S More Descriptions
STGP10NB60S Series N-Channel 600 V 10 A PowerMESH IGBT - TO-220
Trans IGBT Chip N-CH 600V 29A 80000mW 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 1.35V, 29A, TO-220-3; DC Collector Current: 29A; Collector Emitter Saturation Voltage Vce(on): 1.35V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins
Trans IGBT Chip N-CH 600V 29A 80000mW 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 1.35V, 29A, TO-220-3; DC Collector Current: 29A; Collector Emitter Saturation Voltage Vce(on): 1.35V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins
The three parts on the right have similar specifications to STGP10NB60S.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationInput TypeTurn On Delay TimeTransistor ApplicationDrain to Source Voltage (Vdss)Polarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentContinuous Drain Current (ID)JEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcContinuous Collector CurrentTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodePower - MaxReverse Recovery TimeIGBT TypeRise TimeTurn-Off Delay TimeView Compare
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STGP10NB60SACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-336.000006gSILICON-55°C~150°C TJTubePowerMESH™e3Active1 (Unlimited)3EAR99Matte Tin (Sn) - annealedInsulated Gate BIP Transistors600V80W10ASTGP1031Single80WStandard7 μsPOWER CONTROL600VN-CHANNEL600V29A10ATO-220AB600V1.7V1160 ns480V, 10A, 1k Ω, 15V1.75V @ 15V, 10A10A3100 ns33nC80A700ns/1.2μs600μJ (on), 5mJ (off)20V5V9.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free------- -
--Through HoleThrough HoleTO-220-3--SILICON-55°C~150°C TJTubeSTripFET™-Obsolete1 (Unlimited)3--Insulated Gate BIP Transistors-250W-STGP10031Single-Standard-GENERAL PURPOSE SWITCHING-N-CHANNEL330V90A-TO-220AB330V--180V, 25A, 10 Ω, 15V2.5V @ 15V, 50A-310 ns---/134ns-20V5.5V----NoROHS3 Compliant-R-PSFM-T3250W----
-
-20 WeeksThrough HoleThrough HoleTO-220-3----55°C~175°C TJTube--Active1 (Unlimited)-EAR99-Insulated Gate BIP Transistors-167W-STGP20--Single167WStandard---N-CHANNEL600V40A--600V2.3V-400V, 20A, 15V2.2V @ 15V, 20A--116nC80A38ns/149ns200μJ (on), 130μJ (off)20V-----NoROHS3 Compliant---40nsTrench Field Stop--
-
ACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-33-SILICON-55°C~150°C TJTubePowerMESH™-Active1 (Unlimited)3EAR99-Insulated Gate BIP Transistors-130W-STGP1931Single130WStandard25 nsPOWER CONTROL-N-CHANNEL600V40A-TO-220AB600V2.5V32 ns390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A-272 ns53nC60A25ns/97ns85μJ (on), 189μJ (off)20V5.75V15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free--31ns-7ns97 ns
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