STMicroelectronics STGP100N30

Name: STGP100N30
Brand: STMicroelectronics
SKU: 3072049-STGP100N30
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGP100N30

Manufacturer:: STMicroelectronics

Ventron No:: 3072049-STGP100N30

Description:: IGBT 330V 90A 250W TO220

ECAD Model:

Datasheet:: STGP100N30

Specifications

STMicroelectronics STGP100N30 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP100N30.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
STripFET™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
250W
Base Part Number
STGP100
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
250W
Transistor Application
GENERAL PURPOSE SWITCHING
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
330V
Max Collector Current
90A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
330V
Test Condition
180V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 50A
Turn Off Time-Nom (toff)
310 ns
Td (on/off) @ 25°C
-/134ns
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

STGP100N30 Description STGP100N30 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGP100N30 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration. STGP100N30 Features Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging STGP100N30 Applications ISM applications DC large signal applications Power factor correction Electronic lamp ballasts Flat panel display

STGP100N30 More Descriptions

Trans IGBT Chip N-CH 330V 90A 3-Pin(3 Tab) TO-220 Tube
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 120pF 200volts C0G /-5% Hi Rel
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STGP100N30.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Subcategory

Max Power Dissipation

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Td (on/off) @ 25°C

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Radiation Hardening

RoHS Status

Lifecycle Status

Factory Lead Time

ECCN Code

Power Dissipation

Reverse Recovery Time

Collector Emitter Saturation Voltage

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Switching Energy

Lead Free

Number of Pins

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

REACH SVHC

Turn On Delay Time

Rise Time

Turn-Off Delay Time

Turn On Time

Height

Length

Width

View Compare
STGP100N30

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

STripFET™

Obsolete

1 (Unlimited)

3

Insulated Gate BIP Transistors

250W

STGP100

3

R-PSFM-T3

1

Single

Standard

250W

GENERAL PURPOSE SWITCHING

N-CHANNEL

330V

90A

TO-220AB

330V

180V, 25A, 10 Ω, 15V

2.5V @ 15V, 50A

310 ns

-/134ns

20V

5.5V

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGP30H60DF

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-40°C~175°C TJ

Tube

-

Active

1 (Unlimited)

-

Insulated Gate BIP Transistors

260W

STGP30

-

-

-

Single

Standard

-

-

N-CHANNEL

600V

60A

-

600V

400V, 30A, 10 Ω, 15V

2.4V @ 15V, 30A

-

50ns/160ns

20V

-

No

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

20 Weeks

EAR99

260W

110 ns

2.4V

Trench Field Stop

105nC

120A

350μJ (on), 400μJ (off)

Lead Free

-

-

-

-

-

-

-

-

-

-

-

STGP100N30 vs STGP30H60DF
STGP10M65DF2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

-

Active

1 (Unlimited)

-

-

115W

STGP10

-

-

-

Single

Standard

115W

-

-

2V

20A

-

650V

400V, 10A, 22 Ω, 15V

2V @ 15V, 10A

-

19ns/91ns

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 7 months ago)

30 Weeks

EAR99

-

96 ns

1.55V

Trench Field Stop

28nC

40A

120μJ (on), 270μJ (off)

-

3

NOT SPECIFIED

NOT SPECIFIED

No SVHC

-

-

-

-

-

-

-

STGP100N30 vs STGP10M65DF2
STGP19NC60HD

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

Active

1 (Unlimited)

3

Insulated Gate BIP Transistors

130W

STGP19

3

-

1

Single

Standard

-

POWER CONTROL

N-CHANNEL

600V

40A

TO-220AB

600V

390V, 12A, 10 Ω, 15V

2.5V @ 15V, 12A

272 ns

25ns/97ns

20V

5.75V

No

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

8 Weeks

EAR99

130W

31ns

2.5V

-

53nC

60A

85μJ (on), 189μJ (off)

Lead Free

3

-

-

No SVHC

25 ns

7ns

97 ns

32 ns

15.75mm

10.4mm

4.6mm

STGP100N30 vs STGP19NC60HD