STMicroelectronics STGP19NC60HD

Name: STGP19NC60HD
Brand: STMicroelectronics
SKU: 2854607-STGP19NC60HD
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGP19NC60HD

Manufacturer:: STMicroelectronics

Ventron No:: 2854607-STGP19NC60HD

Description:: IGBT 600V 40A 130W TO220

ECAD Model:

Datasheet:: STGP19NC60HD

Specifications

STMicroelectronics STGP19NC60HD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP19NC60HD.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
130W
Base Part Number
STGP19
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
130W
Input Type
Standard
Turn On Delay Time
25 ns
Transistor Application
POWER CONTROL
Rise Time
7ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
97 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
40A
Reverse Recovery Time
31ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Turn On Time
32 ns
Test Condition
390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 12A
Turn Off Time-Nom (toff)
272 ns
Gate Charge
53nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
25ns/97ns
Switching Energy
85μJ (on), 189μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STGP19NC60HD Description

These devices are ultra-high speed IGBT. They use advanced Power Mesh fabrication technology to achieve an excellent tradeoff between switching performance and low-open state behavior.

STGP19NC60HD Features

Low on-voltage drop (VCE(sat))
Very soft Ultrafast recovery anti-parallel diode

STGP19NC60HD Application

Optimized for hard-switching applications up to 20 kHz

STGP19NC60HD More Descriptions

Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(3 Tab) TO-220AB Tube
STGP19NC60HD Series 600 V 19 A Very Fast IGBT Flange Mount - TO-220
STMICROELECTRONICS STGP19NC60HD IGBT Single Transistor, 40 A, 2.5 V, 130 W, 600 V, TO-220, 3 Pins
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
19 A, 600 V, very fast IGBT with Ultrafast diode
IGBT, N 600V 19A TO-220; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O

Product Comparison

The three parts on the right have similar specifications to STGP19NC60HD.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

IGBT Type

Weight

JESD-609 Code

Terminal Finish

Voltage - Rated DC

Current Rating

Drain to Source Voltage (Vdss)

Continuous Drain Current (ID)

Continuous Collector Current

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Power - Max

View Compare
STGP19NC60HD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

Active

1 (Unlimited)

3

EAR99

Insulated Gate BIP Transistors

130W

STGP19

3

1

Single

130W

Standard

25 ns

POWER CONTROL

7ns

N-CHANNEL

97 ns

600V

40A

31ns

TO-220AB

600V

2.5V

32 ns

390V, 12A, 10 Ω, 15V

2.5V @ 15V, 12A

272 ns

53nC

60A

25ns/97ns

85μJ (on), 189μJ (off)

20V

5.75V

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGP20V60DF

STMicroelectronics

-

20 Weeks

Through Hole

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

-

Active

1 (Unlimited)

-

EAR99

Insulated Gate BIP Transistors

167W

STGP20

-

-

Single

167W

Standard

-

-

-

N-CHANNEL

-

600V

40A

40ns

-

600V

2.3V

-

400V, 20A, 15V

2.2V @ 15V, 20A

-

116nC

80A

38ns/149ns

200μJ (on), 130μJ (off)

20V

-

-

-

-

-

No

ROHS3 Compliant

-

Trench Field Stop

-

-

-

-

-

-

-

-

-

-

-

-

-

STGP19NC60HD vs STGP20V60DF
STGP10NB60S

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

Active

1 (Unlimited)

3

EAR99

Insulated Gate BIP Transistors

80W

STGP10

3

1

Single

80W

Standard

7 μs

POWER CONTROL

-

N-CHANNEL

-

600V

29A

-

TO-220AB

600V

1.7V

1160 ns

480V, 10A, 1k Ω, 15V

1.75V @ 15V, 10A

3100 ns

33nC

80A

700ns/1.2μs

600μJ (on), 5mJ (off)

20V

5V

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

6.000006g

e3

Matte Tin (Sn) - annealed

600V

10A

600V

10A

10A

-

-

-

-

-

STGP19NC60HD vs STGP10NB60S
STGP19NC60W

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-65°C~150°C TJ

Tube

PowerMESH™

Obsolete

1 (Unlimited)

3

-

Insulated Gate BIP Transistors

130W

STGP19

3

1

Single

-

Standard

-

POWER CONTROL

-

N-CHANNEL

-

600V

40A

-

TO-220AB

600V

-

33 ns

390V, 12A, 10 Ω, 15V

2.5V @ 15V, 12A

204 ns

53nC

-

25ns/90ns

81μJ (on), 125μJ (off)

20V

5.75V

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

130W

STGP19NC60HD vs STGP19NC60W