STMicroelectronics STGP3HF60HD
- Part Number:
- STGP3HF60HD
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3554834-STGP3HF60HD
- Description:
- IGBT BIPO 600V 3A TO220
- Datasheet:
- STGP3HF60HD
STMicroelectronics STGP3HF60HD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP3HF60HD.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation38W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGP3
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max38W
- Collector Emitter Voltage (VCEO)2.95V
- Max Collector Current7.5A
- Reverse Recovery Time85 ns
- Collector Emitter Breakdown Voltage600V
- Test Condition400V, 1.5A, 100 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.95V @ 15V, 1.5A
- Gate Charge12nC
- Current - Collector Pulsed (Icm)18A
- Td (on/off) @ 25°C11ns/60ns
- Switching Energy19μJ (on), 12μJ (off)
- Height15.75mm
- Length10.4mm
- Width4.6mm
- RoHS StatusROHS3 Compliant
STGP3HF60HD Description
STGP3HF60HD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses.
STGP3HF60HD Features
Minimal tail current
Low conduction and switching losses
Ultrafast soft recovery antiparallel diode
STGP3HF60HD Applications
Motor drive
STGP3HF60HD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses.
STGP3HF60HD Features
Minimal tail current
Low conduction and switching losses
Ultrafast soft recovery antiparallel diode
STGP3HF60HD Applications
Motor drive
STGP3HF60HD More Descriptions
Trans IGBT Chip N-CH 600V 7.5A 3-Pin TO-220 Tube
Insulated Gate Bipolar Transistor, 7.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB
4.5 A, 600 V very fast IGBT with Ultrafast diode
TRANSISTOR, IGBT, 600V, 7.5A, TO-220; Continuous Collector Current:7.5A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:38W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 7.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB
4.5 A, 600 V very fast IGBT with Ultrafast diode
TRANSISTOR, IGBT, 600V, 7.5A, TO-220; Continuous Collector Current:7.5A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:38W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
The three parts on the right have similar specifications to STGP3HF60HD.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberElement ConfigurationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyHeightLengthWidthRoHS StatusWeightTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsTerminal FinishSubcategoryVoltage - Rated DCCurrent RatingPin CountNumber of ElementsPower DissipationTurn On Delay TimeTransistor ApplicationDrain to Source Voltage (Vdss)Polarity/Channel TypeContinuous Drain Current (ID)JEDEC-95 CodeCollector Emitter Saturation VoltageTurn On TimeContinuous Collector CurrentTurn Off Time-Nom (toff)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCRadiation HardeningLead FreeJESD-30 CodeQualification StatusIGBT TypeView Compare
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STGP3HF60HDACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-33-55°C~150°C TJTubeActive1 (Unlimited)EAR9938WNOT SPECIFIEDNOT SPECIFIEDSTGP3SingleStandard38W2.95V7.5A85 ns600V400V, 1.5A, 100 Ω, 15V2.95V @ 15V, 1.5A12nC18A11ns/60ns19μJ (on), 12μJ (off)15.75mm10.4mm4.6mmROHS3 Compliant-------------------------------
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ACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-33-55°C~150°C TJTubeActive1 (Unlimited)EAR9980W--STGP10SingleStandard-600V29A-600V480V, 10A, 1k Ω, 15V1.75V @ 15V, 10A33nC80A700ns/1.2μs600μJ (on), 5mJ (off)9.15mm10.4mm4.6mmROHS3 Compliant6.000006gSILICONPowerMESH™e33Matte Tin (Sn) - annealedInsulated Gate BIP Transistors600V10A3180W7 μsPOWER CONTROL600VN-CHANNEL10ATO-220AB1.7V1160 ns10A3100 ns20V5VNo SVHCNoLead Free---
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--Through HoleThrough HoleTO-220-3--65°C~150°C TJTubeObsolete1 (Unlimited)-130WNOT SPECIFIEDNOT SPECIFIEDSTGP19SingleStandard130W600V40A-600V390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A53nC-25ns/90ns81μJ (on), 125μJ (off)---ROHS3 Compliant-SILICONPowerMESH™-3-Insulated Gate BIP Transistors--31--POWER CONTROL-N-CHANNEL-TO-220AB-33 ns-204 ns20V5.75V---R-PSFM-T3Not Qualified-
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ACTIVE (Last Updated: 7 months ago)30 WeeksThrough HoleThrough HoleTO-220-33-55°C~175°C TJTubeActive1 (Unlimited)EAR99115WNOT SPECIFIEDNOT SPECIFIEDSTGP10SingleStandard115W2V20A96 ns650V400V, 10A, 22 Ω, 15V2V @ 15V, 10A28nC40A19ns/91ns120μJ (on), 270μJ (off)---ROHS3 Compliant------------------1.55V-----No SVHC----Trench Field Stop
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