STMicroelectronics STGP19NC60W

Name: STGP19NC60W
Brand: STMicroelectronics
SKU: 2854692-STGP19NC60W
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGP19NC60W

Manufacturer:: STMicroelectronics

Ventron No:: 2854692-STGP19NC60W

Description:: IGBT 600V 40A 130W TO220

ECAD Model:

Datasheet:: STGx19NC60W

Specifications

STMicroelectronics STGP19NC60W technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP19NC60W.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
130W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGP19
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
130W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
40A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Turn On Time
33 ns
Test Condition
390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 12A
Turn Off Time-Nom (toff)
204 ns
Gate Charge
53nC
Td (on/off) @ 25°C
25ns/90ns
Switching Energy
81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
RoHS Status
ROHS3 Compliant

Description

STGP19NC60W Description
This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior.

STGP19NC60W Features
■ High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility) STGP19NC60W Applications
■ High frequency motor controls, inverters, UPS ■ HF, SMPS and PFC in both hard switch and resonant topologies

STGP19NC60W More Descriptions

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Trans IGBT Chip N-CH 600V 40A 3-Pin(3 Tab) TO-220 Tube
IGBT Transistors N-CH 600V Ultra fast PowerMESH

Product Comparison

The three parts on the right have similar specifications to STGP19NC60W.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Subcategory

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Radiation Hardening

Lifecycle Status

Factory Lead Time

ECCN Code

Power Dissipation

Reverse Recovery Time

Collector Emitter Saturation Voltage

IGBT Type

Current - Collector Pulsed (Icm)

Lead Free

Number of Pins

REACH SVHC

View Compare
STGP19NC60W

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-65°C~150°C TJ

Tube

PowerMESH™

Obsolete

1 (Unlimited)

3

Insulated Gate BIP Transistors

130W

NOT SPECIFIED

NOT SPECIFIED

STGP19

3

R-PSFM-T3

Not Qualified

1

Single

Standard

130W

POWER CONTROL

N-CHANNEL

600V

40A

TO-220AB

600V

33 ns

390V, 12A, 10 Ω, 15V

2.5V @ 15V, 12A

204 ns

53nC

25ns/90ns

81μJ (on), 125μJ (off)

20V

5.75V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-
STGP100N30

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

STripFET™

Obsolete

1 (Unlimited)

3

Insulated Gate BIP Transistors

250W

-

-

STGP100

3

R-PSFM-T3

-

1

Single

Standard

250W

GENERAL PURPOSE SWITCHING

N-CHANNEL

330V

90A

TO-220AB

330V

-

180V, 25A, 10 Ω, 15V

2.5V @ 15V, 50A

310 ns

-

-/134ns

-

20V

5.5V

ROHS3 Compliant

No

-

-

-

-

-

-

-

-

-

-

-

STGP19NC60W vs STGP100N30
STGP30H60DF

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-40°C~175°C TJ

Tube

-

Active

1 (Unlimited)

-

Insulated Gate BIP Transistors

260W

-

-

STGP30

-

-

-

-

Single

Standard

-

-

N-CHANNEL

600V

60A

-

600V

-

400V, 30A, 10 Ω, 15V

2.4V @ 15V, 30A

-

105nC

50ns/160ns

350μJ (on), 400μJ (off)

20V

-

ROHS3 Compliant

No

ACTIVE (Last Updated: 8 months ago)

20 Weeks

EAR99

260W

110 ns

2.4V

Trench Field Stop

120A

Lead Free

-

-

STGP19NC60W vs STGP30H60DF
STGP10M65DF2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

-

Active

1 (Unlimited)

-

-

115W

NOT SPECIFIED

NOT SPECIFIED

STGP10

-

-

-

-

Single

Standard

115W

-

-

2V

20A

-

650V

-

400V, 10A, 22 Ω, 15V

2V @ 15V, 10A

-

28nC

19ns/91ns

120μJ (on), 270μJ (off)

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 7 months ago)

30 Weeks

EAR99

-

96 ns

1.55V

Trench Field Stop

40A

-

3

No SVHC

STGP19NC60W vs STGP10M65DF2