STMicroelectronics STGP30H60DF

Name: STGP30H60DF
Brand: STMicroelectronics
SKU: 3072037-STGP30H60DF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGP30H60DF

Manufacturer:: STMicroelectronics

Ventron No:: 3072037-STGP30H60DF

Description:: IGBT 600V 60A 260W TO220

ECAD Model:

Datasheet:: STGP30H60DF

Specifications

STMicroelectronics STGP30H60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP30H60DF.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
260W
Base Part Number
STGP30
Element Configuration
Single
Power Dissipation
260W
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
60A
Reverse Recovery Time
110 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.4V
Test Condition
400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
IGBT Type
Trench Field Stop
Gate Charge
105nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
50ns/160ns
Switching Energy
350μJ (on), 400μJ (off)
Gate-Emitter Voltage-Max
20V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STGP30H60DF Description

STGP30H60DF is an IGBT transistor in TO-220 package from STMicroelectronics. This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of high frequency converters. This device can be applied in Inverter, UPS, and PFC due to the following features. And its ideal operating temperature is between -40 and 175℃.
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
STGP30H60DF Features

Ultrafast soft recovery antiparallel diode
High speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short circuit rated

STGP30H60DF Applications

Inverter
UPS
PFC
Lighting
Medical

STGP30H60DF More Descriptions

Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3 Tab) TO-220AB Tube
600 V, 30 A high speed trench gate field-stop IGBT
IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)

Product Comparison

The three parts on the right have similar specifications to STGP30H60DF.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Subcategory

Max Power Dissipation

Base Part Number

Element Configuration

Power Dissipation

Input Type

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

Series

Number of Terminations

Pin Count

JESD-30 Code

Number of Elements

Power - Max

Transistor Application

JEDEC-95 Code

Turn Off Time-Nom (toff)

Gate-Emitter Thr Voltage-Max

Number of Pins

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

REACH SVHC

View Compare
STGP30H60DF

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

20 Weeks

Through Hole

Through Hole

TO-220-3

-40°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

Insulated Gate BIP Transistors

260W

STGP30

Single

260W

Standard

N-CHANNEL

600V

60A

110 ns

600V

2.4V

400V, 30A, 10 Ω, 15V

2.4V @ 15V, 30A

Trench Field Stop

105nC

120A

50ns/160ns

350μJ (on), 400μJ (off)

20V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGP100N30

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

-

Insulated Gate BIP Transistors

250W

STGP100

Single

-

Standard

N-CHANNEL

330V

90A

-

330V

-

180V, 25A, 10 Ω, 15V

2.5V @ 15V, 50A

-

-

-

-/134ns

-

20V

No

ROHS3 Compliant

-

SILICON

STripFET™

3

3

R-PSFM-T3

1

250W

GENERAL PURPOSE SWITCHING

TO-220AB

310 ns

5.5V

-

-

-

-

STGP30H60DF vs STGP100N30
STGP20V60DF

STMicroelectronics

-

20 Weeks

Through Hole

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

Insulated Gate BIP Transistors

167W

STGP20

Single

167W

Standard

N-CHANNEL

600V

40A

40ns

600V

2.3V

400V, 20A, 15V

2.2V @ 15V, 20A

Trench Field Stop

116nC

80A

38ns/149ns

200μJ (on), 130μJ (off)

20V

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGP30H60DF vs STGP20V60DF
STGP10M65DF2

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

30 Weeks

Through Hole

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

-

115W

STGP10

Single

-

Standard

-

2V

20A

96 ns

650V

1.55V

400V, 10A, 22 Ω, 15V

2V @ 15V, 10A

Trench Field Stop

28nC

40A

19ns/91ns

120μJ (on), 270μJ (off)

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

115W

-

-

-

-

3

NOT SPECIFIED

NOT SPECIFIED

No SVHC

STGP30H60DF vs STGP10M65DF2

Certification

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IGBT 600V 60A 258W TO220AB
STGP100N30

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IGBT 330V 90A 250W TO220
STGP30H60DF

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IGBT 600V 60A 260W TO220
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STGP30H60DF Specification

Part Number	Manufacturers	Description	Stock	Price
STGP30H60DF DISTI #	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3 Tab) TO-220 RoHS: Compliant	50	9 $3.162 10 $2.142 50 $1.7723
STGP30H60DF DISTI #	STMicroelectronics	IGBT 600V 60A 260W TO220 RoHS: Compliant	0	1 $3.12 50 $2.6802 100 $2.3494 500 $2.02966 1000 $1.743
STGP30H60DFB DISTI #	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, HB RoHS: Compliant	0	1 $3.24 50 $2.646 100 $2.3985 500 $1.9035 1000 $1.6065
STGP30H60DF DISTI #	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3 Tab) TO-220 RoHS: Compliant	50	1 $2.48 10 $1.68 50 $1.39
STGP30H60DF DISTI #	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-220 Tube (A RoHS: Compliant	50	1 $1.8499 10 $1.1689 25 $0.8819 50 $0.8629 100 $0.8489 500 $0.8309 1000 $0.8029
STGP30H60DF DISTI #	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-220 Tube - RoHS: Compliant	0	1000 $1.49 2000 $1.49 4000 $1.39 6000 $1.29 10000 $1.29
STGP30H60DFB DISTI #	STMicroelectronics	IGBTs (Alt: STGP30H60DFB) RoHS: Compliant	0	50 $1.5909 100 $1.3249 200 $1.2229 300 $1.1359 500 $1.0599
STGP30H60DF DISTI #	STMicroelectronics	IGBT, 600V, 60A, TO-220-3, DC Collector Current:6	3	1 $1.7 10 $1.45 100 $1.16 500 $1.07 1000 $0.96 2500 $0.78 5000 $0.754
STGP30H60DF DISTI #	STMicroelectronics	IGBT Transistors 600V 30A High Speed Trench Gate I RoHS: Compliant	0	1 $2.78 10 $2.37 100 $2.05 250 $1.95 500 $1.75 1000 $1.47 2000 $1.4
STGP30H60DFB DISTI #	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB s RoHS: Compliant	2	1 $2.65 10 $2.25 100 $1.8 500 $1.58 1000 $1.31 2000 $1.22
STGP30H60DF DISTI #	STMicroelectronics	STGP30Hxx Series 600 V 30 A Flange Mount Trench Ga RoHS: Compliant	500	5 $2.89 50 $2.52 250 $2.14
STGP30H60DFB DISTI #	STMicroelectronics	RoHS: Compliant	1000
STGP30H60DF DISTI #	STMicroelectronics	600V 60A 260W TO220 RoHS: Compliant	0	10 $1.63 50 $1.43 200 $1.33 500 $1.28
STGP30H60DF DISTI #	STMicroelectronics	INSTOCK	500
STGP30H60DF DISTI #	STMicroelectronics	IGBT, 600V, 60A, TO-220-3 RoHS: Compliant	3	5 $1.94 25 $1.83 100 $1.58 250 $1.51 500 $1.36
STGP30H60DFB DISTI #	STMicroelectronics	IGBT, SINGLE, 600V, 60A, TO-220 RoHS: Compliant	0	1 $2.61 10 $1.87 100 $1.69 250 $1.5 500 $1.31
STGP30H60DF DISTI #	STMicroelectronics	Insulated Gate Bipolar Transistor, 60AI(C),600VV(B RoHS: Compliant	336	35 $5.78 336 $5.25
STGP30H60DF DISTI #	STMicroelectronics	600V,30A,high speed IGBT	10	1 $1.23 100 $1.13 500 $1.04 1000 $0.98
STGP30H60DF DISTI #	STMicroelectronics	IGBT, 600V, 60A, TO-220-3 RoHS: Compliant	3	5 $3.4 25 $2.91 100 $2.2 250 $1.85 500 $1.6 1000 $1.54 5000 $1.48

STGP30H~~(3)~~
STGP30~~(10)~~
STGP3~~(19)~~
STGP~~(56)~~
STG~~(56)~~

STMicroelectronics STGP30H60DF

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