Nexperia USA Inc. PSMN5R5-60YS,115
- Part Number:
- PSMN5R5-60YS,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2484649-PSMN5R5-60YS,115
- Description:
- MOSFET N-CH 60V 100A LFPAK
- ECAD Model:
-
- Datasheet:
- PSMN5R5-60YS,115
Nexperia USA Inc. PSMN5R5-60YS,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN5R5-60YS,115.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-100, SOT-669
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Reach Compliance Codenot_compliant
- Pin Count4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max130W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.2m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds3501pF @ 30V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)100A
- JEDEC-95 CodeMO-235
- Drain-source On Resistance-Max0.055Ohm
- DS Breakdown Voltage-Min60V
- RoHS StatusROHS3 Compliant
PSMN5R5-60YS,115 Overview
The maximum input capacitance of this device is 3501pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
PSMN5R5-60YS,115 Features
a continuous drain current (ID) of 100A
a 60V drain to source voltage (Vdss)
PSMN5R5-60YS,115 Applications
There are a lot of Nexperia USA Inc.
PSMN5R5-60YS,115 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 3501pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
PSMN5R5-60YS,115 Features
a continuous drain current (ID) of 100A
a 60V drain to source voltage (Vdss)
PSMN5R5-60YS,115 Applications
There are a lot of Nexperia USA Inc.
PSMN5R5-60YS,115 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
PSMN5R5-60YS,115 More Descriptions
NEXPERIA - PSMN5R5-60YS,115 - MOSFET Transistor, N Channel, 100 A, 60 V, 0.0036 ohm, 10 V, 3 V
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
PSMN5R5 Series 60 V 8.3 mOhm 56 nC SMT N-Channel Standard Level MOSFET - LFPAK-4
MOSFET, N CH, 60V, 100A, SOT669; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 130W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 100A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Voltage Vgs Max: 20V
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
PSMN5R5 Series 60 V 8.3 mOhm 56 nC SMT N-Channel Standard Level MOSFET - LFPAK-4
MOSFET, N CH, 60V, 100A, SOT669; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 130W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 100A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Voltage Vgs Max: 20V
The three parts on the right have similar specifications to PSMN5R5-60YS,115.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormReach Compliance CodePin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)JEDEC-95 CodeDrain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusSubcategoryDrain Current-Max (Abs) (ID)Source Url Status Check DateJESD-30 CodePower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Max Dual Supply VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningMountAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reference StandardView Compare
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PSMN5R5-60YS,11512 WeeksSurface MountSC-100, SOT-669YES4SILICON-55°C~175°C TJTape & Reel (TR)2009e3Active1 (Unlimited)4Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGnot_compliant41SINGLE WITH BUILT-IN DIODE130W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5.2m Ω @ 15A, 10V4V @ 1mA3501pF @ 30V100A Tc56nC @ 10V60V10V±20V100AMO-2350.055Ohm60VROHS3 Compliant-------------------- -
-Through HoleTO-220-3 Full Pack, Isolated TabNO---55°C~175°C TJTube2012-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--not_compliant3-Single48.4W TcENHANCEMENT MODE-N-Channel-13.9m Ω @ 10A, 10V4V @ 1mA3195pF @ 50V35.2A Tc57.5nC @ 10V100V10V±20V----ROHS3 CompliantFET General Purpose Power35.2A2013-06-14 00:00:00----------------
-
26 WeeksSurface MountSOT-1210, 8-LFPAK33YES8SILICON-55°C~175°C TJTape & Reel (TR)2012e3Active1 (Unlimited)4Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WING-81SINGLE WITH BUILT-IN DIODE91W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.9m Ω @ 25A, 10V2.15V @ 1mA2419pF @ 15V70A Tc36.1nC @ 10V-4.5V 10V±20V70A---ROHS3 Compliant---R-PSSO-G491W17.7 ns30.8ns19.3 ns24.6 ns20V30V523A75 mJNo-----
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12 WeeksSurface MountSC-100, SOT-669--SILICON-55°C~175°C TJTape & Reel (TR)2016-Active1 (Unlimited)4-MOSFET (Metal Oxide)SINGLEGULL WING-41SINGLE WITH BUILT-IN DIODE147W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V80V5V 10V±20V62AMO-2350.015Ohm80VROHS3 Compliant---R-PSSO-G4-------250A79.6 mJ-Surface MountAVALANCHE RATEDNOT SPECIFIEDNOT SPECIFIEDIEC-60134
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