Nexperia USA Inc. PSMN2R9-30MLC,115

PSMN2R9-30MLC,115 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 75 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2419pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 70A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 24.6 ns.Peak drain current is 523A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17.7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 30V, it supports dual voltages up to the maximum.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

PSMN2R9-30MLC,115 Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 70A
the turn-off delay time is 24.6 ns
based on its rated peak drain current 523A.


PSMN2R9-30MLC,115 Applications
There are a lot of Nexperia USA Inc.
PSMN2R9-30MLC,115 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies