NXP USA Inc. PSMN020-150W,127
- Part Number:
- PSMN020-150W,127
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3071113-PSMN020-150W,127
- Description:
- MOSFET N-CH 150V 73A SOT429
- Datasheet:
- PSMN020-150W
NXP USA Inc. PSMN020-150W,127 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PSMN020-150W,127.
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesTrenchMOS™
- Published1999
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs20m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds9537pF @ 25V
- Current - Continuous Drain (Id) @ 25°C73A Tc
- Gate Charge (Qg) (Max) @ Vgs227nC @ 10V
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)73A
- Drain-source On Resistance-Max0.02Ohm
- Pulsed Drain Current-Max (IDM)290A
- DS Breakdown Voltage-Min150V
- Avalanche Energy Rating (Eas)707 mJ
- RoHS StatusROHS3 Compliant
PSMN020-150W,127 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 707 mJ.The maximum input capacitance of this device is 9537pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 73A.There is no pulsed drain current maximum for this device based on its rated peak drain current 290A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 150V.The drain-to-source voltage (Vdss) of this transistor needs to be at 150V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
PSMN020-150W,127 Features
the avalanche energy rating (Eas) is 707 mJ
based on its rated peak drain current 290A.
a 150V drain to source voltage (Vdss)
PSMN020-150W,127 Applications
There are a lot of NXP USA Inc.
PSMN020-150W,127 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 707 mJ.The maximum input capacitance of this device is 9537pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 73A.There is no pulsed drain current maximum for this device based on its rated peak drain current 290A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 150V.The drain-to-source voltage (Vdss) of this transistor needs to be at 150V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
PSMN020-150W,127 Features
the avalanche energy rating (Eas) is 707 mJ
based on its rated peak drain current 290A.
a 150V drain to source voltage (Vdss)
PSMN020-150W,127 Applications
There are a lot of NXP USA Inc.
PSMN020-150W,127 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
PSMN020-150W,127 More Descriptions
PSMN020-150W - N-channel TrenchMOS SiliconMAX standard level FET
TRANSISTOR 100V >< 300V N CHANNEL TRENCHFET
IC MTR DRIVER 4.75V-5.25V 32LQFP
TRANSISTOR 100V >< 300V N CHANNEL TRENCHFET
IC MTR DRIVER 4.75V-5.25V 32LQFP
The three parts on the right have similar specifications to PSMN020-150W,127.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageFactory Lead TimeHTS CodeTerminal FormMountAdditional FeatureReference StandardContinuous Drain Current (ID)JEDEC-95 CodeView Compare
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PSMN020-150W,127Through HoleTO-247-3NOSILICON-55°C~175°C TJTubeTrenchMOS™1999e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING20m Ω @ 25A, 10V4V @ 1mA9537pF @ 25V73A Tc227nC @ 10V150V10V±20V73A0.02Ohm290A150V707 mJROHS3 Compliant----------
-
Surface MountSC-100, SOT-669---55°C~175°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---------164W Tc--N-Channel-1.9mOhm @ 25A, 10V1.95V @ 1mA3.735pF @ 12V100A Tc59nC @ 10V25V4.5V 10V±20V-----ROHS3 CompliantLFPAK56, Power-SO8--------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)TrenchMOS™2001e3Active1 (Unlimited)2EAR99Tin (Sn)-MOSFET (Metal Oxide)SINGLENOT SPECIFIEDnot_compliantNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE230W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5m Ω @ 25A, 10V4V @ 1mA8250pF @ 25V75A Tc165nC @ 10V75V10V±20V75A0.005Ohm400A75V500 mJROHS3 Compliant-12 Weeks8541.29.00.75GULL WING-----
-
Surface MountSC-100, SOT-669-SILICON-55°C~175°C TJTape & Reel (TR)-2016-Active1 (Unlimited)4---MOSFET (Metal Oxide)SINGLENOT SPECIFIED-NOT SPECIFIED4R-PSSO-G4-1SINGLE WITH BUILT-IN DIODE147W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V80V5V 10V±20V-0.015Ohm250A80V79.6 mJROHS3 Compliant-12 Weeks-GULL WINGSurface MountAVALANCHE RATEDIEC-6013462AMO-235
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