Nexperia USA Inc. PSMN014-80YLX
- Part Number:
- PSMN014-80YLX
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3554250-PSMN014-80YLX
- Description:
- MOSFET N-CH 80V LFPAK56
- Datasheet:
- PSMN014-80YLX
Nexperia USA Inc. PSMN014-80YLX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN014-80YLX.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-100, SOT-669
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- Reference StandardIEC-60134
- JESD-30 CodeR-PSSO-G4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max147W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs14m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.1V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds4640pF @ 25V
- Current - Continuous Drain (Id) @ 25°C62A Tc
- Gate Charge (Qg) (Max) @ Vgs28.9nC @ 5V
- Drain to Source Voltage (Vdss)80V
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)62A
- JEDEC-95 CodeMO-235
- Drain-source On Resistance-Max0.015Ohm
- Pulsed Drain Current-Max (IDM)250A
- DS Breakdown Voltage-Min80V
- Avalanche Energy Rating (Eas)79.6 mJ
- RoHS StatusROHS3 Compliant
PSMN014-80YLX Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 79.6 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4640pF @ 25V.This device conducts a continuous drain current (ID) of 62A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 250A.A normal operation of the DS requires keeping the breakdown voltage above 80V.This transistor requires a drain-source voltage (Vdss) of 80V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
PSMN014-80YLX Features
the avalanche energy rating (Eas) is 79.6 mJ
a continuous drain current (ID) of 62A
based on its rated peak drain current 250A.
a 80V drain to source voltage (Vdss)
PSMN014-80YLX Applications
There are a lot of Nexperia USA Inc.
PSMN014-80YLX applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 79.6 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4640pF @ 25V.This device conducts a continuous drain current (ID) of 62A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 250A.A normal operation of the DS requires keeping the breakdown voltage above 80V.This transistor requires a drain-source voltage (Vdss) of 80V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
PSMN014-80YLX Features
the avalanche energy rating (Eas) is 79.6 mJ
a continuous drain current (ID) of 62A
based on its rated peak drain current 250A.
a 80V drain to source voltage (Vdss)
PSMN014-80YLX Applications
There are a lot of Nexperia USA Inc.
PSMN014-80YLX applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PSMN014-80YLX More Descriptions
MOSFET, N-CH, 80V, 62A, SOT-669-4, Transistor PolarityN Channel, Continuous Drai
PSMN014-80YL - N-channel 80 V, 14 mΩ logic level MOSFET in LFPAK56
MOSFET, N-CH, 80V, 62A, SOT-669-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 62A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0113ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 147W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Power Field-Effect Transistor, 62A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
PSMN014-80YL - N-channel 80 V, 14 mΩ logic level MOSFET in LFPAK56
MOSFET, N-CH, 80V, 62A, SOT-669-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 62A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0113ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 147W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Power Field-Effect Transistor, 62A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
The three parts on the right have similar specifications to PSMN014-80YLX.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountReference StandardJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)JEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSurface MountNumber of PinsJESD-609 CodeTerminal FinishPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Max Dual Supply VoltageRadiation HardeningSeriesECCN CodeHTS CodeReach Compliance CodeQualification StatusDrain Current-Max (Abs) (ID)SubcategoryView Compare
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PSMN014-80YLX12 WeeksSurface MountSurface MountSC-100, SOT-669SILICON-55°C~175°C TJTape & Reel (TR)2016Active1 (Unlimited)4AVALANCHE RATEDMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED4IEC-60134R-PSSO-G41SINGLE WITH BUILT-IN DIODE147W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V80V5V 10V±20V62AMO-2350.015Ohm250A80V79.6 mJROHS3 Compliant--------------------
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26 Weeks-Surface MountSOT-1210, 8-LFPAK33SILICON-55°C~175°C TJTape & Reel (TR)2012Active1 (Unlimited)4-MOSFET (Metal Oxide)SINGLEGULL WING--8-R-PSSO-G41SINGLE WITH BUILT-IN DIODE91W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.9m Ω @ 25A, 10V2.15V @ 1mA2419pF @ 15V70A Tc36.1nC @ 10V-4.5V 10V±20V70A--523A-75 mJROHS3 CompliantYES8e3Tin (Sn)91W17.7 ns30.8ns19.3 ns24.6 ns20V30VNo-------
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12 Weeks-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON-55°C~175°C TJTape & Reel (TR)2001Active1 (Unlimited)2-MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED3-R-PSSO-G21SINGLE WITH BUILT-IN DIODE230W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5m Ω @ 25A, 10V4V @ 1mA8250pF @ 25V75A Tc165nC @ 10V75V10V±20V--0.005Ohm400A75V500 mJROHS3 CompliantYES-e3Tin (Sn)--------TrenchMOS™EAR998541.29.00.75not_compliantNot Qualified75A-
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--Through HoleTO-247-3SILICON-55°C~175°C TJTube1999Obsolete1 (Unlimited)3-MOSFET (Metal Oxide)SINGLE-NOT SPECIFIEDNOT SPECIFIED3-R-PSFM-T31SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING20m Ω @ 25A, 10V4V @ 1mA9537pF @ 25V73A Tc227nC @ 10V150V10V±20V--0.02Ohm290A150V707 mJROHS3 CompliantNO-e3Matte Tin (Sn)--------TrenchMOS™EAR99-unknownNot Qualified73AFET General Purpose Power
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