PSMN014-80YLX

Nexperia USA Inc. PSMN014-80YLX

Part Number:
PSMN014-80YLX
Manufacturer:
Nexperia USA Inc.
Ventron No:
3554250-PSMN014-80YLX
Description:
MOSFET N-CH 80V LFPAK56
ECAD Model:
Datasheet:
PSMN014-80YLX

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Specifications
Nexperia USA Inc. PSMN014-80YLX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN014-80YLX.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-100, SOT-669
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2016
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • Reference Standard
    IEC-60134
  • JESD-30 Code
    R-PSSO-G4
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    147W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    4640pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    62A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    28.9nC @ 5V
  • Drain to Source Voltage (Vdss)
    80V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    62A
  • JEDEC-95 Code
    MO-235
  • Drain-source On Resistance-Max
    0.015Ohm
  • Pulsed Drain Current-Max (IDM)
    250A
  • DS Breakdown Voltage-Min
    80V
  • Avalanche Energy Rating (Eas)
    79.6 mJ
  • RoHS Status
    ROHS3 Compliant
Description
PSMN014-80YLX Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 79.6 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4640pF @ 25V.This device conducts a continuous drain current (ID) of 62A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 250A.A normal operation of the DS requires keeping the breakdown voltage above 80V.This transistor requires a drain-source voltage (Vdss) of 80V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

PSMN014-80YLX Features
the avalanche energy rating (Eas) is 79.6 mJ
a continuous drain current (ID) of 62A
based on its rated peak drain current 250A.
a 80V drain to source voltage (Vdss)


PSMN014-80YLX Applications
There are a lot of Nexperia USA Inc.
PSMN014-80YLX applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PSMN014-80YLX More Descriptions
MOSFET, N-CH, 80V, 62A, SOT-669-4, Transistor PolarityN Channel, Continuous Drai
PSMN014-80YL - N-channel 80 V, 14 mΩ logic level MOSFET in LFPAK56
MOSFET, N-CH, 80V, 62A, SOT-669-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 62A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0113ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 147W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Power Field-Effect Transistor, 62A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
Product Comparison
The three parts on the right have similar specifications to PSMN014-80YLX.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Surface Mount
    Number of Pins
    JESD-609 Code
    Terminal Finish
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Radiation Hardening
    Series
    ECCN Code
    HTS Code
    Reach Compliance Code
    Qualification Status
    Drain Current-Max (Abs) (ID)
    Subcategory
    View Compare
  • PSMN014-80YLX
    PSMN014-80YLX
    12 Weeks
    Surface Mount
    Surface Mount
    SC-100, SOT-669
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    4
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    4
    IEC-60134
    R-PSSO-G4
    1
    SINGLE WITH BUILT-IN DIODE
    147W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    14m Ω @ 15A, 10V
    2.1V @ 1mA
    4640pF @ 25V
    62A Tc
    28.9nC @ 5V
    80V
    5V 10V
    ±20V
    62A
    MO-235
    0.015Ohm
    250A
    80V
    79.6 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN2R9-30MLC,115
    26 Weeks
    -
    Surface Mount
    SOT-1210, 8-LFPAK33
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2012
    Active
    1 (Unlimited)
    4
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    -
    -
    8
    -
    R-PSSO-G4
    1
    SINGLE WITH BUILT-IN DIODE
    91W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    2.9m Ω @ 25A, 10V
    2.15V @ 1mA
    2419pF @ 15V
    70A Tc
    36.1nC @ 10V
    -
    4.5V 10V
    ±20V
    70A
    -
    -
    523A
    -
    75 mJ
    ROHS3 Compliant
    YES
    8
    e3
    Tin (Sn)
    91W
    17.7 ns
    30.8ns
    19.3 ns
    24.6 ns
    20V
    30V
    No
    -
    -
    -
    -
    -
    -
    -
  • PSMN005-75B,118
    12 Weeks
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2001
    Active
    1 (Unlimited)
    2
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    230W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    5m Ω @ 25A, 10V
    4V @ 1mA
    8250pF @ 25V
    75A Tc
    165nC @ 10V
    75V
    10V
    ±20V
    -
    -
    0.005Ohm
    400A
    75V
    500 mJ
    ROHS3 Compliant
    YES
    -
    e3
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    TrenchMOS™
    EAR99
    8541.29.00.75
    not_compliant
    Not Qualified
    75A
    -
  • PSMN020-150W,127
    -
    -
    Through Hole
    TO-247-3
    SILICON
    -55°C~175°C TJ
    Tube
    1999
    Obsolete
    1 (Unlimited)
    3
    -
    MOSFET (Metal Oxide)
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    300W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    20m Ω @ 25A, 10V
    4V @ 1mA
    9537pF @ 25V
    73A Tc
    227nC @ 10V
    150V
    10V
    ±20V
    -
    -
    0.02Ohm
    290A
    150V
    707 mJ
    ROHS3 Compliant
    NO
    -
    e3
    Matte Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    TrenchMOS™
    EAR99
    -
    unknown
    Not Qualified
    73A
    FET General Purpose Power
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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