PSMN2R2-25YLC,115

Nexperia USA Inc. PSMN2R2-25YLC,115

Part Number:
PSMN2R2-25YLC,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
3554161-PSMN2R2-25YLC,115
Description:
MOSFET N-CH 25V 100A LFPAK
ECAD Model:
Datasheet:
PSMN2R2-25YLC,115

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Specifications
Nexperia USA Inc. PSMN2R2-25YLC,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN2R2-25YLC,115.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-100, SOT-669
  • Surface Mount
    YES
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Resistance
    3.15MOhm
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Pin Count
    4
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    106W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    106W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    24 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.4m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    1.95V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2542pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
  • Rise Time
    34ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    100A
  • JEDEC-95 Code
    MO-235
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    25V
  • Drain to Source Breakdown Voltage
    25V
  • Pulsed Drain Current-Max (IDM)
    636A
  • Avalanche Energy Rating (Eas)
    60 mJ
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PSMN2R2-25YLC,115 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 60 mJ.A device's maximal input capacitance is 2542pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 25V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 36 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 636A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 25V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

PSMN2R2-25YLC,115 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 636A.


PSMN2R2-25YLC,115 Applications
There are a lot of Nexperia USA Inc.
PSMN2R2-25YLC,115 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
PSMN2R2-25YLC,115 More Descriptions
PSMN2R2-25YLC - N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology
PSMN2R2 Series 25 V 3.15 mOhm 18 nC N-Channel Logic Level MOSFET - LFPAK-56
Trans MOSFET N-CH 25V 100A 5-Pin(4 Tab) LFPAK T/R
Mosfet Rohs Compliant: Yes |Nexperia PSMN2R2-25YLC,115
STANDARD MARKING * REEL PACK, SMD, 7""
Product Comparison
The three parts on the right have similar specifications to PSMN2R2-25YLC,115.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Resistance
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Mount
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    FET Feature
    Drain to Source Resistance
    Rds On Max
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    JESD-30 Code
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • PSMN2R2-25YLC,115
    PSMN2R2-25YLC,115
    12 Weeks
    Surface Mount
    SC-100, SOT-669
    YES
    4
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2011
    e3
    Active
    1 (Unlimited)
    4
    3.15MOhm
    Tin (Sn)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    4
    1
    SINGLE WITH BUILT-IN DIODE
    106W Tc
    ENHANCEMENT MODE
    106W
    DRAIN
    24 ns
    N-Channel
    SWITCHING
    2.4m Ω @ 25A, 10V
    1.95V @ 1mA
    2542pF @ 12V
    100A Tc
    39nC @ 10V
    34ns
    4.5V 10V
    ±20V
    16 ns
    36 ns
    100A
    MO-235
    20V
    25V
    25V
    636A
    60 mJ
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN1R7-25YLC,115
    -
    Surface Mount
    SC-100, SOT-669
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    164W Tc
    -
    -
    -
    -
    N-Channel
    -
    1.9mOhm @ 25A, 10V
    1.95V @ 1mA
    3.735pF @ 12V
    100A Tc
    59nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    LFPAK56, Power-SO8
    25V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN2R0-25YLDX
    12 Weeks
    Surface Mount
    SC-100, SOT-669
    -
    5
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    115W Tc
    -
    -
    -
    -
    N-Channel
    -
    2.09mOhm @ 25A, 10V
    2.2V @ 1mA
    2485pF @ 12V
    100A Tc
    34.1nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    100A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    LFPAK56, Power-SO8
    25V
    Surface Mount
    175°C
    -55°C
    2.485nF
    Schottky Diode (Body)
    1.82mOhm
    2.09 mΩ
    -
    -
    -
    -
    -
    -
  • PSMN014-80YLX
    12 Weeks
    Surface Mount
    SC-100, SOT-669
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2016
    -
    Active
    1 (Unlimited)
    4
    -
    -
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    4
    1
    SINGLE WITH BUILT-IN DIODE
    147W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    14m Ω @ 15A, 10V
    2.1V @ 1mA
    4640pF @ 25V
    62A Tc
    28.9nC @ 5V
    -
    5V 10V
    ±20V
    -
    -
    62A
    MO-235
    -
    -
    -
    250A
    79.6 mJ
    -
    ROHS3 Compliant
    -
    -
    80V
    Surface Mount
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    IEC-60134
    R-PSSO-G4
    0.015Ohm
    80V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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