Nexperia USA Inc. PSMN2R2-25YLC,115
- Part Number:
- PSMN2R2-25YLC,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3554161-PSMN2R2-25YLC,115
- Description:
- MOSFET N-CH 25V 100A LFPAK
- Datasheet:
- PSMN2R2-25YLC,115
Nexperia USA Inc. PSMN2R2-25YLC,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN2R2-25YLC,115.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-100, SOT-669
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Resistance3.15MOhm
- Terminal FinishTin (Sn)
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Pin Count4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max106W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation106W
- Case ConnectionDRAIN
- Turn On Delay Time24 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.4m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id1.95V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2542pF @ 12V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
- Rise Time34ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)100A
- JEDEC-95 CodeMO-235
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage25V
- Drain to Source Breakdown Voltage25V
- Pulsed Drain Current-Max (IDM)636A
- Avalanche Energy Rating (Eas)60 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PSMN2R2-25YLC,115 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 60 mJ.A device's maximal input capacitance is 2542pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 25V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 36 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 636A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 25V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
PSMN2R2-25YLC,115 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 636A.
PSMN2R2-25YLC,115 Applications
There are a lot of Nexperia USA Inc.
PSMN2R2-25YLC,115 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 60 mJ.A device's maximal input capacitance is 2542pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 25V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 36 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 636A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 25V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
PSMN2R2-25YLC,115 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 636A.
PSMN2R2-25YLC,115 Applications
There are a lot of Nexperia USA Inc.
PSMN2R2-25YLC,115 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
PSMN2R2-25YLC,115 More Descriptions
PSMN2R2-25YLC - N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology
PSMN2R2 Series 25 V 3.15 mOhm 18 nC N-Channel Logic Level MOSFET - LFPAK-56
Trans MOSFET N-CH 25V 100A 5-Pin(4 Tab) LFPAK T/R
Mosfet Rohs Compliant: Yes |Nexperia PSMN2R2-25YLC,115
STANDARD MARKING * REEL PACK, SMD, 7""
PSMN2R2 Series 25 V 3.15 mOhm 18 nC N-Channel Logic Level MOSFET - LFPAK-56
Trans MOSFET N-CH 25V 100A 5-Pin(4 Tab) LFPAK T/R
Mosfet Rohs Compliant: Yes |Nexperia PSMN2R2-25YLC,115
STANDARD MARKING * REEL PACK, SMD, 7""
The three parts on the right have similar specifications to PSMN2R2-25YLC,115.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)MountMax Operating TemperatureMin Operating TemperatureInput CapacitanceFET FeatureDrain to Source ResistanceRds On MaxPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeDrain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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PSMN2R2-25YLC,11512 WeeksSurface MountSC-100, SOT-669YES4SILICON-55°C~175°C TJTape & Reel (TR)2011e3Active1 (Unlimited)43.15MOhmTin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)SINGLEGULL WING41SINGLE WITH BUILT-IN DIODE106W TcENHANCEMENT MODE106WDRAIN24 nsN-ChannelSWITCHING2.4m Ω @ 25A, 10V1.95V @ 1mA2542pF @ 12V100A Tc39nC @ 10V34ns4.5V 10V±20V16 ns36 ns100AMO-23520V25V25V636A60 mJNoROHS3 CompliantLead Free----------------
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-Surface MountSC-100, SOT-669----55°C~175°C TJTape & Reel (TR)--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----164W Tc----N-Channel-1.9mOhm @ 25A, 10V1.95V @ 1mA3.735pF @ 12V100A Tc59nC @ 10V-4.5V 10V±20V----------ROHS3 Compliant-LFPAK56, Power-SO825V-------------
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12 WeeksSurface MountSC-100, SOT-669-5--55°C~175°C TJTape & Reel (TR)2016-Active1 (Unlimited)----MOSFET (Metal Oxide)-----115W Tc----N-Channel-2.09mOhm @ 25A, 10V2.2V @ 1mA2485pF @ 12V100A Tc34.1nC @ 10V-4.5V 10V±20V--100A-------ROHS3 Compliant-LFPAK56, Power-SO825VSurface Mount175°C-55°C2.485nFSchottky Diode (Body)1.82mOhm2.09 mΩ------
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12 WeeksSurface MountSC-100, SOT-669--SILICON-55°C~175°C TJTape & Reel (TR)2016-Active1 (Unlimited)4--AVALANCHE RATEDMOSFET (Metal Oxide)SINGLEGULL WING41SINGLE WITH BUILT-IN DIODE147W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V-5V 10V±20V--62AMO-235---250A79.6 mJ-ROHS3 Compliant--80VSurface Mount------NOT SPECIFIEDNOT SPECIFIEDIEC-60134R-PSSO-G40.015Ohm80V
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