NXP USA Inc. PSMN004-60P,127
- Part Number:
- PSMN004-60P,127
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3586614-PSMN004-60P,127
- Description:
- MOSFET N-CH 60V 75A TO220AB
- ECAD Model:
-
- Datasheet:
- PSMN004-60P,127
NXP USA Inc. PSMN004-60P,127 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PSMN004-60P,127.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesTrenchMOS™
- Published2001
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.6m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds8300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs168nC @ 10V
- Drain to Source Voltage (Vdss)60V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)75A
- Drain-source On Resistance-Max0.0036Ohm
- Pulsed Drain Current-Max (IDM)400A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)500 mJ
- Power Dissipation-Max (Abs)230W
- RoHS StatusROHS3 Compliant
PSMN004-60P,127 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The maximum input capacitance of this device is 8300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 75A.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.
PSMN004-60P,127 Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 400A.
a 60V drain to source voltage (Vdss)
PSMN004-60P,127 Applications
There are a lot of NXP USA Inc.
PSMN004-60P,127 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The maximum input capacitance of this device is 8300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 75A.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.
PSMN004-60P,127 Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 400A.
a 60V drain to source voltage (Vdss)
PSMN004-60P,127 Applications
There are a lot of NXP USA Inc.
PSMN004-60P,127 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
PSMN004-60P,127 More Descriptions
MOSFET N-CH 60V 75A TO220AB
The three parts on the right have similar specifications to PSMN004-60P,127.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Power Dissipation-Max (Abs)RoHS StatusFactory Lead TimeHTS CodeTerminal FormReach Compliance CodePower Dissipation-MaxDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)MountReference StandardContinuous Drain Current (ID)Number of PinsResistancePower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltageRadiation HardeningLead FreeView Compare
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PSMN004-60P,127Through HoleTO-220-3NOSILICON-55°C~175°C TJTubeTrenchMOS™2001e3Obsolete1 (Unlimited)3EAR99TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINN-ChannelSWITCHING3.6m Ω @ 25A, 10V4V @ 1mA8300pF @ 25V75A Tc168nC @ 10V60VTO-220AB75A0.0036Ohm400A60V500 mJ230WROHS3 Compliant----------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)TrenchMOS™2001e3Active1 (Unlimited)2EAR99Tin (Sn)--MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINN-ChannelSWITCHING5m Ω @ 25A, 10V4V @ 1mA8250pF @ 25V75A Tc165nC @ 10V75V-75A0.005Ohm400A75V500 mJ-ROHS3 Compliant12 Weeks8541.29.00.75GULL WINGnot_compliant230W Tc10V±20V---------------
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Surface MountSC-100, SOT-669-SILICON-55°C~175°C TJTape & Reel (TR)-2016-Active1 (Unlimited)4--AVALANCHE RATED-MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED4R-PSSO-G4-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINN-ChannelSWITCHING14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V80VMO-235-0.015Ohm250A80V79.6 mJ-ROHS3 Compliant12 Weeks-GULL WING-147W Tc5V 10V±20VSurface MountIEC-6013462A------------
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Surface MountSC-100, SOT-669YESSILICON-55°C~175°C TJTape & Reel (TR)-2011e3Active1 (Unlimited)4-Tin (Sn)HIGH RELIABILITY-MOSFET (Metal Oxide)SINGLE--4--1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINN-ChannelSWITCHING2.4m Ω @ 25A, 10V1.95V @ 1mA2542pF @ 12V100A Tc39nC @ 10V-MO-235--636A-60 mJ-ROHS3 Compliant12 Weeks-GULL WING-106W Tc4.5V 10V±20V--100A43.15MOhm106W24 ns34ns16 ns36 ns20V25V25VNoLead Free
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