Nexperia USA Inc. PSMN005-75B,118
- Part Number:
- PSMN005-75B,118
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3554342-PSMN005-75B,118
- Description:
- MOSFET N-CH 75V 75A D2PAK
- ECAD Model:
-
- Datasheet:
- PSMN005-75B,118
Nexperia USA Inc. PSMN005-75B,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN005-75B,118.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchMOS™
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max230W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds8250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs165nC @ 10V
- Drain to Source Voltage (Vdss)75V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)75A
- Drain-source On Resistance-Max0.005Ohm
- Pulsed Drain Current-Max (IDM)400A
- DS Breakdown Voltage-Min75V
- Avalanche Energy Rating (Eas)500 mJ
- RoHS StatusROHS3 Compliant
PSMN005-75B,118 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8250pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [75A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 75V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
PSMN005-75B,118 Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 400A.
a 75V drain to source voltage (Vdss)
PSMN005-75B,118 Applications
There are a lot of Nexperia USA Inc.
PSMN005-75B,118 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8250pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [75A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 75V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
PSMN005-75B,118 Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 400A.
a 75V drain to source voltage (Vdss)
PSMN005-75B,118 Applications
There are a lot of Nexperia USA Inc.
PSMN005-75B,118 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PSMN005-75B,118 More Descriptions
Trans MOSFET N-CH 75V 75A 3-Pin(2 Tab) D2PAK T/R
Mosfet Rohs Compliant: Yes |Nexperia PSMN005-75B,118
N-channel TrenchMOS SiliconMAX standard level FET
STANDARD MARKING * REEL PACK, SMD, 13'
Mosfet Rohs Compliant: Yes |Nexperia PSMN005-75B,118
N-channel TrenchMOS SiliconMAX standard level FET
STANDARD MARKING * REEL PACK, SMD, 13'
The three parts on the right have similar specifications to PSMN005-75B,118.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusNumber of PinsAdditional FeaturePower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageRadiation HardeningSubcategorySource Url Status Check DateView Compare
-
PSMN005-75B,11812 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)TrenchMOS™2001e3Active1 (Unlimited)2EAR99Tin (Sn)8541.29.00.75MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE230W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5m Ω @ 25A, 10V4V @ 1mA8250pF @ 25V75A Tc165nC @ 10V75V10V±20V75A0.005Ohm400A75V500 mJROHS3 Compliant--------------- -
12 WeeksSurface MountSC-100, SOT-669YESSILICON-55°C~175°C TJTape & Reel (TR)-2012e3Active1 (Unlimited)4EAR99Tin (Sn)-MOSFET (Metal Oxide)SINGLEGULL WING---4--1SINGLE WITH BUILT-IN DIODE272W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING1.8m Ω @ 25A, 10V1.95V @ 1mA6680pF @ 20V100A Tc96nC @ 10V-4.5V 10V±20V-----ROHS3 Compliant4HIGH RELIABILITY, ULTRA-LOW RESISTANCE272W32.2 ns37ns31.7 ns62.5 ns100AMO-23520V40VNo--
-
-Through HoleTO-220-3 Full Pack, Isolated TabNO--55°C~175°C TJTube-2012-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---not_compliant-3---Single48.4W TcENHANCEMENT MODE-N-Channel-13.9m Ω @ 10A, 10V4V @ 1mA3195pF @ 50V35.2A Tc57.5nC @ 10V100V10V±20V35.2A----ROHS3 Compliant------------FET General Purpose Power2013-06-14 00:00:00
-
-Through HoleTO-247-3NOSILICON-55°C~175°C TJTubeTrenchMOS™1999e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)SINGLE-NOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING20m Ω @ 25A, 10V4V @ 1mA9537pF @ 25V73A Tc227nC @ 10V150V10V±20V73A0.02Ohm290A150V707 mJROHS3 Compliant------------FET General Purpose Power-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
28 February 2024
An In-Depth Look at the TXS0108ERGYR: A Solution for Logic Level Conversion
Ⅰ. TXS0108ERGYR overviewⅡ. Specifications of TXS0108ERGYRⅢ. Recommended operating conditions of TXS0108ERGYRⅣ. Advantages of TXS0108ERGYRⅤ. Functional block diagram of TXSO108ERGYRⅥ. Application areas of TXS0108ERGYRⅦ. Wiring and circuit design of... -
28 February 2024
MAX232IDR Characteristics, Specifications, Application Fields and Working Principle
Ⅰ. Description of MAX232IDRⅡ. What are the characteristics of MAX232IDR?Ⅲ. Specifications of MAX232IDRⅣ. Parameter measurement information of MAX232IDRⅤ. Application fields of MAX232IDRⅥ. Application examples of MAX232IDRⅦ. How does... -
29 February 2024
4N35 Optocoupler: Pinout, Package, Application, and 4N25 vs 4N35
Ⅰ. Description of 4N35Ⅱ. 4N35 pinout and functionsⅢ. 4N35 technical parametersⅣ. How to use 4N35 optocoupler?Ⅴ. Application of 4N35 motorⅥ. How to test the 4N35 optocoupler?Ⅶ. 4N35 packageⅧ.... -
29 February 2024
TPS3808G01DBVR: A Powerful Power Monitoring Reset Chip
Ⅰ. What is TPS3808G01DBVR?Ⅱ. Functions of the TPS3808G01DBVRⅢ. TPS3808G01DBVR functional block diagramⅣ. Specifications of TPS3808G01DBVRⅤ. TPS3808G01DBVR shift register application in realityⅥ. Application circuit diagram of TPS3808G01DBVRⅦ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.