NXP USA Inc. PSMN1R7-25YLC,115
- Part Number:
- PSMN1R7-25YLC,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3586551-PSMN1R7-25YLC,115
- Description:
- MOSFET N-CH 25V 100A LFPAK
- ECAD Model:
-
- Datasheet:
- PSMN1R7-25YLC,115
NXP USA Inc. PSMN1R7-25YLC,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PSMN1R7-25YLC,115.
- Mounting TypeSurface Mount
- Package / CaseSC-100, SOT-669
- Supplier Device PackageLFPAK56, Power-SO8
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max164W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id1.95V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds3.735pF @ 12V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
PSMN1R7-25YLC,115 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3.735pF @ 12V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 25V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
PSMN1R7-25YLC,115 Features
a 25V drain to source voltage (Vdss)
PSMN1R7-25YLC,115 Applications
There are a lot of Rochester Electronics, LLC
PSMN1R7-25YLC,115 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3.735pF @ 12V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 25V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
PSMN1R7-25YLC,115 Features
a 25V drain to source voltage (Vdss)
PSMN1R7-25YLC,115 Applications
There are a lot of Rochester Electronics, LLC
PSMN1R7-25YLC,115 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
PSMN1R7-25YLC,115 More Descriptions
PSMN1R7-25YLC - N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology
Trans MOSFET N-CH 25V 100A 5-Pin(4 Tab) LFPAK T/R
Compliant Surface Mount 23 ns Lead Free Digi-Reel® 42 ns 1.9 mΩ 2.5 MΩ
IC MTR DRIVER 4.75V-5.25V 32LQFP
Trans MOSFET N-CH 25V 100A 5-Pin(4 Tab) LFPAK T/R
Compliant Surface Mount 23 ns Lead Free Digi-Reel® 42 ns 1.9 mΩ 2.5 MΩ
IC MTR DRIVER 4.75V-5.25V 32LQFP
The three parts on the right have similar specifications to PSMN1R7-25YLC,115.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusFactory Lead TimeSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageRadiation HardeningMountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)ResistanceDrain to Source Breakdown VoltageLead FreeView Compare
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PSMN1R7-25YLC,115Surface MountSC-100, SOT-669LFPAK56, Power-SO8-55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)164W TcN-Channel1.9mOhm @ 25A, 10V1.95V @ 1mA3.735pF @ 12V100A Tc59nC @ 10V25V4.5V 10V±20VROHS3 Compliant----------------------------------------- -
Surface MountSC-100, SOT-669--55°C~175°C TJTape & Reel (TR)Active1 (Unlimited)MOSFET (Metal Oxide)272W TcN-Channel1.8m Ω @ 25A, 10V1.95V @ 1mA6680pF @ 20V100A Tc96nC @ 10V-4.5V 10V±20VROHS3 Compliant12 WeeksYES4SILICON2012e34EAR99Tin (Sn)HIGH RELIABILITY, ULTRA-LOW RESISTANCESINGLEGULL WING41SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE272WDRAIN32.2 nsSWITCHING37ns31.7 ns62.5 ns100AMO-23520V40VNo------------
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Surface MountSC-100, SOT-669--55°C~175°C TJTape & Reel (TR)Active1 (Unlimited)MOSFET (Metal Oxide)147W TcN-Channel14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V80V5V 10V±20VROHS3 Compliant12 Weeks--SILICON2016-4--AVALANCHE RATEDSINGLEGULL WING41SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE-DRAIN-SWITCHING---62AMO-235---Surface MountNOT SPECIFIEDNOT SPECIFIEDIEC-60134R-PSSO-G40.015Ohm250A80V79.6 mJ---
-
Surface MountSC-100, SOT-669--55°C~175°C TJTape & Reel (TR)Active1 (Unlimited)MOSFET (Metal Oxide)106W TcN-Channel2.4m Ω @ 25A, 10V1.95V @ 1mA2542pF @ 12V100A Tc39nC @ 10V-4.5V 10V±20VROHS3 Compliant12 WeeksYES4SILICON2011e34-Tin (Sn)HIGH RELIABILITYSINGLEGULL WING41SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE106WDRAIN24 nsSWITCHING34ns16 ns36 ns100AMO-23520V25VNo------636A-60 mJ3.15MOhm25VLead Free
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