PSMN013-100XS,127

NXP USA Inc. PSMN013-100XS,127

Part Number:
PSMN013-100XS,127
Manufacturer:
NXP USA Inc.
Ventron No:
3554503-PSMN013-100XS,127
Description:
MOSFET N-CH 100V 35.2A TO220F
ECAD Model:
Datasheet:
PSMN013-100XS

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Comments
Specifications
NXP USA Inc. PSMN013-100XS,127 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PSMN013-100XS,127.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack, Isolated Tab
  • Surface Mount
    NO
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2012
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Reach Compliance Code
    not_compliant
  • Pin Count
    3
  • Configuration
    Single
  • Power Dissipation-Max
    48.4W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    13.9m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    3195pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    35.2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    57.5nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    35.2A
  • Source Url Status Check Date
    2013-06-14 00:00:00
  • RoHS Status
    ROHS3 Compliant
Description
PSMN013-100XS,127 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3195pF @ 50V maximal input capacitance.A device can conduct a maximum continuous current of [35.2A] according to its drain current.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

PSMN013-100XS,127 Features
a 100V drain to source voltage (Vdss)


PSMN013-100XS,127 Applications
There are a lot of NXP USA Inc.
PSMN013-100XS,127 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PSMN013-100XS,127 More Descriptions
Mosfet Transistor, N Channel, 35.2 A, 100 V, 0.0108 Ohm, 10 V, 3 V
PSMN013-100XS - N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
Trans MOSFET N-CH 100V 35.2A 3-Pin(3 Tab) TO-220F Rail
Compliant 21 ns Lead Free 18 ns 13.9 mΩ TO-220-3 3 Obsolete (Last Updated: 1 day ago)
Product Comparison
The three parts on the right have similar specifications to PSMN013-100XS,127.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Subcategory
    Technology
    Reach Compliance Code
    Pin Count
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Source Url Status Check Date
    RoHS Status
    Factory Lead Time
    Number of Pins
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Terminal Position
    Terminal Form
    Number of Elements
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Radiation Hardening
    JESD-30 Code
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Series
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • PSMN013-100XS,127
    PSMN013-100XS,127
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    NO
    -55°C~175°C TJ
    Tube
    2012
    Obsolete
    1 (Unlimited)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    not_compliant
    3
    Single
    48.4W Tc
    ENHANCEMENT MODE
    N-Channel
    13.9m Ω @ 10A, 10V
    4V @ 1mA
    3195pF @ 50V
    35.2A Tc
    57.5nC @ 10V
    100V
    10V
    ±20V
    35.2A
    2013-06-14 00:00:00
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN1R8-40YLC,115
    Surface Mount
    SC-100, SOT-669
    YES
    -55°C~175°C TJ
    Tape & Reel (TR)
    2012
    Active
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    4
    SINGLE WITH BUILT-IN DIODE
    272W Tc
    ENHANCEMENT MODE
    N-Channel
    1.8m Ω @ 25A, 10V
    1.95V @ 1mA
    6680pF @ 20V
    100A Tc
    96nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    ROHS3 Compliant
    12 Weeks
    4
    SILICON
    e3
    4
    EAR99
    Tin (Sn)
    HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    SINGLE
    GULL WING
    1
    272W
    DRAIN
    32.2 ns
    SWITCHING
    37ns
    31.7 ns
    62.5 ns
    100A
    MO-235
    20V
    40V
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN2R9-30MLC,115
    Surface Mount
    SOT-1210, 8-LFPAK33
    YES
    -55°C~175°C TJ
    Tape & Reel (TR)
    2012
    Active
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    8
    SINGLE WITH BUILT-IN DIODE
    91W Tc
    ENHANCEMENT MODE
    N-Channel
    2.9m Ω @ 25A, 10V
    2.15V @ 1mA
    2419pF @ 15V
    70A Tc
    36.1nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    ROHS3 Compliant
    26 Weeks
    8
    SILICON
    e3
    4
    -
    Tin (Sn)
    -
    SINGLE
    GULL WING
    1
    91W
    DRAIN
    17.7 ns
    SWITCHING
    30.8ns
    19.3 ns
    24.6 ns
    70A
    -
    20V
    30V
    No
    R-PSSO-G4
    523A
    75 mJ
    -
    -
    -
    -
    -
    -
  • PSMN020-150W,127
    Through Hole
    TO-247-3
    NO
    -55°C~175°C TJ
    Tube
    1999
    Obsolete
    1 (Unlimited)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    unknown
    3
    SINGLE WITH BUILT-IN DIODE
    300W Tc
    ENHANCEMENT MODE
    N-Channel
    20m Ω @ 25A, 10V
    4V @ 1mA
    9537pF @ 25V
    73A Tc
    227nC @ 10V
    150V
    10V
    ±20V
    73A
    -
    ROHS3 Compliant
    -
    -
    SILICON
    e3
    3
    EAR99
    Matte Tin (Sn)
    -
    SINGLE
    -
    1
    -
    DRAIN
    -
    SWITCHING
    -
    -
    -
    -
    -
    -
    -
    -
    R-PSFM-T3
    290A
    707 mJ
    TrenchMOS™
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    0.02Ohm
    150V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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