NXP USA Inc. PSMN013-100XS,127
- Part Number:
- PSMN013-100XS,127
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3554503-PSMN013-100XS,127
- Description:
- MOSFET N-CH 100V 35.2A TO220F
- Datasheet:
- PSMN013-100XS
NXP USA Inc. PSMN013-100XS,127 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PSMN013-100XS,127.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack, Isolated Tab
- Surface MountNO
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codenot_compliant
- Pin Count3
- ConfigurationSingle
- Power Dissipation-Max48.4W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs13.9m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds3195pF @ 50V
- Current - Continuous Drain (Id) @ 25°C35.2A Tc
- Gate Charge (Qg) (Max) @ Vgs57.5nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)35.2A
- Source Url Status Check Date2013-06-14 00:00:00
- RoHS StatusROHS3 Compliant
PSMN013-100XS,127 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3195pF @ 50V maximal input capacitance.A device can conduct a maximum continuous current of [35.2A] according to its drain current.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
PSMN013-100XS,127 Features
a 100V drain to source voltage (Vdss)
PSMN013-100XS,127 Applications
There are a lot of NXP USA Inc.
PSMN013-100XS,127 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3195pF @ 50V maximal input capacitance.A device can conduct a maximum continuous current of [35.2A] according to its drain current.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
PSMN013-100XS,127 Features
a 100V drain to source voltage (Vdss)
PSMN013-100XS,127 Applications
There are a lot of NXP USA Inc.
PSMN013-100XS,127 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PSMN013-100XS,127 More Descriptions
Mosfet Transistor, N Channel, 35.2 A, 100 V, 0.0108 Ohm, 10 V, 3 V
PSMN013-100XS - N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
Trans MOSFET N-CH 100V 35.2A 3-Pin(3 Tab) TO-220F Rail
Compliant 21 ns Lead Free 18 ns 13.9 mΩ TO-220-3 3 Obsolete (Last Updated: 1 day ago)
PSMN013-100XS - N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
Trans MOSFET N-CH 100V 35.2A 3-Pin(3 Tab) TO-220F Rail
Compliant 21 ns Lead Free 18 ns 13.9 mΩ TO-220-3 3 Obsolete (Last Updated: 1 day ago)
The three parts on the right have similar specifications to PSMN013-100XS,127.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryTechnologyReach Compliance CodePin CountConfigurationPower Dissipation-MaxOperating ModeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Source Url Status Check DateRoHS StatusFactory Lead TimeNumber of PinsTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionTerminal FormNumber of ElementsPower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageRadiation HardeningJESD-30 CodePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)SeriesPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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PSMN013-100XS,127Through HoleTO-220-3 Full Pack, Isolated TabNO-55°C~175°C TJTube2012Obsolete1 (Unlimited)FET General Purpose PowerMOSFET (Metal Oxide)not_compliant3Single48.4W TcENHANCEMENT MODEN-Channel13.9m Ω @ 10A, 10V4V @ 1mA3195pF @ 50V35.2A Tc57.5nC @ 10V100V10V±20V35.2A2013-06-14 00:00:00ROHS3 Compliant---------------------------------
-
Surface MountSC-100, SOT-669YES-55°C~175°C TJTape & Reel (TR)2012Active1 (Unlimited)-MOSFET (Metal Oxide)-4SINGLE WITH BUILT-IN DIODE272W TcENHANCEMENT MODEN-Channel1.8m Ω @ 25A, 10V1.95V @ 1mA6680pF @ 20V100A Tc96nC @ 10V-4.5V 10V±20V--ROHS3 Compliant12 Weeks4SILICONe34EAR99Tin (Sn)HIGH RELIABILITY, ULTRA-LOW RESISTANCESINGLEGULL WING1272WDRAIN32.2 nsSWITCHING37ns31.7 ns62.5 ns100AMO-23520V40VNo---------
-
Surface MountSOT-1210, 8-LFPAK33YES-55°C~175°C TJTape & Reel (TR)2012Active1 (Unlimited)-MOSFET (Metal Oxide)-8SINGLE WITH BUILT-IN DIODE91W TcENHANCEMENT MODEN-Channel2.9m Ω @ 25A, 10V2.15V @ 1mA2419pF @ 15V70A Tc36.1nC @ 10V-4.5V 10V±20V--ROHS3 Compliant26 Weeks8SILICONe34-Tin (Sn)-SINGLEGULL WING191WDRAIN17.7 nsSWITCHING30.8ns19.3 ns24.6 ns70A-20V30VNoR-PSSO-G4523A75 mJ------
-
Through HoleTO-247-3NO-55°C~175°C TJTube1999Obsolete1 (Unlimited)FET General Purpose PowerMOSFET (Metal Oxide)unknown3SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEN-Channel20m Ω @ 25A, 10V4V @ 1mA9537pF @ 25V73A Tc227nC @ 10V150V10V±20V73A-ROHS3 Compliant--SILICONe33EAR99Matte Tin (Sn)-SINGLE-1-DRAIN-SWITCHING--------R-PSFM-T3290A707 mJTrenchMOS™NOT SPECIFIEDNOT SPECIFIEDNot Qualified0.02Ohm150V
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