Nexperia USA Inc. PSMN1R8-40YLC,115
- Part Number:
- PSMN1R8-40YLC,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3585964-PSMN1R8-40YLC,115
- Description:
- MOSFET N-CH 40V 100A LFPAK
- ECAD Model:
-
- Datasheet:
- PSMN1R8-40YLC,115
Nexperia USA Inc. PSMN1R8-40YLC,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN1R8-40YLC,115.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-100, SOT-669
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureHIGH RELIABILITY, ULTRA-LOW RESISTANCE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Pin Count4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max272W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation272W
- Case ConnectionDRAIN
- Turn On Delay Time32.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.8m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id1.95V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds6680pF @ 20V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
- Rise Time37ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)31.7 ns
- Turn-Off Delay Time62.5 ns
- Continuous Drain Current (ID)100A
- JEDEC-95 CodeMO-235
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage40V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
PSMN1R8-40YLC,115 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6680pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.It is [62.5 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 32.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
PSMN1R8-40YLC,115 Features
a continuous drain current (ID) of 100A
the turn-off delay time is 62.5 ns
PSMN1R8-40YLC,115 Applications
There are a lot of Nexperia USA Inc.
PSMN1R8-40YLC,115 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6680pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.It is [62.5 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 32.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
PSMN1R8-40YLC,115 Features
a continuous drain current (ID) of 100A
the turn-off delay time is 62.5 ns
PSMN1R8-40YLC,115 Applications
There are a lot of Nexperia USA Inc.
PSMN1R8-40YLC,115 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PSMN1R8-40YLC,115 More Descriptions
PSMN1R8-40YLC - N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology
NEXPERIA - PSMN1R8-40YLC,115 - MOSFET-Transistor, n-Kanal, 100 A, 40 V, 0.0015 ohm, 10 V, 1.45 V
PSMN1R8 Series 40 V 272 W 96 nC SMT N-Channel Logic Level MOSFET - SOT-669
MOSFET, N-CH, 40V, 100A, LFPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.45V; P
Power Field-Effect Transistor, 100A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
NEXPERIA - PSMN1R8-40YLC,115 - MOSFET-Transistor, n-Kanal, 100 A, 40 V, 0.0015 ohm, 10 V, 1.45 V
PSMN1R8 Series 40 V 272 W 96 nC SMT N-Channel Logic Level MOSFET - SOT-669
MOSFET, N-CH, 40V, 100A, LFPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.45V; P
Power Field-Effect Transistor, 100A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
The three parts on the right have similar specifications to PSMN1R8-40YLC,115.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageRadiation HardeningRoHS StatusSeriesHTS CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)MountReference StandardResistanceDrain to Source Breakdown VoltageLead FreeView Compare
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PSMN1R8-40YLC,11512 WeeksSurface MountSC-100, SOT-669YES4SILICON-55°C~175°C TJTape & Reel (TR)2012e3Active1 (Unlimited)4EAR99Tin (Sn)HIGH RELIABILITY, ULTRA-LOW RESISTANCEMOSFET (Metal Oxide)SINGLEGULL WING41SINGLE WITH BUILT-IN DIODE272W TcENHANCEMENT MODE272WDRAIN32.2 nsN-ChannelSWITCHING1.8m Ω @ 25A, 10V1.95V @ 1mA6680pF @ 20V100A Tc96nC @ 10V37ns4.5V 10V±20V31.7 ns62.5 ns100AMO-23520V40VNoROHS3 Compliant------------------- -
12 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYES-SILICON-55°C~175°C TJTape & Reel (TR)2001e3Active1 (Unlimited)2EAR99Tin (Sn)-MOSFET (Metal Oxide)SINGLEGULL WING31SINGLE WITH BUILT-IN DIODE230W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING5m Ω @ 25A, 10V4V @ 1mA8250pF @ 25V75A Tc165nC @ 10V-10V±20V-------ROHS3 CompliantTrenchMOS™8541.29.00.75NOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified75V75A0.005Ohm400A75V500 mJ-----
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12 WeeksSurface MountSC-100, SOT-669--SILICON-55°C~175°C TJTape & Reel (TR)2016-Active1 (Unlimited)4--AVALANCHE RATEDMOSFET (Metal Oxide)SINGLEGULL WING41SINGLE WITH BUILT-IN DIODE147W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V-5V 10V±20V--62AMO-235---ROHS3 Compliant--NOT SPECIFIED-NOT SPECIFIEDR-PSSO-G4-80V-0.015Ohm250A80V79.6 mJSurface MountIEC-60134---
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12 WeeksSurface MountSC-100, SOT-669YES4SILICON-55°C~175°C TJTape & Reel (TR)2011e3Active1 (Unlimited)4-Tin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)SINGLEGULL WING41SINGLE WITH BUILT-IN DIODE106W TcENHANCEMENT MODE106WDRAIN24 nsN-ChannelSWITCHING2.4m Ω @ 25A, 10V1.95V @ 1mA2542pF @ 12V100A Tc39nC @ 10V34ns4.5V 10V±20V16 ns36 ns100AMO-23520V25VNoROHS3 Compliant----------636A-60 mJ--3.15MOhm25VLead Free
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