Nexperia USA Inc. PSMN2R0-25YLDX
- Part Number:
- PSMN2R0-25YLDX
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3586284-PSMN2R0-25YLDX
- Description:
- PSMN2R0-25YLD/LFPAK/REEL 7 Q1
- ECAD Model:
-
- Datasheet:
- PSMN2R0-25YLDX
Nexperia USA Inc. PSMN2R0-25YLDX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN2R0-25YLDX.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-100, SOT-669
- Number of Pins5
- Supplier Device PackageLFPAK56, Power-SO8
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max115W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.09mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id2.2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2485pF @ 12V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs34.1nC @ 10V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)100A
- Input Capacitance2.485nF
- FET FeatureSchottky Diode (Body)
- Drain to Source Resistance1.82mOhm
- Rds On Max2.09 mΩ
- RoHS StatusROHS3 Compliant
PSMN2R0-25YLDX Overview
A device's maximal input capacitance is 2485pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.82mOhm.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
PSMN2R0-25YLDX Features
a continuous drain current (ID) of 100A
single MOSFETs transistor is 1.82mOhm
a 25V drain to source voltage (Vdss)
PSMN2R0-25YLDX Applications
There are a lot of Nexperia USA Inc.
PSMN2R0-25YLDX applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 2485pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.82mOhm.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
PSMN2R0-25YLDX Features
a continuous drain current (ID) of 100A
single MOSFETs transistor is 1.82mOhm
a 25V drain to source voltage (Vdss)
PSMN2R0-25YLDX Applications
There are a lot of Nexperia USA Inc.
PSMN2R0-25YLDX applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
PSMN2R0-25YLDX More Descriptions
PSMN2R0-25YLD Series, 25V 100A Surface Mount Mosfet LFPAK56, Power-SO8
Trans MOSFET N-CH 25V 100A 5-Pin(4 Tab) LFPAK T/R
Trans MOSFET N-CH 25V 100@10VA 4-Pin LFPAK56 T/R
PSMN2R0-25YLD - N-channel 25 V, 2.09 mΩ, 179 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology
MOSFET, N-CH, 25V, 100A, SOT-669-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.00182ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.68V; Power Dissipation Pd: 115W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Trans MOSFET N-CH 25V 100A 5-Pin(4 Tab) LFPAK T/R
Trans MOSFET N-CH 25V 100@10VA 4-Pin LFPAK56 T/R
PSMN2R0-25YLD - N-channel 25 V, 2.09 mΩ, 179 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology
MOSFET, N-CH, 25V, 100A, SOT-669-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.00182ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.68V; Power Dissipation Pd: 115W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
The three parts on the right have similar specifications to PSMN2R0-25YLDX.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Input CapacitanceFET FeatureDrain to Source ResistanceRds On MaxRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeJEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageRadiation HardeningSeriesHTS CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)ResistanceDrain to Source Breakdown VoltageLead FreeView Compare
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PSMN2R0-25YLDX12 WeeksSurface MountSurface MountSC-100, SOT-6695LFPAK56, Power-SO8-55°C~175°C TJTape & Reel (TR)2016Active1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)115W TcN-Channel2.09mOhm @ 25A, 10V2.2V @ 1mA2485pF @ 12V100A Tc34.1nC @ 10V25V4.5V 10V±20V100A2.485nFSchottky Diode (Body)1.82mOhm2.09 mΩROHS3 Compliant---------------------------------------- -
12 Weeks-Surface MountSC-100, SOT-6694--55°C~175°C TJTape & Reel (TR)2012Active1 (Unlimited)--MOSFET (Metal Oxide)272W TcN-Channel1.8m Ω @ 25A, 10V1.95V @ 1mA6680pF @ 20V100A Tc96nC @ 10V-4.5V 10V±20V100A----ROHS3 CompliantYESSILICONe34EAR99Tin (Sn)HIGH RELIABILITY, ULTRA-LOW RESISTANCESINGLEGULL WING41SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE272WDRAIN32.2 nsSWITCHING37ns31.7 ns62.5 nsMO-23520V40VNo---------------
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12 Weeks-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)2001Active1 (Unlimited)--MOSFET (Metal Oxide)230W TcN-Channel5m Ω @ 25A, 10V4V @ 1mA8250pF @ 25V75A Tc165nC @ 10V75V10V±20V-----ROHS3 CompliantYESSILICONe32EAR99Tin (Sn)-SINGLEGULL WING31SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE-DRAIN-SWITCHING-------TrenchMOS™8541.29.00.75NOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified75A0.005Ohm400A75V500 mJ---
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12 Weeks-Surface MountSC-100, SOT-6694--55°C~175°C TJTape & Reel (TR)2011Active1 (Unlimited)--MOSFET (Metal Oxide)106W TcN-Channel2.4m Ω @ 25A, 10V1.95V @ 1mA2542pF @ 12V100A Tc39nC @ 10V-4.5V 10V±20V100A----ROHS3 CompliantYESSILICONe34-Tin (Sn)HIGH RELIABILITYSINGLEGULL WING41SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE106WDRAIN24 nsSWITCHING34ns16 ns36 nsMO-23520V25VNo---------636A-60 mJ3.15MOhm25VLead Free
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