IXFX180N085

IXYS IXFX180N085

Part Number:
IXFX180N085
Manufacturer:
IXYS
Ventron No:
2851263-IXFX180N085
Description:
MOSFET N-CH 85V 180A PLUS247
ECAD Model:
Datasheet:
IXFX180N085

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Specifications
IXYS IXFX180N085 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX180N085.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    PLUS247™-3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2000
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    560W Tc
  • Element Configuration
    Single
  • Power Dissipation
    560W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    7mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 8mA
  • Input Capacitance (Ciss) (Max) @ Vds
    9100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    180A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    320nC @ 10V
  • Rise Time
    90ns
  • Drain to Source Voltage (Vdss)
    85V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    55 ns
  • Turn-Off Delay Time
    140 ns
  • Continuous Drain Current (ID)
    180A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    85V
  • Input Capacitance
    9.1nF
  • Drain to Source Resistance
    7mOhm
  • Rds On Max
    7 mΩ
  • RoHS Status
    RoHS Compliant
Description
IXFX180N085 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9100pF @ 25V.This device conducts a continuous drain current (ID) of 180A, which is the maximum continuous current transistor can conduct.Using VGS=85V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 85V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 140 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 7mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 85V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFX180N085 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 140 ns
single MOSFETs transistor is 7mOhm
a 85V drain to source voltage (Vdss)


IXFX180N085 Applications
There are a lot of IXYS
IXFX180N085 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFX180N085 More Descriptions
MOSFET N-CH 85V 180A PLUS247
CoC and 2-years warranty / RFQ for pricing
Product Comparison
The three parts on the right have similar specifications to IXFX180N085.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Operating Mode
    Case Connection
    Transistor Application
    Pulsed Drain Current-Max (IDM)
    Factory Lead Time
    ECCN Code
    Resistance
    Voltage - Rated DC
    Current Rating
    Radiation Hardening
    Lead Free
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    View Compare
  • IXFX180N085
    IXFX180N085
    Through Hole
    Through Hole
    TO-247-3
    3
    PLUS247™-3
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    560W Tc
    Single
    560W
    N-Channel
    7mOhm @ 500mA, 10V
    4V @ 8mA
    9100pF @ 25V
    180A Tc
    320nC @ 10V
    90ns
    85V
    10V
    ±20V
    55 ns
    140 ns
    180A
    20V
    85V
    9.1nF
    7mOhm
    7 mΩ
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFX25N90
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2003
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    560W Tc
    Single
    560W
    N-Channel
    330m Ω @ 500mA, 10V
    5V @ 8mA
    10800pF @ 25V
    25A Tc
    240nC @ 10V
    35ns
    -
    10V
    ±20V
    24 ns
    130 ns
    25A
    20V
    900V
    -
    -
    -
    RoHS Compliant
    SILICON
    e1
    yes
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    100A
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFX180N10
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    Obsolete
    -
    -
    -
    MOSFET (Metal Oxide)
    560W Tc
    Single
    560W
    N-Channel
    8m Ω @ 90A, 10V
    4V @ 8mA
    10900pF @ 25V
    180A Tc
    390nC @ 10V
    90ns
    -
    10V
    ±20V
    65 ns
    140 ns
    180A
    20V
    100V
    -
    -
    -
    RoHS Compliant
    SILICON
    e1
    yes
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    -
    -
    3
    -
    1
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    720A
    8 Weeks
    EAR99
    8MOhm
    100V
    180A
    No
    Lead Free
    -
    -
  • IXFX73N30Q
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2004
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    500W Tc
    Single
    500W
    N-Channel
    45m Ω @ 500mA, 10V
    4V @ 4mA
    5400pF @ 25V
    73A Tc
    195nC @ 10V
    36ns
    -
    10V
    ±30V
    12 ns
    82 ns
    73A
    30V
    300V
    -
    -
    -
    ROHS3 Compliant
    SILICON
    e1
    yes
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    292A
    -
    -
    -
    -
    -
    -
    -
    0.045Ohm
    2500 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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