IXYS IXFX180N085
- Part Number:
- IXFX180N085
- Manufacturer:
- IXYS
- Ventron No:
- 2851263-IXFX180N085
- Description:
- MOSFET N-CH 85V 180A PLUS247
- Datasheet:
- IXFX180N085
IXYS IXFX180N085 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX180N085.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackagePLUS247™-3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2000
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max560W Tc
- Element ConfigurationSingle
- Power Dissipation560W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id4V @ 8mA
- Input Capacitance (Ciss) (Max) @ Vds9100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C180A Tc
- Gate Charge (Qg) (Max) @ Vgs320nC @ 10V
- Rise Time90ns
- Drain to Source Voltage (Vdss)85V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)55 ns
- Turn-Off Delay Time140 ns
- Continuous Drain Current (ID)180A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage85V
- Input Capacitance9.1nF
- Drain to Source Resistance7mOhm
- Rds On Max7 mΩ
- RoHS StatusRoHS Compliant
IXFX180N085 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9100pF @ 25V.This device conducts a continuous drain current (ID) of 180A, which is the maximum continuous current transistor can conduct.Using VGS=85V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 85V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 140 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 7mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 85V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFX180N085 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 140 ns
single MOSFETs transistor is 7mOhm
a 85V drain to source voltage (Vdss)
IXFX180N085 Applications
There are a lot of IXYS
IXFX180N085 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9100pF @ 25V.This device conducts a continuous drain current (ID) of 180A, which is the maximum continuous current transistor can conduct.Using VGS=85V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 85V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 140 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 7mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 85V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFX180N085 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 140 ns
single MOSFETs transistor is 7mOhm
a 85V drain to source voltage (Vdss)
IXFX180N085 Applications
There are a lot of IXYS
IXFX180N085 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFX180N085 More Descriptions
MOSFET N-CH 85V 180A PLUS247
CoC and 2-years warranty / RFQ for pricing
CoC and 2-years warranty / RFQ for pricing
The three parts on the right have similar specifications to IXFX180N085.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishAdditional FeatureSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsOperating ModeCase ConnectionTransistor ApplicationPulsed Drain Current-Max (IDM)Factory Lead TimeECCN CodeResistanceVoltage - Rated DCCurrent RatingRadiation HardeningLead FreeDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)View Compare
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IXFX180N085Through HoleThrough HoleTO-247-33PLUS247™-3-55°C~150°C TJTubeHiPerFET™2000Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)560W TcSingle560WN-Channel7mOhm @ 500mA, 10V4V @ 8mA9100pF @ 25V180A Tc320nC @ 10V90ns85V10V±20V55 ns140 ns180A20V85V9.1nF7mOhm7 mΩRoHS Compliant--------------------------
-
Through HoleThrough HoleTO-247-33--55°C~150°C TJTubeHiPerFET™2003Obsolete1 (Unlimited)--MOSFET (Metal Oxide)560W TcSingle560WN-Channel330m Ω @ 500mA, 10V5V @ 8mA10800pF @ 25V25A Tc240nC @ 10V35ns-10V±20V24 ns130 ns25A20V900V---RoHS CompliantSILICONe1yes3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerNOT SPECIFIEDNOT SPECIFIED3Not Qualified1ENHANCEMENT MODEDRAINSWITCHING100A---------
-
Through HoleThrough HoleTO-247-33--55°C~150°C TJTubeHiPerFET™2000Obsolete---MOSFET (Metal Oxide)560W TcSingle560WN-Channel8m Ω @ 90A, 10V4V @ 8mA10900pF @ 25V180A Tc390nC @ 10V90ns-10V±20V65 ns140 ns180A20V100V---RoHS CompliantSILICONe1yes3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose Power--3-1ENHANCEMENT MODEDRAINSWITCHING720A8 WeeksEAR998MOhm100V180ANoLead Free--
-
Through HoleThrough HoleTO-247-33--55°C~150°C TJTubeHiPerFET™2004Active1 (Unlimited)--MOSFET (Metal Oxide)500W TcSingle500WN-Channel45m Ω @ 500mA, 10V4V @ 4mA5400pF @ 25V73A Tc195nC @ 10V36ns-10V±30V12 ns82 ns73A30V300V---ROHS3 CompliantSILICONe1yes3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-NOT SPECIFIEDNOT SPECIFIED3Not Qualified1ENHANCEMENT MODEDRAINSWITCHING292A-------0.045Ohm2500 mJ
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