IXYS IXFX32N90P

IXFX32N90P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10600pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 80A.A normal operation of the DS requires keeping the breakdown voltage above 900V.This transistor requires a drain-source voltage (Vdss) of 900V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFX32N90P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 80A.
a 900V drain to source voltage (Vdss)


IXFX32N90P Applications
There are a lot of IXYS
IXFX32N90P applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching