IXYS IXFX25N90 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX25N90.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2003
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max560W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation560W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs330m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id5V @ 8mA
- Input Capacitance (Ciss) (Max) @ Vds10800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C25A Tc
- Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
- Rise Time35ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)24 ns
- Turn-Off Delay Time130 ns
- Continuous Drain Current (ID)25A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage900V
- Pulsed Drain Current-Max (IDM)100A
- RoHS StatusRoHS Compliant
IXFX25N90 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 25A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 100A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFX25N90 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 100A.
IXFX25N90 Applications
There are a lot of IXYS
IXFX25N90 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 25A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 100A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFX25N90 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 100A.
IXFX25N90 Applications
There are a lot of IXYS
IXFX25N90 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IXFX25N90 More Descriptions
MOSFET N-CH 900V 25A PLUS247
The three parts on the right have similar specifications to IXFX25N90.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)RoHS StatusDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)Factory Lead TimeECCN CodeResistanceLead FreeView Compare
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IXFX25N90Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2003e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1560W TcSingleENHANCEMENT MODE560WDRAINN-ChannelSWITCHING330m Ω @ 500mA, 10V5V @ 8mA10800pF @ 25V25A Tc240nC @ 10V35ns10V±20V24 ns130 ns25A20V900V100ARoHS Compliant-------
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Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2002e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1416W TcSingleENHANCEMENT MODE416WDRAINN-ChannelSWITCHING160m Ω @ 15A, 10V4.5V @ 4mA3950pF @ 25V30A Tc150nC @ 10V42ns10V±20V20 ns75 ns30A20V500V120ARoHS Compliant0.16Ohm1500 mJ----
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Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2003e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1500W TcSingleENHANCEMENT MODE500WDRAINN-ChannelSWITCHING120m Ω @ 22A, 10V4V @ 4mA7000pF @ 25V44A Tc190nC @ 10V22ns10V±20V10 ns75 ns44A20V500V176AROHS3 Compliant0.12Ohm2500 mJ----
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Through HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTubePolarHT™ HiPerFET™2006e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1700W TcSingleENHANCEMENT MODE700WDRAINN-ChannelSWITCHING24m Ω @ 60A, 10V5V @ 4mA8000pF @ 25V120A Tc185nC @ 10V33ns10V±20V33 ns130 ns120A20V250V-ROHS3 Compliant-2500 mJ30 WeeksEAR9924MOhmLead Free
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