IXFX25N90

IXYS IXFX25N90

Part Number:
IXFX25N90
Manufacturer:
IXYS
Ventron No:
2851259-IXFX25N90
Description:
MOSFET N-CH 900V 25A PLUS247
ECAD Model:
Datasheet:
IXFX25N90

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Specifications
IXYS IXFX25N90 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX25N90.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2003
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    560W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    560W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    330m Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    5V @ 8mA
  • Input Capacitance (Ciss) (Max) @ Vds
    10800pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    25A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    240nC @ 10V
  • Rise Time
    35ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    24 ns
  • Turn-Off Delay Time
    130 ns
  • Continuous Drain Current (ID)
    25A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    900V
  • Pulsed Drain Current-Max (IDM)
    100A
  • RoHS Status
    RoHS Compliant
Description
IXFX25N90 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 25A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 100A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFX25N90 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 100A.


IXFX25N90 Applications
There are a lot of IXYS
IXFX25N90 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IXFX25N90 More Descriptions
MOSFET N-CH 900V 25A PLUS247
Product Comparison
The three parts on the right have similar specifications to IXFX25N90.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    RoHS Status
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    ECCN Code
    Resistance
    Lead Free
    View Compare
  • IXFX25N90
    IXFX25N90
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2003
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    560W Tc
    Single
    ENHANCEMENT MODE
    560W
    DRAIN
    N-Channel
    SWITCHING
    330m Ω @ 500mA, 10V
    5V @ 8mA
    10800pF @ 25V
    25A Tc
    240nC @ 10V
    35ns
    10V
    ±20V
    24 ns
    130 ns
    25A
    20V
    900V
    100A
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
  • IXFX30N50Q
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2002
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    416W Tc
    Single
    ENHANCEMENT MODE
    416W
    DRAIN
    N-Channel
    SWITCHING
    160m Ω @ 15A, 10V
    4.5V @ 4mA
    3950pF @ 25V
    30A Tc
    150nC @ 10V
    42ns
    10V
    ±20V
    20 ns
    75 ns
    30A
    20V
    500V
    120A
    RoHS Compliant
    0.16Ohm
    1500 mJ
    -
    -
    -
    -
  • IXFX44N50Q
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2003
    e1
    yes
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    500W Tc
    Single
    ENHANCEMENT MODE
    500W
    DRAIN
    N-Channel
    SWITCHING
    120m Ω @ 22A, 10V
    4V @ 4mA
    7000pF @ 25V
    44A Tc
    190nC @ 10V
    22ns
    10V
    ±20V
    10 ns
    75 ns
    44A
    20V
    500V
    176A
    ROHS3 Compliant
    0.12Ohm
    2500 mJ
    -
    -
    -
    -
  • IXFX120N25P
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    PolarHT™ HiPerFET™
    2006
    e1
    yes
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    700W Tc
    Single
    ENHANCEMENT MODE
    700W
    DRAIN
    N-Channel
    SWITCHING
    24m Ω @ 60A, 10V
    5V @ 4mA
    8000pF @ 25V
    120A Tc
    185nC @ 10V
    33ns
    10V
    ±20V
    33 ns
    130 ns
    120A
    20V
    250V
    -
    ROHS3 Compliant
    -
    2500 mJ
    30 Weeks
    EAR99
    24MOhm
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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