IXFX180N10

IXYS IXFX180N10

Part Number:
IXFX180N10
Manufacturer:
IXYS
Ventron No:
2851196-IXFX180N10
Description:
MOSFET N-CH 100V 180A PLUS247
ECAD Model:
Datasheet:
IXFX180N10

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Specifications
IXYS IXFX180N10 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX180N10.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2000
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    8MOhm
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    180A
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    560W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    560W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 90A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 8mA
  • Input Capacitance (Ciss) (Max) @ Vds
    10900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    180A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    390nC @ 10V
  • Rise Time
    90ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    65 ns
  • Turn-Off Delay Time
    140 ns
  • Continuous Drain Current (ID)
    180A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    720A
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IXFX180N10 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10900pF @ 25V.This device conducts a continuous drain current (ID) of 180A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 140 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 720A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFX180N10 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.


IXFX180N10 Applications
There are a lot of IXYS
IXFX180N10 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFX180N10 More Descriptions
Trans MOSFET N-CH 100V 180A 3-Pin(3 Tab) PLUS 247
MOSFET N-CH 100V 180A PLUS247
OEMs, CMs ONLY (NO BROKERS)
THERMOSTAT 72DEG C NC 2-SMD SLDR
new, original packaged
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXFX180N10.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    RoHS Status
    Lead Free
    Moisture Sensitivity Level (MSL)
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Terminal Position
    JESD-30 Code
    Output Voltage
    Configuration
    Nominal Supply Current
    Output Current
    Turn On Delay Time
    Number of Drivers
    View Compare
  • IXFX180N10
    IXFX180N10
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    e1
    yes
    Obsolete
    3
    EAR99
    8MOhm
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    180A
    3
    1
    560W Tc
    Single
    ENHANCEMENT MODE
    560W
    DRAIN
    N-Channel
    SWITCHING
    8m Ω @ 90A, 10V
    4V @ 8mA
    10900pF @ 25V
    180A Tc
    390nC @ 10V
    90ns
    10V
    ±20V
    65 ns
    140 ns
    180A
    20V
    100V
    720A
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFX44N50Q
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2003
    e1
    yes
    Active
    3
    -
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    -
    MOSFET (Metal Oxide)
    -
    3
    1
    500W Tc
    Single
    ENHANCEMENT MODE
    500W
    DRAIN
    N-Channel
    SWITCHING
    120m Ω @ 22A, 10V
    4V @ 4mA
    7000pF @ 25V
    44A Tc
    190nC @ 10V
    22ns
    10V
    ±20V
    10 ns
    75 ns
    44A
    20V
    500V
    176A
    -
    ROHS3 Compliant
    -
    1 (Unlimited)
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    0.12Ohm
    2500 mJ
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFX240N15T2
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    247
    SILICON
    -55°C~175°C TJ
    Tube
    GigaMOS™
    2009
    e1
    yes
    Active
    3
    EAR99
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    3
    1
    1250W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    5.2m Ω @ 60A, 10V
    5V @ 8mA
    32000pF @ 25V
    240A Tc
    460nC @ 10V
    125ns
    10V
    ±20V
    145 ns
    77 ns
    240A
    -
    -
    600A
    -
    ROHS3 Compliant
    Lead Free
    1 (Unlimited)
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    0.0052Ohm
    2000 mJ
    SINGLE
    R-PSIP-T3
    150V
    SINGLE WITH BUILT-IN DIODE
    120A
    240A
    48 ns
    1
  • IXFX73N30Q
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2004
    e1
    yes
    Active
    3
    -
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    -
    MOSFET (Metal Oxide)
    -
    3
    1
    500W Tc
    Single
    ENHANCEMENT MODE
    500W
    DRAIN
    N-Channel
    SWITCHING
    45m Ω @ 500mA, 10V
    4V @ 4mA
    5400pF @ 25V
    73A Tc
    195nC @ 10V
    36ns
    10V
    ±30V
    12 ns
    82 ns
    73A
    30V
    300V
    292A
    -
    ROHS3 Compliant
    -
    1 (Unlimited)
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    0.045Ohm
    2500 mJ
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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