IXYS IXFX180N10
- Part Number:
- IXFX180N10
- Manufacturer:
- IXYS
- Ventron No:
- 2851196-IXFX180N10
- Description:
- MOSFET N-CH 100V 180A PLUS247
- Datasheet:
- IXFX180N10
IXYS IXFX180N10 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX180N10.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2000
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Number of Terminations3
- ECCN CodeEAR99
- Resistance8MOhm
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating180A
- Pin Count3
- Number of Elements1
- Power Dissipation-Max560W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation560W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8m Ω @ 90A, 10V
- Vgs(th) (Max) @ Id4V @ 8mA
- Input Capacitance (Ciss) (Max) @ Vds10900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C180A Tc
- Gate Charge (Qg) (Max) @ Vgs390nC @ 10V
- Rise Time90ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)65 ns
- Turn-Off Delay Time140 ns
- Continuous Drain Current (ID)180A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)720A
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IXFX180N10 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10900pF @ 25V.This device conducts a continuous drain current (ID) of 180A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 140 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 720A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFX180N10 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.
IXFX180N10 Applications
There are a lot of IXYS
IXFX180N10 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10900pF @ 25V.This device conducts a continuous drain current (ID) of 180A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 140 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 720A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFX180N10 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.
IXFX180N10 Applications
There are a lot of IXYS
IXFX180N10 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFX180N10 More Descriptions
Trans MOSFET N-CH 100V 180A 3-Pin(3 Tab) PLUS 247
MOSFET N-CH 100V 180A PLUS247
OEMs, CMs ONLY (NO BROKERS)
THERMOSTAT 72DEG C NC 2-SMD SLDR
new, original packaged
Contact for details
MOSFET N-CH 100V 180A PLUS247
OEMs, CMs ONLY (NO BROKERS)
THERMOSTAT 72DEG C NC 2-SMD SLDR
new, original packaged
Contact for details
The three parts on the right have similar specifications to IXFX180N10.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusNumber of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusLead FreeMoisture Sensitivity Level (MSL)Peak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)Terminal PositionJESD-30 CodeOutput VoltageConfigurationNominal Supply CurrentOutput CurrentTurn On Delay TimeNumber of DriversView Compare
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IXFX180N108 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsolete3EAR998MOhmTin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose Power100VMOSFET (Metal Oxide)180A31560W TcSingleENHANCEMENT MODE560WDRAINN-ChannelSWITCHING8m Ω @ 90A, 10V4V @ 8mA10900pF @ 25V180A Tc390nC @ 10V90ns10V±20V65 ns140 ns180A20V100V720ANoRoHS CompliantLead Free---------------
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-Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2003e1yesActive3--Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED--MOSFET (Metal Oxide)-31500W TcSingleENHANCEMENT MODE500WDRAINN-ChannelSWITCHING120m Ω @ 22A, 10V4V @ 4mA7000pF @ 25V44A Tc190nC @ 10V22ns10V±20V10 ns75 ns44A20V500V176A-ROHS3 Compliant-1 (Unlimited)NOT SPECIFIEDNOT SPECIFIEDNot Qualified0.12Ohm2500 mJ--------
-
30 WeeksThrough HoleThrough HoleTO-247-3247SILICON-55°C~175°C TJTubeGigaMOS™2009e1yesActive3EAR99-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose Power-MOSFET (Metal Oxide)-311250W Tc-ENHANCEMENT MODE-DRAINN-ChannelSWITCHING5.2m Ω @ 60A, 10V5V @ 8mA32000pF @ 25V240A Tc460nC @ 10V125ns10V±20V145 ns77 ns240A--600A-ROHS3 CompliantLead Free1 (Unlimited)NOT SPECIFIEDNOT SPECIFIEDNot Qualified0.0052Ohm2000 mJSINGLER-PSIP-T3150VSINGLE WITH BUILT-IN DIODE120A240A48 ns1
-
-Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2004e1yesActive3--Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED--MOSFET (Metal Oxide)-31500W TcSingleENHANCEMENT MODE500WDRAINN-ChannelSWITCHING45m Ω @ 500mA, 10V4V @ 4mA5400pF @ 25V73A Tc195nC @ 10V36ns10V±30V12 ns82 ns73A30V300V292A-ROHS3 Compliant-1 (Unlimited)NOT SPECIFIEDNOT SPECIFIEDNot Qualified0.045Ohm2500 mJ--------
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