IXYS IXFX44N50Q
- Part Number:
- IXFX44N50Q
- Manufacturer:
- IXYS
- Ventron No:
- 2851236-IXFX44N50Q
- Description:
- MOSFET N-CH 500V 44A PLUS247
- Datasheet:
- IXFX44N50Q
IXYS IXFX44N50Q technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX44N50Q.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2003
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max500W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation500W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs120m Ω @ 22A, 10V
- Vgs(th) (Max) @ Id4V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds7000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C44A Tc
- Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
- Rise Time22ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time75 ns
- Continuous Drain Current (ID)44A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.12Ohm
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)176A
- Avalanche Energy Rating (Eas)2500 mJ
- RoHS StatusROHS3 Compliant
IXFX44N50Q Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 44A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 176A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFX44N50Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
IXFX44N50Q Applications
There are a lot of IXYS
IXFX44N50Q applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 44A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 176A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFX44N50Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
IXFX44N50Q Applications
There are a lot of IXYS
IXFX44N50Q applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IXFX44N50Q More Descriptions
MOSFET N-CH 500V 44A PLUS247-3
The three parts on the right have similar specifications to IXFX44N50Q.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusFactory Lead TimeSubcategoryTerminal PositionJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinLead FreeView Compare
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IXFX44N50QThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2003e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1500W TcSingleENHANCEMENT MODE500WDRAINN-ChannelSWITCHING120m Ω @ 22A, 10V4V @ 4mA7000pF @ 25V44A Tc190nC @ 10V22ns10V±20V10 ns75 ns44A20V0.12Ohm500V176A2500 mJROHS3 Compliant---------
-
Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2002e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1416W TcSingleENHANCEMENT MODE416WDRAINN-ChannelSWITCHING160m Ω @ 15A, 10V4.5V @ 4mA3950pF @ 25V30A Tc150nC @ 10V42ns10V±20V20 ns75 ns30A20V0.16Ohm500V120A1500 mJRoHS Compliant--------
-
Through HoleThrough HoleTO-247-3-SILICON-55°C~150°C TJTubeHiPerFET™, PolarP2™2008--Active1 (Unlimited)3-AVALANCHE RATEDMOSFET (Metal Oxide)--3-1960W Tc-ENHANCEMENT MODE-DRAINN-ChannelSWITCHING300m Ω @ 16A, 10V6.5V @ 1mA10600pF @ 25V32A Tc215nC @ 10V-10V±30V--32A-0.3Ohm-80A2000 mJROHS3 Compliant30 WeeksFET General Purpose PowerSINGLER-PSIP-T3SINGLE WITH BUILT-IN DIODE900V900VLead Free
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Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2004e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1500W TcSingleENHANCEMENT MODE500WDRAINN-ChannelSWITCHING45m Ω @ 500mA, 10V4V @ 4mA5400pF @ 25V73A Tc195nC @ 10V36ns10V±30V12 ns82 ns73A30V0.045Ohm300V292A2500 mJROHS3 Compliant--------
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