IXYS IXFX120N25P

Name: IXFX120N25P
Brand: IXYS
SKU: 2851218-IXFX120N25P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXFX120N25P

Manufacturer:: IXYS

Ventron No:: 2851218-IXFX120N25P

Description:: MOSFET N-CH 250V 120A PLUS247

ECAD Model:

Datasheet:: IXFX120N25P

Specifications

IXYS IXFX120N25P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX120N25P.

Factory Lead Time
30 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
PolarHT™ HiPerFET™
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
24MOhm
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
700W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
700W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
24m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds
8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
185nC @ 10V
Rise Time
33ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
33 ns
Turn-Off Delay Time
130 ns
Continuous Drain Current (ID)
120A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
250V
Avalanche Energy Rating (Eas)
2500 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXFX120N25P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2500 mJ.A device's maximal input capacitance is 8000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 120A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 130 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).

IXFX120N25P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 130 ns

IXFX120N25P Applications
There are a lot of IXYS
IXFX120N25P applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IXFX120N25P More Descriptions

Single N-Channel 250 V 24 mOhm 700 W Power Mosfet - PLUS 247
Trans MOSFET N-CH 250V 120A 3-Pin(3 Tab) PLUS 247
MOSFET 120 Amps 250 V 0.24 Ohm Rds
MOSFET N-CH 250V 120A PLUS247-3

Product Comparison

The three parts on the right have similar specifications to IXFX120N25P.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Voltage - Rated DC

Current Rating

Pulsed Drain Current-Max (IDM)

Radiation Hardening

Terminal Position

JESD-30 Code

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Output Voltage

Nominal Supply Current

Output Current

Turn On Delay Time

Number of Drivers

View Compare
IXFX120N25P

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

Tube

PolarHT™ HiPerFET™

2006

e1

yes

Active

1 (Unlimited)

3

EAR99

24MOhm

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

3

Not Qualified

1

700W Tc

Single

ENHANCEMENT MODE

700W

DRAIN

N-Channel

SWITCHING

24m Ω @ 60A, 10V

5V @ 4mA

8000pF @ 25V

120A Tc

185nC @ 10V

33ns

10V

±20V

33 ns

130 ns

120A

20V

250V

2500 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXFX180N10

IXYS

8 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

HiPerFET™

2000

e1

yes

Obsolete

-

3

EAR99

8MOhm

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

3

-

1

560W Tc

Single

ENHANCEMENT MODE

560W

DRAIN

N-Channel

SWITCHING

8m Ω @ 90A, 10V

4V @ 8mA

10900pF @ 25V

180A Tc

390nC @ 10V

90ns

10V

±20V

65 ns

140 ns

180A

20V

100V

-

RoHS Compliant

Lead Free

100V

180A

720A

No

-

-

-

-

-

-

-

-

-

-

-

IXFX120N25P vs IXFX180N10
IXFX32N90P

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

-

SILICON

-55°C~150°C TJ

Tube

HiPerFET™, PolarP2™

2008

-

-

Active

1 (Unlimited)

3

-

-

-

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

3

-

1

960W Tc

-

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

300m Ω @ 16A, 10V

6.5V @ 1mA

10600pF @ 25V

32A Tc

215nC @ 10V

-

10V

±30V

-

-

32A

-

-

2000 mJ

ROHS3 Compliant

Lead Free

-

-

80A

-

SINGLE

R-PSIP-T3

SINGLE WITH BUILT-IN DIODE

900V

0.3Ohm

900V

-

-

-

-

-

IXFX120N25P vs IXFX32N90P
IXFX240N15T2

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

247

SILICON

-55°C~175°C TJ

Tube

GigaMOS™

2009

e1

yes

Active

1 (Unlimited)

3

EAR99

-

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

3

Not Qualified

1

1250W Tc

-

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

5.2m Ω @ 60A, 10V

5V @ 8mA

32000pF @ 25V

240A Tc

460nC @ 10V

125ns

10V

±20V

145 ns

77 ns

240A

-

-

2000 mJ

ROHS3 Compliant

Lead Free

-

-

600A

-

SINGLE

R-PSIP-T3

SINGLE WITH BUILT-IN DIODE

-

0.0052Ohm

-

150V

120A

240A

48 ns

1

IXFX120N25P vs IXFX240N15T2