IXYS IXFX66N50Q2

IXFX66N50Q2 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 9125pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 66A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 264A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).

IXFX66N50Q2 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 264A.


IXFX66N50Q2 Applications
There are a lot of IXYS
IXFX66N50Q2 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples