IXYS IXFX30N50Q
- Part Number:
- IXFX30N50Q
- Manufacturer:
- IXYS
- Ventron No:
- 2851260-IXFX30N50Q
- Description:
- MOSFET N-CH 500V 30A PLUS247
- Datasheet:
- IXF(K,X)30N50Q, 32N50Q
IXYS IXFX30N50Q technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX30N50Q.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2002
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max416W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation416W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id4.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds3950pF @ 25V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Rise Time42ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time75 ns
- Continuous Drain Current (ID)30A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.16Ohm
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)120A
- Avalanche Energy Rating (Eas)1500 mJ
- RoHS StatusRoHS Compliant
IXFX30N50Q Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3950pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 120A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFX30N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 120A.
IXFX30N50Q Applications
There are a lot of IXYS
IXFX30N50Q applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3950pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 120A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFX30N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 120A.
IXFX30N50Q Applications
There are a lot of IXYS
IXFX30N50Q applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFX30N50Q More Descriptions
MOSFET N-CH 500V 30A PLUS247
The three parts on the right have similar specifications to IXFX30N50Q.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusSubcategoryView Compare
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IXFX30N50QThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2002e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1416W TcSingleENHANCEMENT MODE416WDRAINN-ChannelSWITCHING160m Ω @ 15A, 10V4.5V @ 4mA3950pF @ 25V30A Tc150nC @ 10V42ns10V±20V20 ns75 ns30A20V0.16Ohm500V120A1500 mJRoHS Compliant--
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Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2003e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1560W TcSingleENHANCEMENT MODE560WDRAINN-ChannelSWITCHING330m Ω @ 500mA, 10V5V @ 8mA10800pF @ 25V25A Tc240nC @ 10V35ns10V±20V24 ns130 ns25A20V-900V100A-RoHS CompliantFET General Purpose Power
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Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2003e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1500W TcSingleENHANCEMENT MODE500WDRAINN-ChannelSWITCHING120m Ω @ 22A, 10V4V @ 4mA7000pF @ 25V44A Tc190nC @ 10V22ns10V±20V10 ns75 ns44A20V0.12Ohm500V176A2500 mJROHS3 Compliant-
-
Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2004e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1500W TcSingleENHANCEMENT MODE500WDRAINN-ChannelSWITCHING45m Ω @ 500mA, 10V4V @ 4mA5400pF @ 25V73A Tc195nC @ 10V36ns10V±30V12 ns82 ns73A30V0.045Ohm300V292A2500 mJROHS3 Compliant-
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