IXFX240N15T2

IXYS IXFX240N15T2

Part Number:
IXFX240N15T2
Manufacturer:
IXYS
Ventron No:
2851162-IXFX240N15T2
Description:
MOSFET N-CH 150V 240A PLUS247
ECAD Model:
Datasheet:
IXFX240N15T2

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Specifications
IXYS IXFX240N15T2 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX240N15T2.
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    247
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    GigaMOS™
  • Published
    2009
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status
    Not Qualified
  • Output Voltage
    150V
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    1250W Tc
  • Nominal Supply Current
    120A
  • Operating Mode
    ENHANCEMENT MODE
  • Output Current
    240A
  • Case Connection
    DRAIN
  • Turn On Delay Time
    48 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.2m Ω @ 60A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 8mA
  • Input Capacitance (Ciss) (Max) @ Vds
    32000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    240A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    460nC @ 10V
  • Rise Time
    125ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    145 ns
  • Turn-Off Delay Time
    77 ns
  • Continuous Drain Current (ID)
    240A
  • Drain-source On Resistance-Max
    0.0052Ohm
  • Pulsed Drain Current-Max (IDM)
    600A
  • Avalanche Energy Rating (Eas)
    2000 mJ
  • Number of Drivers
    1
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXFX240N15T2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 32000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 240A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 77 ns.Peak drain current is 600A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 48 ns.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFX240N15T2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 240A
the turn-off delay time is 77 ns
based on its rated peak drain current 600A.


IXFX240N15T2 Applications
There are a lot of IXYS
IXFX240N15T2 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IXFX240N15T2 More Descriptions
N-Channel 150 V 240 A 5.2 mO Through Hole GigaMOS Power Mosfet - PLUS247
Trans MOSFET N-CH 150V 240A 3-Pin(3 Tab) PLUS 247
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
MOSFET N-CH 150V 240A PLUS247-3
Product Comparison
The three parts on the right have similar specifications to IXFX240N15T2.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Output Voltage
    Number of Elements
    Configuration
    Power Dissipation-Max
    Nominal Supply Current
    Operating Mode
    Output Current
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Number of Drivers
    RoHS Status
    Lead Free
    Resistance
    Element Configuration
    Power Dissipation
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Voltage - Rated DC
    Current Rating
    Radiation Hardening
    View Compare
  • IXFX240N15T2
    IXFX240N15T2
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    247
    SILICON
    -55°C~175°C TJ
    Tube
    GigaMOS™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    R-PSIP-T3
    Not Qualified
    150V
    1
    SINGLE WITH BUILT-IN DIODE
    1250W Tc
    120A
    ENHANCEMENT MODE
    240A
    DRAIN
    48 ns
    N-Channel
    SWITCHING
    5.2m Ω @ 60A, 10V
    5V @ 8mA
    32000pF @ 25V
    240A Tc
    460nC @ 10V
    125ns
    10V
    ±20V
    145 ns
    77 ns
    240A
    0.0052Ohm
    600A
    2000 mJ
    1
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFX120N25P
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    PolarHT™ HiPerFET™
    2006
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    Not Qualified
    -
    1
    -
    700W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    24m Ω @ 60A, 10V
    5V @ 4mA
    8000pF @ 25V
    120A Tc
    185nC @ 10V
    33ns
    10V
    ±20V
    33 ns
    130 ns
    120A
    -
    -
    2500 mJ
    -
    ROHS3 Compliant
    Lead Free
    24MOhm
    Single
    700W
    20V
    250V
    -
    -
    -
  • IXFX180N10
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    e1
    yes
    Obsolete
    -
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    3
    -
    -
    -
    1
    -
    560W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    8m Ω @ 90A, 10V
    4V @ 8mA
    10900pF @ 25V
    180A Tc
    390nC @ 10V
    90ns
    10V
    ±20V
    65 ns
    140 ns
    180A
    -
    720A
    -
    -
    RoHS Compliant
    Lead Free
    8MOhm
    Single
    560W
    20V
    100V
    100V
    180A
    No
  • IXFX73N30Q
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2004
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    Not Qualified
    -
    1
    -
    500W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    45m Ω @ 500mA, 10V
    4V @ 4mA
    5400pF @ 25V
    73A Tc
    195nC @ 10V
    36ns
    10V
    ±30V
    12 ns
    82 ns
    73A
    0.045Ohm
    292A
    2500 mJ
    -
    ROHS3 Compliant
    -
    -
    Single
    500W
    30V
    300V
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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