IXYS IXFX240N15T2
- Part Number:
- IXFX240N15T2
- Manufacturer:
- IXYS
- Ventron No:
- 2851162-IXFX240N15T2
- Description:
- MOSFET N-CH 150V 240A PLUS247
- Datasheet:
- IXFX240N15T2
IXYS IXFX240N15T2 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX240N15T2.
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins247
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesGigaMOS™
- Published2009
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Output Voltage150V
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1250W Tc
- Nominal Supply Current120A
- Operating ModeENHANCEMENT MODE
- Output Current240A
- Case ConnectionDRAIN
- Turn On Delay Time48 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.2m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id5V @ 8mA
- Input Capacitance (Ciss) (Max) @ Vds32000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C240A Tc
- Gate Charge (Qg) (Max) @ Vgs460nC @ 10V
- Rise Time125ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)145 ns
- Turn-Off Delay Time77 ns
- Continuous Drain Current (ID)240A
- Drain-source On Resistance-Max0.0052Ohm
- Pulsed Drain Current-Max (IDM)600A
- Avalanche Energy Rating (Eas)2000 mJ
- Number of Drivers1
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFX240N15T2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 32000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 240A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 77 ns.Peak drain current is 600A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 48 ns.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFX240N15T2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 240A
the turn-off delay time is 77 ns
based on its rated peak drain current 600A.
IXFX240N15T2 Applications
There are a lot of IXYS
IXFX240N15T2 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 32000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 240A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 77 ns.Peak drain current is 600A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 48 ns.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFX240N15T2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 240A
the turn-off delay time is 77 ns
based on its rated peak drain current 600A.
IXFX240N15T2 Applications
There are a lot of IXYS
IXFX240N15T2 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IXFX240N15T2 More Descriptions
N-Channel 150 V 240 A 5.2 mO Through Hole GigaMOS Power Mosfet - PLUS247
Trans MOSFET N-CH 150V 240A 3-Pin(3 Tab) PLUS 247
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
MOSFET N-CH 150V 240A PLUS247-3
Trans MOSFET N-CH 150V 240A 3-Pin(3 Tab) PLUS 247
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
MOSFET N-CH 150V 240A PLUS247-3
The three parts on the right have similar specifications to IXFX240N15T2.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOutput VoltageNumber of ElementsConfigurationPower Dissipation-MaxNominal Supply CurrentOperating ModeOutput CurrentCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Number of DriversRoHS StatusLead FreeResistanceElement ConfigurationPower DissipationGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageVoltage - Rated DCCurrent RatingRadiation HardeningView Compare
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IXFX240N15T230 WeeksThrough HoleThrough HoleTO-247-3247SILICON-55°C~175°C TJTubeGigaMOS™2009e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3Not Qualified150V1SINGLE WITH BUILT-IN DIODE1250W Tc120AENHANCEMENT MODE240ADRAIN48 nsN-ChannelSWITCHING5.2m Ω @ 60A, 10V5V @ 8mA32000pF @ 25V240A Tc460nC @ 10V125ns10V±20V145 ns77 ns240A0.0052Ohm600A2000 mJ1ROHS3 CompliantLead Free---------
-
30 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTubePolarHT™ HiPerFET™2006e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED3-Not Qualified-1-700W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING24m Ω @ 60A, 10V5V @ 4mA8000pF @ 25V120A Tc185nC @ 10V33ns10V±20V33 ns130 ns120A--2500 mJ-ROHS3 CompliantLead Free24MOhmSingle700W20V250V---
-
8 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsolete-3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)---3---1-560W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING8m Ω @ 90A, 10V4V @ 8mA10900pF @ 25V180A Tc390nC @ 10V90ns10V±20V65 ns140 ns180A-720A--RoHS CompliantLead Free8MOhmSingle560W20V100V100V180ANo
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-Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2004e1yesActive1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED3-Not Qualified-1-500W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING45m Ω @ 500mA, 10V4V @ 4mA5400pF @ 25V73A Tc195nC @ 10V36ns10V±30V12 ns82 ns73A0.045Ohm292A2500 mJ-ROHS3 Compliant--Single500W30V300V---
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