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IRLR8726PBF

Infineon Technologies IRLR8726PBF

Part Number:
IRLR8726PBF
Manufacturer:
Infineon Technologies
Ventron No:
2483201-IRLR8726PBF
Description:
MOSFET N-CH 30V 86A DPAK
ECAD Model:
Datasheet:
IRLR8726PBF

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Specifications
Infineon Technologies IRLR8726PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR8726PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Published
    2004
  • Series
    HEXFET®
  • Packaging
    Tube
  • Operating Temperature
    -55°C~175°C TJ
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    5.8MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    75W Tc
  • Element Configuration
    Single
  • Power Dissipation
    75W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5.8m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    2.35V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2150pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    86A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 4.5V
  • Rise Time
    49ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    86A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Recovery Time
    36 ns
  • Nominal Vgs
    1.8 V
  • Height
    2.3876mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • RoHS Status
    ROHS3 Compliant
  • Radiation Hardening
    No
  • REACH SVHC
    No SVHC
  • Lead Free
    Lead Free
Description
IRLR8726PBF Description
IRLR8726PBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. It is able to provide extremely low RDS (on), ultra-low gate impedance, and fully characterized avalanche voltage and current. All of these enable the power MOSFET IRLR8729PBF to be efficient and reliable in various applications.

IRLR8726PBF Features
Extremely low RDS (on)
Ultra-low gate impedance
Available in the D-Pak package
Full characterized avalanche voltage and current

IRLR8726PBF Applications
High-frequency synchronous buck converters for computer processor power
High-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use
IRLR8726PBF More Descriptions
Single N-Channel 30 V 5.8 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant
MOSFET, N-CH 30V 86A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:D-PAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Product Comparison
The three parts on the right have similar specifications to IRLR8726PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Published
    Series
    Packaging
    Operating Temperature
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    ECCN Code
    Resistance
    Technology
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    RoHS Status
    Radiation Hardening
    REACH SVHC
    Lead Free
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Input Capacitance
    Rds On Max
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Drain to Source Resistance
    View Compare
  • IRLR8726PBF
    IRLR8726PBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    2004
    HEXFET®
    Tube
    -55°C~175°C TJ
    Discontinued
    1 (Unlimited)
    SMD/SMT
    EAR99
    5.8MOhm
    MOSFET (Metal Oxide)
    75W Tc
    Single
    75W
    12 ns
    N-Channel
    5.8m Ω @ 25A, 10V
    2.35V @ 50μA
    2150pF @ 15V
    86A Tc
    23nC @ 4.5V
    49ns
    4.5V 10V
    ±20V
    16 ns
    15 ns
    86A
    1.8V
    20V
    30V
    30V
    36 ns
    1.8 V
    2.3876mm
    6.7056mm
    6.22mm
    ROHS3 Compliant
    No
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR3103
    IRLR3103
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    1998
    HEXFET®
    Tube
    -55°C~175°C TJ
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    107W Tc
    -
    -
    -
    N-Channel
    19m Ω @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    -
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    YES
    SILICON
    e0
    2
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    SINGLE
    GULL WING
    245
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    30V
    TO-252AA
    20A
    0.019Ohm
    220A
    30V
    240 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    IRLR8726PBF vs IRLR3103
  • IRLR024TRR
    IRLR024TRR
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    1997
    -
    Tape & Reel (TR)
    -55°C~150°C TJ
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    2.5W Ta 42W Tc
    -
    -
    -
    N-Channel
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    -
    4V 5V
    ±10V
    -
    -
    14A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    -
    -
    -
    -
    -
    -
    D-Pak
    870pF
    100 mΩ
    -
    -
    -
    -
    -
    IRLR8726PBF vs IRLR024TRR
  • IRLR024TR
    IRLR024TR
    Vishay Siliconix
    21 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    2
    2016
    -
    Tape & Reel (TR)
    -55°C~150°C TJ
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    2.5W Ta 42W Tc
    Single
    2.5W
    11 ns
    N-Channel
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    110ns
    4V 5V
    ±10V
    41 ns
    23 ns
    14A
    -
    10V
    60V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    No
    -
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    -
    -
    -
    -
    -
    -
    D-Pak
    870pF
    100 mΩ
    150°C
    -55°C
    60V
    14A
    100mOhm
    IRLR8726PBF vs IRLR024TR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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