Infineon Technologies IRLR2703PBF
- Part Number:
- IRLR2703PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853821-IRLR2703PBF
- Description:
- MOSFET N-CH 30V 23A DPAK
- Datasheet:
- IRLR2703PBF
Infineon Technologies IRLR2703PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR2703PBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance45mOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating23A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max45W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation38W
- Case ConnectionDRAIN
- Turn On Delay Time8.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs45m Ω @ 14A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds450pF @ 25V
- Current - Continuous Drain (Id) @ 25°C23A Tc
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Rise Time140ns
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±16V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)23A
- Threshold Voltage1V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)96A
- Dual Supply Voltage30V
- Avalanche Energy Rating (Eas)77 mJ
- Recovery Time97 ns
- Nominal Vgs1 V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLR2703PBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 77 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 25V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
IRLR2703PBF Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 96A.
a threshold voltage of 1V
IRLR2703PBF Applications
There are a lot of Infineon Technologies
IRLR2703PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 77 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 25V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
IRLR2703PBF Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 96A.
a threshold voltage of 1V
IRLR2703PBF Applications
There are a lot of Infineon Technologies
IRLR2703PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
The three parts on the right have similar specifications to IRLR2703PBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Supplier Device PackageFactory Lead TimeMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRLR2703PBFSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTubeHEXFET®2003e3Discontinued1 (Unlimited)2EAR9945mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose Power30VMOSFET (Metal Oxide)GULL WING26023A30R-PSSO-G2145W TcSingleENHANCEMENT MODE38WDRAIN8.5 nsN-ChannelSWITCHING45m Ω @ 14A, 10V1V @ 250μA450pF @ 25V23A Tc15nC @ 4.5V140ns4V 10V±16V20 ns12 ns23A1VTO-252AA16V30V96A30V77 mJ97 ns1 V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free------------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2001-Obsolete1 (Unlimited)-----FET General Purpose Power-MOSFET (Metal Oxide)------28W Tc-ENHANCEMENT MODE---N-Channel-140m Ω @ 6A, 10V1V @ 250μA265pF @ 25V10A Tc7.9nC @ 5V-4.5V 10V±16V-----------------Non-RoHS Compliant-YESSingle55V10A-------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®1998-Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)------107W Tc-----N-Channel-19mOhm @ 33A, 10V1V @ 250μA1600pF @ 25V55A Tc50nC @ 4.5V-4.5V 10V±16V-----------------Non-RoHS Compliant---30V-D-Pak------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-632--55°C~150°C TJTape & Reel (TR)-2016-Active1 (Unlimited)------60VMOSFET (Metal Oxide)--14A---2.5W Ta 42W TcSingle-2.5W-11 nsN-Channel-100mOhm @ 8.4A, 5V2V @ 250μA870pF @ 25V14A Tc18nC @ 5V110ns4V 5V±10V41 ns23 ns14A--10V60V---------NoNon-RoHS CompliantContains Lead--60V-D-Pak21 Weeks150°C-55°C870pF100mOhm100 mΩ
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