IRLR2703PBF

Infineon Technologies IRLR2703PBF

Part Number:
IRLR2703PBF
Manufacturer:
Infineon Technologies
Ventron No:
2853821-IRLR2703PBF
Description:
MOSFET N-CH 30V 23A DPAK
ECAD Model:
Datasheet:
IRLR2703PBF

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Specifications
Infineon Technologies IRLR2703PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR2703PBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    45mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    23A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    45W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    38W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    45m Ω @ 14A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    450pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    23A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 4.5V
  • Rise Time
    140ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    23A
  • Threshold Voltage
    1V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    96A
  • Dual Supply Voltage
    30V
  • Avalanche Energy Rating (Eas)
    77 mJ
  • Recovery Time
    97 ns
  • Nominal Vgs
    1 V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLR2703PBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 77 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 25V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).

IRLR2703PBF Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 96A.
a threshold voltage of 1V


IRLR2703PBF Applications
There are a lot of Infineon Technologies
IRLR2703PBF applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
Product Comparison
The three parts on the right have similar specifications to IRLR2703PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Supplier Device Package
    Factory Lead Time
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRLR2703PBF
    IRLR2703PBF
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    45mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    GULL WING
    260
    23A
    30
    R-PSSO-G2
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    38W
    DRAIN
    8.5 ns
    N-Channel
    SWITCHING
    45m Ω @ 14A, 10V
    1V @ 250μA
    450pF @ 25V
    23A Tc
    15nC @ 4.5V
    140ns
    4V 10V
    ±16V
    20 ns
    12 ns
    23A
    1V
    TO-252AA
    16V
    30V
    96A
    30V
    77 mJ
    97 ns
    1 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR014NTRR
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    28W Tc
    -
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    -
    140m Ω @ 6A, 10V
    1V @ 250μA
    265pF @ 25V
    10A Tc
    7.9nC @ 5V
    -
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    Single
    55V
    10A
    -
    -
    -
    -
    -
    -
    -
  • IRLR3103TRR
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    107W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    19mOhm @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    -
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    30V
    -
    D-Pak
    -
    -
    -
    -
    -
    -
  • IRLR024TR
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    2
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    -
    -
    14A
    -
    -
    -
    2.5W Ta 42W Tc
    Single
    -
    2.5W
    -
    11 ns
    N-Channel
    -
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    110ns
    4V 5V
    ±10V
    41 ns
    23 ns
    14A
    -
    -
    10V
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    60V
    -
    D-Pak
    21 Weeks
    150°C
    -55°C
    870pF
    100mOhm
    100 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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