IRLR2705TRRPBF

Infineon Technologies IRLR2705TRRPBF

Part Number:
IRLR2705TRRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2854001-IRLR2705TRRPBF
Description:
MOSFET N-CH 55V 28A DPAK
ECAD Model:
Datasheet:
IRLR2705TRRPBF

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Specifications
Infineon Technologies IRLR2705TRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR2705TRRPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2005
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    68W Tc
  • Element Configuration
    Single
  • Power Dissipation
    46W
  • Turn On Delay Time
    8.9 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    40mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    880pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    28A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 5V
  • Rise Time
    100ns
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    29 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    28A
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    55V
  • Input Capacitance
    880pF
  • Drain to Source Resistance
    65mOhm
  • Rds On Max
    40 mΩ
  • Height
    2.3876mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRLR2705TRRPBF Overview
A device's maximum input capacitance is 880pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 28A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 65mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (4V 10V) to reduce its overall power consumption.

IRLR2705TRRPBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 65mOhm
a 55V drain to source voltage (Vdss)


IRLR2705TRRPBF Applications
There are a lot of Infineon Technologies
IRLR2705TRRPBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLR2705TRRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Trans MOSFET N-CH 55V 28A 3-Pin(2 Tab) DPAK T/R
Multilayer Ceramic Capacitors MLCC - Leaded 150pF 50volts X8G /-5% L/S 2.5mm
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRLR2705TRRPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    JEDEC-95 Code
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    Lead Free
    View Compare
  • IRLR2705TRRPBF
    IRLR2705TRRPBF
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    D-Pak
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    68W Tc
    Single
    46W
    8.9 ns
    N-Channel
    40mOhm @ 17A, 10V
    2V @ 250μA
    880pF @ 25V
    28A Tc
    25nC @ 5V
    100ns
    55V
    4V 10V
    ±16V
    29 ns
    21 ns
    28A
    16V
    55V
    880pF
    65mOhm
    40 mΩ
    2.3876mm
    6.7056mm
    6.22mm
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR3105PBF
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    Discontinued
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    57W Tc
    Single
    57W
    8 ns
    N-Channel
    37m Ω @ 15A, 10V
    3V @ 250μA
    710pF @ 25V
    25A Tc
    20nC @ 5V
    57ns
    -
    5V 10V
    ±16V
    37 ns
    25 ns
    25A
    16V
    55V
    -
    -
    -
    2.39mm
    6.73mm
    6.223mm
    No
    ROHS3 Compliant
    SILICON
    e3
    2
    EAR99
    37mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    55V
    GULL WING
    260
    25A
    30
    R-PSSO-G2
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    3V
    TO-252AA
    55V
    3 V
    No SVHC
    Lead Free
  • IRLR3103TRR
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    D-Pak
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    107W Tc
    -
    -
    -
    N-Channel
    19mOhm @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    -
    30V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR024TRR
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    D-Pak
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    1997
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    2.5W Ta 42W Tc
    -
    -
    -
    N-Channel
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    -
    60V
    4V 5V
    ±10V
    -
    -
    14A
    -
    -
    870pF
    -
    100 mΩ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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