Infineon Technologies IRLR2705TRRPBF
- Part Number:
- IRLR2705TRRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854001-IRLR2705TRRPBF
- Description:
- MOSFET N-CH 55V 28A DPAK
- Datasheet:
- IRLR2705TRRPBF
Infineon Technologies IRLR2705TRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR2705TRRPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max68W Tc
- Element ConfigurationSingle
- Power Dissipation46W
- Turn On Delay Time8.9 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs40mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds880pF @ 25V
- Current - Continuous Drain (Id) @ 25°C28A Tc
- Gate Charge (Qg) (Max) @ Vgs25nC @ 5V
- Rise Time100ns
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±16V
- Fall Time (Typ)29 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)28A
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage55V
- Input Capacitance880pF
- Drain to Source Resistance65mOhm
- Rds On Max40 mΩ
- Height2.3876mm
- Length6.7056mm
- Width6.22mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRLR2705TRRPBF Overview
A device's maximum input capacitance is 880pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 28A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 65mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
IRLR2705TRRPBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 65mOhm
a 55V drain to source voltage (Vdss)
IRLR2705TRRPBF Applications
There are a lot of Infineon Technologies
IRLR2705TRRPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 880pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 28A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 65mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
IRLR2705TRRPBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 65mOhm
a 55V drain to source voltage (Vdss)
IRLR2705TRRPBF Applications
There are a lot of Infineon Technologies
IRLR2705TRRPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLR2705TRRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Trans MOSFET N-CH 55V 28A 3-Pin(2 Tab) DPAK T/R
Multilayer Ceramic Capacitors MLCC - Leaded 150pF 50volts X8G /-5% L/S 2.5mm
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Trans MOSFET N-CH 55V 28A 3-Pin(2 Tab) DPAK T/R
Multilayer Ceramic Capacitors MLCC - Leaded 150pF 50volts X8G /-5% L/S 2.5mm
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRLR2705TRRPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageJEDEC-95 CodeDual Supply VoltageNominal VgsREACH SVHCLead FreeView Compare
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IRLR2705TRRPBFSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak-55°C~175°C TJTape & Reel (TR)HEXFET®2005Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)168W TcSingle46W8.9 nsN-Channel40mOhm @ 17A, 10V2V @ 250μA880pF @ 25V28A Tc25nC @ 5V100ns55V4V 10V±16V29 ns21 ns28A16V55V880pF65mOhm40 mΩ2.3876mm6.7056mm6.22mmNoRoHS Compliant------------------------
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633--55°C~175°C TJTubeHEXFET®2008Discontinued1 (Unlimited)--MOSFET (Metal Oxide)157W TcSingle57W8 nsN-Channel37m Ω @ 15A, 10V3V @ 250μA710pF @ 25V25A Tc20nC @ 5V57ns-5V 10V±16V37 ns25 ns25A16V55V---2.39mm6.73mm6.223mmNoROHS3 CompliantSILICONe32EAR9937mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCEFET General Purpose Power55VGULL WING26025A30R-PSSO-G2ENHANCEMENT MODEDRAINSWITCHING3VTO-252AA55V3 VNo SVHCLead Free
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-D-Pak-55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-107W Tc---N-Channel19mOhm @ 33A, 10V1V @ 250μA1600pF @ 25V55A Tc50nC @ 4.5V-30V4.5V 10V±16V------------Non-RoHS Compliant-----------------------
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-D-Pak-55°C~150°C TJTape & Reel (TR)-1997Active1 (Unlimited)--MOSFET (Metal Oxide)-2.5W Ta 42W Tc---N-Channel100mOhm @ 8.4A, 5V2V @ 250μA870pF @ 25V14A Tc18nC @ 5V-60V4V 5V±10V--14A--870pF-100 mΩ----Non-RoHS Compliant-----------------------
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