Vishay Siliconix IRLR120TRRPBF

Name: IRLR120TRRPBF
Brand: Vishay Siliconix
SKU: 2854805-IRLR120TRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLR120TRRPBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2854805-IRLR120TRRPBF

Description:: MOSFET N-CH 100V 7.7A DPAK

ECAD Model:

Datasheet:: IRLR(U)120,%20SiHLR(U)120

Specifications

Vishay Siliconix IRLR120TRRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLR120TRRPBF.

Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 42W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
9.8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
270m Ω @ 4.6A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
490pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.7A Tc
Gate Charge (Qg) (Max) @ Vgs
12nC @ 5V
Rise Time
64ns
Drive Voltage (Max Rds On,Min Rds On)
4V 5V
Vgs (Max)
±10V
Fall Time (Typ)
27 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
7.7A
Gate to Source Voltage (Vgs)
10V
Drain-source On Resistance-Max
0.27Ohm
Drain to Source Breakdown Voltage
100V
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

IRLR120TRRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 490pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.In addition to reducing power consumption, this device uses drive voltage (4V 5V).

IRLR120TRRPBF Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns

IRLR120TRRPBF Applications
There are a lot of Vishay Siliconix
IRLR120TRRPBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRLR120TRRPBF More Descriptions

IRLR120 Series 100 V 7.7 A 0.27 Ohm Single N-Channel MOSFET - TO-252-3
LOGIC MOSFET N-CHANNEL 100V
MOSFET N-CH 100V 7.7A DPAK
TO-252-3 MOSFETs ROHS
N-CH SINGLE 100V TO252
100V N-CH HEXFET D-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:7.7A; On Resistance, Rds(on):270mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:DPAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRLR120TRRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Surface Mount

Series

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Supplier Device Package

Input Capacitance

Rds On Max

View Compare
IRLR120TRRPBF

Vishay Siliconix

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

yes

Active

1 (Unlimited)

2

EAR99

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

40

3

R-PSSO-G2

1

1

2.5W Ta 42W Tc

Single

ENHANCEMENT MODE

DRAIN

9.8 ns

N-Channel

SWITCHING

270m Ω @ 4.6A, 5V

2V @ 250μA

490pF @ 25V

7.7A Tc

12nC @ 5V

64ns

4V 5V

±10V

27 ns

21 ns

7.7A

10V

0.27Ohm

100V

2.39mm

6.73mm

6.22mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
IRLR014NTRR

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

2001

-

Obsolete

1 (Unlimited)

-

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

28W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

140m Ω @ 6A, 10V

1V @ 250μA

265pF @ 25V

10A Tc

7.9nC @ 5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

YES

HEXFET®

Single

55V

10A

-

-

-

IRLR120TRRPBF vs IRLR014NTRR
IRLR3103TRR

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

1998

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

107W Tc

-

-

-

-

N-Channel

-

19mOhm @ 33A, 10V

1V @ 250μA

1600pF @ 25V

55A Tc

50nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

HEXFET®

-

30V

-

D-Pak

-

-

IRLR120TRRPBF vs IRLR3103TRR
IRLR024TRR

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

1997

-

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

2.5W Ta 42W Tc

-

-

-

-

N-Channel

-

100mOhm @ 8.4A, 5V

2V @ 250μA

870pF @ 25V

14A Tc

18nC @ 5V

-

4V 5V

±10V

-

-

14A

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

60V

-

D-Pak

870pF

100 mΩ

IRLR120TRRPBF vs IRLR024TRR

Certification

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IRLR120~~(26)~~
IRLR12~~(26)~~
IRLR1~~(42)~~
IRLR~~(55)~~
IRL~~(58)~~

Part Number	Manufacturers	Description	Price
IRLR120TRRPBF DISTI #	Vishay Siliconix	MOSFET N-CH 100V 7.7A DPAK RoHS: Compliant	3000 $0.73458
IRLR120TRRPBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 7.7A 3-Pin(2 Tab) DPAK T/R RoHS: Not Compliant	3000 $0.3969 6000 $0.3859 12000 $0.3699 18000 $0.3599 30000 $0.3499
IRLR120TRRPBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 7.7A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	3000 $0.5839 6000 $0.3979 12000 $0.3429 18000 $0.3159 30000 $0.2939
IRLR120TRRPBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 100V 7.7 Amp RoHS: Compliant	1 $1.28 10 $1.05 100 $0.803 500 $0.691 1000 $0.545 3000 $0.509 6000 $0.484 9000 $0.466
IRLR120TRRPBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 100V 7.7 Amp RoHS: Compliant

Vishay Siliconix IRLR120TRRPBF

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