Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRLR3105PBF
IRLR3105PBF

Infineon Technologies IRLR3105PBF

Part Number:
IRLR3105PBF
Manufacturer:
Infineon Technologies
Ventron No:
2853788-IRLR3105PBF
Description:
MOSFET N-CH 55V 25A DPAK
ECAD Model:
Datasheet:
IRLR3105PBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRLR3105PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3105PBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    37mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    25A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    57W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    57W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    37m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    710pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    25A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 5V
  • Rise Time
    57ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    37 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    25A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    55V
  • Dual Supply Voltage
    55V
  • Nominal Vgs
    3 V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.223mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLR3105PBF Description The IRLR3105PBF MOSFET makes use of tried-and-true silicon manufacturing techniques to provide designers with a wide range of devices to serve numerous applications, including battery-powered devices, DC motors, inverters, SMPS, lighting, load switches, and illumination. For ease of design, IRLR3105PBF is offered in a range of surface mount and through-hole packages with standardized industry footprints.
IRLR3105PBF Features Lead-Free
Fast Switching
Logic-Level Gate Drive
Advanced Process Technology
Ultra-Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
IRLR3105PBF Applications Switching high-power devices
Control speed of motors
LED dimmers or flashers
High-speed switching applications
Converters or inverter circuits
Microcontroller logic switching
IRLR3105PBF More Descriptions
IRLR3105PBF N-channel MOSFET Transistor, 25 A, 55 V, 3-Pin DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 55V, 25A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):37mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:25A; Junction to Case Thermal Resistance A:2.65°C/W; On State resistance @ Vgs = 10V:37mohm; Package / Case:DPAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Product Comparison
The three parts on the right have similar specifications to IRLR3105PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Recovery Time
    Surface Mount
    Terminal Position
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IRLR3105PBF
    IRLR3105PBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    37mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    GULL WING
    260
    25A
    30
    R-PSSO-G2
    1
    57W Tc
    Single
    ENHANCEMENT MODE
    57W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    37m Ω @ 15A, 10V
    3V @ 250μA
    710pF @ 25V
    25A Tc
    20nC @ 5V
    57ns
    5V 10V
    ±16V
    37 ns
    25 ns
    25A
    3V
    TO-252AA
    16V
    55V
    55V
    3 V
    2.39mm
    6.73mm
    6.223mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR2705TRRPBF
    IRLR2705TRRPBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    68W Tc
    Single
    -
    46W
    -
    8.9 ns
    N-Channel
    -
    40mOhm @ 17A, 10V
    2V @ 250μA
    880pF @ 25V
    28A Tc
    25nC @ 5V
    100ns
    4V 10V
    ±16V
    29 ns
    21 ns
    28A
    -
    -
    16V
    55V
    -
    -
    2.3876mm
    6.7056mm
    6.22mm
    -
    No
    RoHS Compliant
    -
    D-Pak
    175°C
    -55°C
    55V
    880pF
    65mOhm
    40 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLR3105PBF vs IRLR2705TRRPBF
  • IRLR2703PBF
    IRLR2703PBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    45mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    GULL WING
    260
    23A
    30
    R-PSSO-G2
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    38W
    DRAIN
    8.5 ns
    N-Channel
    SWITCHING
    45m Ω @ 14A, 10V
    1V @ 250μA
    450pF @ 25V
    23A Tc
    15nC @ 4.5V
    140ns
    4V 10V
    ±16V
    20 ns
    12 ns
    23A
    1V
    TO-252AA
    16V
    30V
    30V
    1 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    96A
    77 mJ
    97 ns
    -
    -
    -
    -
    -
    -
    -
    IRLR3105PBF vs IRLR2703PBF
  • IRLR3103
    IRLR3103
    Infineon Technologies
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    e0
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    30
    R-PSSO-G2
    1
    107W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    19m Ω @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    -
    4.5V 10V
    ±16V
    -
    -
    -
    -
    TO-252AA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    30V
    -
    -
    -
    220A
    240 mJ
    -
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    20A
    0.019Ohm
    30V
    IRLR3105PBF vs IRLR3103
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IRLR3105PBF
Popular Search Part Number Related Keywords Search Tags

Latest News

  • 17 October 2023

    IRFP250 Transistor Equivalent, Pin Configuration, Working Principle and More

    Ⅰ. Overview of IRFP250Ⅱ. Symbol, footprint and pin configuration of IRFP250Ⅲ. Technical parameters of IRFP250Ⅳ. What are the features of IRFP250?Ⅴ. Working principle of IRFP250Ⅵ. Applications of IRFP250Ⅶ....
  • 17 October 2023

    A Review of TDA2009A Dual Audio Power Amplifier

    Ⅰ. What is TDA2009A?Ⅱ. Symbol, footprint and pin configuration of TDA2009AⅢ. Technical parameters of TDA2009AⅣ. What are the features of TDA2009A?Ⅴ. How does the overheating protection circuit of...
  • 18 October 2023

    What Is CD4017BE CMOS Counter And How It Works?

    Ⅰ. Overview of CD4017BE counterⅡ. Symbol, footprint and pin configuration of CD4017BEⅢ. Technical parameters of CD4017BEⅣ. What are the features of CD4017BE?Ⅴ. How does CD4017BE work?Ⅵ. What are...
  • 18 October 2023

    Get to Know the MOC3063 Triac Driver

    Ⅰ. What is an optocoupler?Ⅱ. Overview of MOC3063 optocouplerⅢ. Symbol, footprint and pin configuration of MOC3063Ⅳ. Technical parameters of MOC3063Ⅴ. What are the features of MOC3063?Ⅵ. Working principle...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.