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Infineon Technologies IRLR3103TRR
- Part Number:
- IRLR3103TRR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853460-IRLR3103TRR
- Description:
- MOSFET N-CH 30V 55A DPAK
- ECAD Model:
-
- Datasheet:
- IRLR3103TRR
Infineon Technologies IRLR3103TRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3103TRR.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1998
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max107W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs19mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C55A Tc
- Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- RoHS StatusNon-RoHS Compliant
IRLR3103TRR Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1600pF @ 25V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRLR3103TRR Features
a 30V drain to source voltage (Vdss)
IRLR3103TRR Applications
There are a lot of Infineon Technologies
IRLR3103TRR applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1600pF @ 25V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRLR3103TRR Features
a 30V drain to source voltage (Vdss)
IRLR3103TRR Applications
There are a lot of Infineon Technologies
IRLR3103TRR applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRLR3103TRR More Descriptions
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
MOSFET N-CH 30V 55A DPAK
OEMs, CMs ONLY (NO BROKERS)
MOSFET N-CH 30V 55A DPAK
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to IRLR3103TRR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsMax Operating TemperatureMin Operating TemperatureNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageJEDEC-95 CodeDual Supply VoltageNominal VgsREACH SVHCLead FreeFactory Lead TimeView Compare
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IRLR3103TRRSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)MOSFET (Metal Oxide)107W TcN-Channel19mOhm @ 33A, 10V1V @ 250μA1600pF @ 25V55A Tc50nC @ 4.5V30V4.5V 10V±16VNon-RoHS Compliant---------------------------------------------- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~175°C TJTape & Reel (TR)HEXFET®2005Obsolete1 (Unlimited)MOSFET (Metal Oxide)68W TcN-Channel40mOhm @ 17A, 10V2V @ 250μA880pF @ 25V28A Tc25nC @ 5V55V4V 10V±16VRoHS CompliantSurface Mount3175°C-55°C1Single46W8.9 ns100ns29 ns21 ns28A16V55V880pF65mOhm40 mΩ2.3876mm6.7056mm6.22mmNo------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTubeHEXFET®2008Discontinued1 (Unlimited)MOSFET (Metal Oxide)57W TcN-Channel37m Ω @ 15A, 10V3V @ 250μA710pF @ 25V25A Tc20nC @ 5V-5V 10V±16VROHS3 CompliantSurface Mount3--1Single57W8 ns57ns37 ns25 ns25A16V55V---2.39mm6.73mm6.223mmNoSILICONe32EAR9937mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCEFET General Purpose Power55VGULL WING26025A30R-PSSO-G2ENHANCEMENT MODEDRAINSWITCHING3VTO-252AA55V3 VNo SVHCLead Free-
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)-2016Active1 (Unlimited)MOSFET (Metal Oxide)2.5W Ta 42W TcN-Channel100mOhm @ 8.4A, 5V2V @ 250μA870pF @ 25V14A Tc18nC @ 5V60V4V 5V±10VNon-RoHS CompliantSurface Mount2150°C-55°C-Single2.5W11 ns110ns41 ns23 ns14A10V60V870pF100mOhm100 mΩ---No--------60V--14A----------Contains Lead21 Weeks
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