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IRLR3103

Infineon Technologies IRLR3103

Part Number:
IRLR3103
Manufacturer:
Infineon Technologies
Ventron No:
2853657-IRLR3103
Description:
MOSFET N-CH 30V 55A DPAK
ECAD Model:
Datasheet:
IRLR3103

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Specifications
Infineon Technologies IRLR3103 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3103.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    1998
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    107W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    19m Ω @ 33A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    55A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • JEDEC-95 Code
    TO-252AA
  • Drain Current-Max (Abs) (ID)
    20A
  • Drain-source On Resistance-Max
    0.019Ohm
  • Pulsed Drain Current-Max (IDM)
    220A
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    240 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRLR3103 Description
IRLR3103 is a 30v HEXFET? Power MOSFET. The International Rectifier's logic level gate drive trench HEXFET? power MOSFET IRLR3103 features benchmark on-state resistance (RDS(on)) and high package current ratings for high power DC motors, power tools, industrial batteries and power supply applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRLR3103 is in the TO-252 package with 69W power dissipation.

IRLR3103 Features
Logic-Level Gate Drive
Ultra-Low On-Resistance
Surface Mount (IRLR3103)
Straight Lead (IRLU3103)
Advanced Process Technology
Fast SwitchinglFully Avalanche Rated

IRLR3103 Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits
Product Comparison
The three parts on the right have similar specifications to IRLR3103.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    Resistance
    Subcategory
    Voltage - Rated DC
    Current Rating
    Threshold Voltage
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    Lead Free
    Pbfree Code
    Reach Compliance Code
    Pin Count
    View Compare
  • IRLR3103
    IRLR3103
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    e0
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    245
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    107W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    19m Ω @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    30V
    4.5V 10V
    ±16V
    TO-252AA
    20A
    0.019Ohm
    220A
    30V
    240 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR2705TRRPBF
    IRLR2705TRRPBF
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    -
    68W Tc
    -
    -
    N-Channel
    -
    40mOhm @ 17A, 10V
    2V @ 250μA
    880pF @ 25V
    28A Tc
    25nC @ 5V
    55V
    4V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Surface Mount
    3
    D-Pak
    175°C
    -55°C
    Single
    46W
    8.9 ns
    100ns
    29 ns
    21 ns
    28A
    16V
    55V
    880pF
    65mOhm
    40 mΩ
    2.3876mm
    6.7056mm
    6.22mm
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLR3103 vs IRLR2705TRRPBF
  • IRLR3105PBF
    IRLR3105PBF
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    R-PSSO-G2
    -
    1
    -
    57W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    37m Ω @ 15A, 10V
    3V @ 250μA
    710pF @ 25V
    25A Tc
    20nC @ 5V
    -
    5V 10V
    ±16V
    TO-252AA
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    3
    -
    -
    -
    Single
    57W
    8 ns
    57ns
    37 ns
    25 ns
    25A
    16V
    55V
    -
    -
    -
    2.39mm
    6.73mm
    6.223mm
    No
    37mOhm
    FET General Purpose Power
    55V
    25A
    3V
    55V
    3 V
    No SVHC
    Lead Free
    -
    -
    -
    IRLR3103 vs IRLR3105PBF
  • IRLR130ATM
    IRLR130ATM
    Fairchild/ON Semiconductor
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    MATTE TIN
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta 46W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    120m Ω @ 6.5A, 5V
    2V @ 250μA
    755pF @ 25V
    13A Tc
    24nC @ 5V
    100V
    5V
    ±20V
    -
    13A
    0.12Ohm
    45A
    100V
    225 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    yes
    unknown
    3
    IRLR3103 vs IRLR130ATM
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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