Fairchild/ON Semiconductor IRLR130ATM

Name: IRLR130ATM
Brand: Fairchild/ON Semiconductor
SKU: 2852715-IRLR130ATM
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLR130ATM

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2852715-IRLR130ATM

Description:: MOSFET N-CH 100V 13A DPAK

ECAD Model:

Datasheet:: IRL(R,U)130A

Specifications

Fairchild/ON Semiconductor IRLR130ATM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor IRLR130ATM.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 46W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
120m Ω @ 6.5A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
755pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 5V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
13A
Drain-source On Resistance-Max
0.12Ohm
Pulsed Drain Current-Max (IDM)
45A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
225 mJ
RoHS Status
ROHS3 Compliant

Description

IRLR130ATM Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 225 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 755pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 13A.Peak drain current is 45A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (5V), this device contributes to a reduction in overall power consumption.

IRLR130ATM Features
the avalanche energy rating (Eas) is 225 mJ
based on its rated peak drain current 45A.
a 100V drain to source voltage (Vdss)

IRLR130ATM Applications
There are a lot of Rochester Electronics, LLC
IRLR130ATM applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IRLR130ATM More Descriptions

Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 13A Tc 2.5W Ta 46W Tc 100V -55C~150C TJ
MOSFETs 100V N-Channel a-FET Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):120mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:D-PAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRLR130ATM.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Series

Published

Subcategory

Supplier Device Package

Mount

Continuous Drain Current (ID)

Input Capacitance

Rds On Max

View Compare
IRLR130ATM

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta 46W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

120m Ω @ 6.5A, 5V

2V @ 250μA

755pF @ 25V

13A Tc

24nC @ 5V

100V

5V

±20V

13A

0.12Ohm

45A

100V

225 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
IRLR014NTRR

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

-

-55°C~175°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

Single

28W Tc

ENHANCEMENT MODE

-

N-Channel

-

140m Ω @ 6A, 10V

1V @ 250μA

265pF @ 25V

10A Tc

7.9nC @ 5V

55V

4.5V 10V

±16V

10A

-

-

-

-

Non-RoHS Compliant

HEXFET®

2001

FET General Purpose Power

-

-

-

-

-

IRLR130ATM vs IRLR014NTRR
IRLR3103TRR

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

107W Tc

-

-

N-Channel

-

19mOhm @ 33A, 10V

1V @ 250μA

1600pF @ 25V

55A Tc

50nC @ 4.5V

30V

4.5V 10V

±16V

-

-

-

-

-

Non-RoHS Compliant

HEXFET®

1998

-

D-Pak

-

-

-

-

IRLR130ATM vs IRLR3103TRR
IRLR024TRR

Vishay Siliconix

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

2.5W Ta 42W Tc

-

-

N-Channel

-

100mOhm @ 8.4A, 5V

2V @ 250μA

870pF @ 25V

14A Tc

18nC @ 5V

60V

4V 5V

±10V

-

-

-

-

-

Non-RoHS Compliant

-

1997

-

D-Pak

Surface Mount

14A

870pF

100 mΩ

IRLR130ATM vs IRLR024TRR