IRLR014NTRR

Infineon Technologies IRLR014NTRR

Part Number:
IRLR014NTRR
Manufacturer:
Infineon Technologies
Ventron No:
2853494-IRLR014NTRR
Description:
MOSFET N-CH 55V 10A DPAK
ECAD Model:
Datasheet:
IRLR014NTRR

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Specifications
Infineon Technologies IRLR014NTRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR014NTRR.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2001
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Configuration
    Single
  • Power Dissipation-Max
    28W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    140m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    265pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    10A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    7.9nC @ 5V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • Drain Current-Max (Abs) (ID)
    10A
  • RoHS Status
    Non-RoHS Compliant
Description
IRLR014NTRR Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 265pF @ 25V.10A is the drain current of this device, which is the maximum continuous current transistor can carry.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

IRLR014NTRR Features
a 55V drain to source voltage (Vdss)


IRLR014NTRR Applications
There are a lot of Infineon Technologies
IRLR014NTRR applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRLR014NTRR More Descriptions
MOSFET N-CH 55V 10A DPAK
Product Comparison
The three parts on the right have similar specifications to IRLR014NTRR.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Subcategory
    Technology
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    RoHS Status
    Mount
    Number of Pins
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Terminal Position
    Qualification Status
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Factory Lead Time
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRLR014NTRR
    IRLR014NTRR
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    Obsolete
    1 (Unlimited)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    Single
    28W Tc
    ENHANCEMENT MODE
    N-Channel
    140m Ω @ 6A, 10V
    1V @ 250μA
    265pF @ 25V
    10A Tc
    7.9nC @ 5V
    55V
    4.5V 10V
    ±16V
    10A
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR2703PBF
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Discontinued
    1 (Unlimited)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    45W Tc
    ENHANCEMENT MODE
    N-Channel
    45m Ω @ 14A, 10V
    1V @ 250μA
    450pF @ 25V
    23A Tc
    15nC @ 4.5V
    -
    4V 10V
    ±16V
    -
    ROHS3 Compliant
    Surface Mount
    3
    SILICON
    e3
    2
    EAR99
    45mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED
    30V
    GULL WING
    260
    23A
    30
    R-PSSO-G2
    1
    Single
    38W
    DRAIN
    8.5 ns
    SWITCHING
    140ns
    20 ns
    12 ns
    23A
    1V
    TO-252AA
    16V
    30V
    96A
    30V
    77 mJ
    97 ns
    1 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR3103
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    SINGLE WITH BUILT-IN DIODE
    107W Tc
    ENHANCEMENT MODE
    N-Channel
    19m Ω @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    30V
    4.5V 10V
    ±16V
    20A
    Non-RoHS Compliant
    -
    -
    SILICON
    e0
    2
    EAR99
    -
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    -
    GULL WING
    245
    -
    30
    R-PSSO-G2
    1
    -
    -
    DRAIN
    -
    SWITCHING
    -
    -
    -
    -
    -
    TO-252AA
    -
    -
    220A
    -
    240 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    SINGLE
    Not Qualified
    0.019Ohm
    30V
    -
    -
    -
    -
    -
    -
    -
  • IRLR024TR
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    Active
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    2.5W Ta 42W Tc
    -
    N-Channel
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    60V
    4V 5V
    ±10V
    -
    Non-RoHS Compliant
    Surface Mount
    2
    -
    -
    -
    -
    -
    -
    -
    60V
    -
    -
    14A
    -
    -
    -
    Single
    2.5W
    -
    11 ns
    -
    110ns
    41 ns
    23 ns
    14A
    -
    -
    10V
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
    Contains Lead
    -
    -
    -
    -
    21 Weeks
    D-Pak
    150°C
    -55°C
    870pF
    100mOhm
    100 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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