IRL3502SPBF

Infineon Technologies IRL3502SPBF

Part Number:
IRL3502SPBF
Manufacturer:
Infineon Technologies
Ventron No:
2853731-IRL3502SPBF
Description:
MOSFET N-CH 20V 110A D2PAK
ECAD Model:
Datasheet:
IRL3502SPbF

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Specifications
Infineon Technologies IRL3502SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3502SPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2003
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    110A
  • Power Dissipation-Max
    140W Tc
  • Element Configuration
    Single
  • Power Dissipation
    140W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    7mOhm @ 64A, 7V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4700pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    110A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 4.5V
  • Rise Time
    140ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 7V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    130 ns
  • Turn-Off Delay Time
    96 ns
  • Continuous Drain Current (ID)
    110A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance
    4.7nF
  • Drain to Source Resistance
    7mOhm
  • Rds On Max
    7 mΩ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRL3502SPBF Overview
The maximum input capacitance of this device is 4700pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 110A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 96 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 7mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 7V), this device helps reduce its power consumption.

IRL3502SPBF Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 96 ns
single MOSFETs transistor is 7mOhm
a 20V drain to source voltage (Vdss)


IRL3502SPBF Applications
There are a lot of Infineon Technologies
IRL3502SPBF applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRL3502SPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.008Ohm;ID 110A;D2Pak;PD 140W;VGS /-10V
Trans MOSFET N-CH 20V 110A 3-Pin(2 Tab) D2PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:7V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 20V, 110A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:110A; Resistance, Rds On:0.007ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:420A; Power Dissipation:140W; Power, Pd:140W; Resistance, Rds on @ Vgs = 10V:0.007ohm; Thermal Resistance, Junction to Case A:0.89°C/W; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Min:0.70V
Product Comparison
The three parts on the right have similar specifications to IRL3502SPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRL3502SPBF
    IRL3502SPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    -55°C~150°C TJ
    Tube
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    20V
    MOSFET (Metal Oxide)
    110A
    140W Tc
    Single
    140W
    10 ns
    N-Channel
    7mOhm @ 64A, 7V
    700mV @ 250μA
    4700pF @ 15V
    110A Tc
    110nC @ 4.5V
    140ns
    20V
    4.5V 7V
    ±10V
    130 ns
    96 ns
    110A
    10V
    20V
    4.7nF
    7mOhm
    7 mΩ
    4.83mm
    10.67mm
    9.65mm
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL3202S
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tube
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    69W Tc
    -
    -
    -
    N-Channel
    16m Ω @ 29A, 7V
    700mV @ 250μA
    2000pF @ 15V
    48A Tc
    43nC @ 4.5V
    -
    20V
    4.5V 7V
    ±10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    e3
    2
    EAR99
    MATTE TIN OVER NICKEL
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    48A
    0.019Ohm
    190A
    20V
    270 mJ
  • IRL3303L
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    TO-262
    -55°C~175°C TJ
    Tube
    HEXFET®
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    3.8W Ta 68W Tc
    -
    -
    -
    N-Channel
    26mOhm @ 20A, 10V
    1V @ 250μA
    870pF @ 25V
    38A Tc
    26nC @ 4.5V
    -
    30V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL3103L
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2002
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    94W Tc
    -
    -
    -
    N-Channel
    12m Ω @ 34A, 10V
    1V @ 250μA
    1650pF @ 25V
    64A Tc
    33nC @ 4.5V
    -
    30V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    EAR99
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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