Infineon Technologies IRL3502SPBF
- Part Number:
- IRL3502SPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853731-IRL3502SPBF
- Description:
- MOSFET N-CH 20V 110A D2PAK
- Datasheet:
- IRL3502SPbF
Infineon Technologies IRL3502SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3502SPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Current Rating110A
- Power Dissipation-Max140W Tc
- Element ConfigurationSingle
- Power Dissipation140W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7mOhm @ 64A, 7V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4700pF @ 15V
- Current - Continuous Drain (Id) @ 25°C110A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 4.5V
- Rise Time140ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 7V
- Vgs (Max)±10V
- Fall Time (Typ)130 ns
- Turn-Off Delay Time96 ns
- Continuous Drain Current (ID)110A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage20V
- Input Capacitance4.7nF
- Drain to Source Resistance7mOhm
- Rds On Max7 mΩ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRL3502SPBF Overview
The maximum input capacitance of this device is 4700pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 110A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 96 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 7mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 7V), this device helps reduce its power consumption.
IRL3502SPBF Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 96 ns
single MOSFETs transistor is 7mOhm
a 20V drain to source voltage (Vdss)
IRL3502SPBF Applications
There are a lot of Infineon Technologies
IRL3502SPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 4700pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 110A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 96 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 7mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 7V), this device helps reduce its power consumption.
IRL3502SPBF Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 96 ns
single MOSFETs transistor is 7mOhm
a 20V drain to source voltage (Vdss)
IRL3502SPBF Applications
There are a lot of Infineon Technologies
IRL3502SPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRL3502SPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.008Ohm;ID 110A;D2Pak;PD 140W;VGS /-10V
Trans MOSFET N-CH 20V 110A 3-Pin(2 Tab) D2PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:7V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 20V, 110A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:110A; Resistance, Rds On:0.007ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:420A; Power Dissipation:140W; Power, Pd:140W; Resistance, Rds on @ Vgs = 10V:0.007ohm; Thermal Resistance, Junction to Case A:0.89°C/W; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Min:0.70V
Trans MOSFET N-CH 20V 110A 3-Pin(2 Tab) D2PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:7V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 20V, 110A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:110A; Resistance, Rds On:0.007ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:420A; Power Dissipation:140W; Power, Pd:140W; Resistance, Rds on @ Vgs = 10V:0.007ohm; Thermal Resistance, Junction to Case A:0.89°C/W; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Min:0.70V
The three parts on the right have similar specifications to IRL3502SPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRL3502SPBFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)150°C-55°C20VMOSFET (Metal Oxide)110A140W TcSingle140W10 nsN-Channel7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V140ns20V4.5V 7V±10V130 ns96 ns110A10V20V4.7nF7mOhm7 mΩ4.83mm10.67mm9.65mmNoRoHS CompliantLead Free------------------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTubeHEXFET®1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-69W Tc---N-Channel16m Ω @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V-20V4.5V 7V±10V------------Non-RoHS Compliant-YESSILICONe32EAR99MATTE TIN OVER NICKELFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING48A0.019Ohm190A20V270 mJ
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-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-TO-262-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-3.8W Ta 68W Tc---N-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V-30V4.5V 10V±16V------------Non-RoHS Compliant------------------------
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-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®2002Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-94W Tc---N-Channel12m Ω @ 34A, 10V1V @ 250μA1650pF @ 25V64A Tc33nC @ 4.5V-30V4.5V 10V±16V------------Non-RoHS Compliant-----EAR99------------------
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