Infineon Technologies IRL3103L
- Part Number:
- IRL3103L
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853688-IRL3103L
- Description:
- MOSFET N-CH 30V 64A TO-262
- ECAD Model:
-
- Datasheet:
- IRL3103L
Infineon Technologies IRL3103L technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3103L.
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2002
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max94W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs12m Ω @ 34A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1650pF @ 25V
- Current - Continuous Drain (Id) @ 25°C64A Tc
- Gate Charge (Qg) (Max) @ Vgs33nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- RoHS StatusNon-RoHS Compliant
IRL3103L Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1650pF @ 25V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRL3103L Features
a 30V drain to source voltage (Vdss)
IRL3103L Applications
There are a lot of Infineon Technologies
IRL3103L applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1650pF @ 25V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRL3103L Features
a 30V drain to source voltage (Vdss)
IRL3103L Applications
There are a lot of Infineon Technologies
IRL3103L applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRL3103L More Descriptions
MOSFET, 30V, 64A, 12 mOhm, 22 nC Qg, Logic Level, TO-262
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:64A; On-Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262; Drain Source On Resistance @ 10V:12mohm RoHS Compliant: No
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:64A; On-Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262; Drain Source On Resistance @ 10V:12mohm RoHS Compliant: No
The three parts on the right have similar specifications to IRL3103L.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCLead FreeRadiation HardeningSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRL3103LThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTubeHEXFET®2002Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)94W TcN-Channel12m Ω @ 34A, 10V1V @ 250μA1650pF @ 25V64A Tc33nC @ 4.5V30V4.5V 10V±16VNon-RoHS Compliant-------------------------------------------------- -
Through HoleTO-220-3-55°C~150°C TJTubeHEXFET®2004Obsolete1 (Unlimited)-MOSFET (Metal Oxide)69W TcN-Channel16mOhm @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V20V4.5V 7V±10VRoHS CompliantThrough Hole3TO-220AB150°C-55°C20V48ASingle69W8.5 ns100ns82 ns12 ns48A10V20V2nF100 ns19mOhm16 mΩ700 mV15.24mm10.5156mm4.69mmNo SVHCLead Free-----------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)-MOSFET (Metal Oxide)140W TcN-Channel7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V20V4.5V 7V±10VRoHS CompliantSurface Mount3D2PAK150°C-55°C20V110ASingle140W10 ns140ns130 ns96 ns110A10V20V4.7nF-7mOhm7 mΩ-4.83mm10.67mm9.65mm-Lead FreeNo----------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTubeHEXFET®1998Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)69W TcN-Channel16m Ω @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V20V4.5V 7V±10VNon-RoHS Compliant---------------------------YESSILICONe32MATTE TIN OVER NICKELFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING48A0.019Ohm190A20V270 mJ
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