Infineon Technologies IRL3103D1STRLP
- Part Number:
- IRL3103D1STRLP
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853996-IRL3103D1STRLP
- Description:
- MOSFET N-CH 30V 64A D2PAK
- ECAD Model:
-
- Datasheet:
- IRL3103D1STRLP
Infineon Technologies IRL3103D1STRLP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3103D1STRLP.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesFETKY™
- Published2006
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max3.1W Ta 89W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs14mOhm @ 34A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C64A Tc
- Gate Charge (Qg) (Max) @ Vgs43nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
IRL3103D1STRLP Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1900pF @ 25V maximal input capacitance.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRL3103D1STRLP Features
a 30V drain to source voltage (Vdss)
IRL3103D1STRLP Applications
There are a lot of Infineon Technologies
IRL3103D1STRLP applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1900pF @ 25V maximal input capacitance.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRL3103D1STRLP Features
a 30V drain to source voltage (Vdss)
IRL3103D1STRLP Applications
There are a lot of Infineon Technologies
IRL3103D1STRLP applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRL3103D1STRLP More Descriptions
MOSFET N-CH 30V 64A D2PAK
The three parts on the right have similar specifications to IRL3103D1STRLP.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Surface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusView Compare
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IRL3103D1STRLPSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~150°C TJTape & Reel (TR)FETKY™2006Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.1W Ta 89W TcN-Channel14mOhm @ 34A, 10V1V @ 250μA1900pF @ 25V64A Tc43nC @ 4.5V30V4.5V 10V±16V------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~150°C TJTubeHEXFET®1998Obsolete1 (Unlimited)MOSFET (Metal Oxide)69W TcN-Channel16m Ω @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V20V4.5V 7V±10VYESSILICONe32EAR99MATTE TIN OVER NICKELFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING48A0.019Ohm190A20V270 mJNon-RoHS Compliant
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AATO-262-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 68W TcN-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V30V4.5V 10V±16V-----------------------Non-RoHS Compliant
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA--55°C~175°C TJTubeHEXFET®2002Obsolete1 (Unlimited)MOSFET (Metal Oxide)94W TcN-Channel12m Ω @ 34A, 10V1V @ 250μA1650pF @ 25V64A Tc33nC @ 4.5V30V4.5V 10V±16V----EAR99------------------Non-RoHS Compliant
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