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IRL3502PBF

Infineon Technologies IRL3502PBF

Part Number:
IRL3502PBF
Manufacturer:
Infineon Technologies
Ventron No:
2853824-IRL3502PBF
Description:
MOSFET N-CH 20V 110A TO-220AB
ECAD Model:
Datasheet:
IRL3502PbF

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Specifications
Infineon Technologies IRL3502PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3502PBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2003
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    110A
  • Number of Elements
    1
  • Power Dissipation-Max
    140W Tc
  • Element Configuration
    Single
  • Power Dissipation
    140W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    7mOhm @ 64A, 7V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4700pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    110A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 4.5V
  • Rise Time
    140ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 7V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    130 ns
  • Turn-Off Delay Time
    96 ns
  • Continuous Drain Current (ID)
    110A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance
    4.7nF
  • Drain to Source Resistance
    8mOhm
  • Rds On Max
    7 mΩ
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRL3502PBF Description
IRL3502PBF is a 20v HEXFET? Power MOSFET. The HEXFET Power MOSFET IRL3502PBF was designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.

IRL3502PBF Features
Advanced Process Technology
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching

IRL3502PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits
IRL3502PBF More Descriptions
MOSFET, 20V, 110A, 8 MOHM, 73.3 NC QG, LOGIC LEVEL, TO-220AB
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Trans MOSFET N-CH 20V 110A 3-Pin(3 Tab) TO-220AB
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:20V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:7V; Threshold Voltage Vgs Typ:700mV; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:110A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:420A; Termination Type:Through Hole; Transistor Type:; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:700mV
Product Comparison
The three parts on the right have similar specifications to IRL3502PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRL3502PBF
    IRL3502PBF
    Infineon Technologies
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    -55°C~150°C TJ
    Tube
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    20V
    MOSFET (Metal Oxide)
    110A
    1
    140W Tc
    Single
    140W
    10 ns
    N-Channel
    7mOhm @ 64A, 7V
    700mV @ 250μA
    4700pF @ 15V
    110A Tc
    110nC @ 4.5V
    140ns
    20V
    4.5V 7V
    ±10V
    130 ns
    96 ns
    110A
    10V
    20V
    4.7nF
    8mOhm
    7 mΩ
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL3303STRRPBF
    IRL3303STRRPBF
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.8W Ta 68W Tc
    -
    -
    -
    N-Channel
    26m Ω @ 20A, 10V
    1V @ 250μA
    870pF @ 25V
    38A Tc
    26nC @ 4.5V
    -
    30V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRL3502PBF vs IRL3303STRRPBF
  • IRL3202PBF
    IRL3202PBF
    Infineon Technologies
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    -55°C~150°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    20V
    MOSFET (Metal Oxide)
    48A
    -
    69W Tc
    Single
    69W
    8.5 ns
    N-Channel
    16mOhm @ 29A, 7V
    700mV @ 250μA
    2000pF @ 15V
    48A Tc
    43nC @ 4.5V
    100ns
    20V
    4.5V 7V
    ±10V
    82 ns
    12 ns
    48A
    10V
    20V
    2nF
    19mOhm
    16 mΩ
    -
    RoHS Compliant
    Lead Free
    100 ns
    700 mV
    15.24mm
    10.5156mm
    4.69mm
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRL3502PBF vs IRL3202PBF
  • IRL3202S
    IRL3202S
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tube
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    69W Tc
    -
    -
    -
    N-Channel
    16m Ω @ 29A, 7V
    700mV @ 250μA
    2000pF @ 15V
    48A Tc
    43nC @ 4.5V
    -
    20V
    4.5V 7V
    ±10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    YES
    SILICON
    e3
    2
    EAR99
    MATTE TIN OVER NICKEL
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    48A
    0.019Ohm
    190A
    20V
    270 mJ
    IRL3502PBF vs IRL3202S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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