Infineon Technologies IRL3303STRRPBF

Name: IRL3303STRRPBF
Brand: Infineon Technologies
SKU: 2853976-IRL3303STRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3303STRRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2853976-IRL3303STRRPBF

Description:: MOSFET N-CH 30V 38A D2PAK

ECAD Model:

Datasheet:: IRL3303(L,S)PbF

Specifications

Infineon Technologies IRL3303STRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3303STRRPBF.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
3.8W Ta 68W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
26m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
870pF @ 25V
Current - Continuous Drain (Id) @ 25°C
38A Tc
Gate Charge (Qg) (Max) @ Vgs
26nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V

Description

IRL3303STRRPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 870pF @ 25V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRL3303STRRPBF Features
a 30V drain to source voltage (Vdss)

IRL3303STRRPBF Applications
There are a lot of Infineon Technologies
IRL3303STRRPBF applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IRL3303STRRPBF More Descriptions

MOSFET N-CH 30V 38A D2PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:38A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRL3303STRRPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

View Compare
IRL3303STRRPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

3.8W Ta 68W Tc

N-Channel

26m Ω @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

30V

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL3202S

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~150°C TJ

Tube

HEXFET®

1998

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

69W Tc

N-Channel

16m Ω @ 29A, 7V

700mV @ 250μA

2000pF @ 15V

48A Tc

43nC @ 4.5V

20V

4.5V 7V

±10V

YES

SILICON

e3

2

EAR99

MATTE TIN OVER NICKEL

FET General Purpose Power

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

48A

0.019Ohm

190A

20V

270 mJ

Non-RoHS Compliant

-

IRL3303STRRPBF vs IRL3202S
IRL3303L

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-55°C~175°C TJ

Tube

HEXFET®

1997

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

3.8W Ta 68W Tc

N-Channel

26mOhm @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

30V

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

TO-262

IRL3303STRRPBF vs IRL3303L
IRL3103L

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-55°C~175°C TJ

Tube

HEXFET®

2002

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

94W Tc

N-Channel

12m Ω @ 34A, 10V

1V @ 250μA

1650pF @ 25V

64A Tc

33nC @ 4.5V

30V

4.5V 10V

±16V

-

-

-

-

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

IRL3303STRRPBF vs IRL3103L