Infineon Technologies IRL3202PBF
- Part Number:
- IRL3202PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853732-IRL3202PBF
- Description:
- MOSFET N-CH 20V 48A TO-220AB
- Datasheet:
- IRL3202PbF
Infineon Technologies IRL3202PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3202PBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Current Rating48A
- Power Dissipation-Max69W Tc
- Element ConfigurationSingle
- Power Dissipation69W
- Turn On Delay Time8.5 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs16mOhm @ 29A, 7V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2000pF @ 15V
- Current - Continuous Drain (Id) @ 25°C48A Tc
- Gate Charge (Qg) (Max) @ Vgs43nC @ 4.5V
- Rise Time100ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 7V
- Vgs (Max)±10V
- Fall Time (Typ)82 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)48A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage20V
- Input Capacitance2nF
- Recovery Time100 ns
- Drain to Source Resistance19mOhm
- Rds On Max16 mΩ
- Nominal Vgs700 mV
- Height15.24mm
- Length10.5156mm
- Width4.69mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRL3202PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2000pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 48A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 12 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 19mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (4.5V 7V), this device helps reduce its overall power consumption.
IRL3202PBF Features
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 19mOhm
a 20V drain to source voltage (Vdss)
IRL3202PBF Applications
There are a lot of Infineon Technologies
IRL3202PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2000pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 48A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 12 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 19mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (4.5V 7V), this device helps reduce its overall power consumption.
IRL3202PBF Features
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 19mOhm
a 20V drain to source voltage (Vdss)
IRL3202PBF Applications
There are a lot of Infineon Technologies
IRL3202PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRL3202PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID 48A;TO-220AB;PD 69W;VGS /-10V
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 69 W
Trans MOSFET N-CH 20V 48A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 48A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:48A; On Resistance, Rds(on):16mohm; Rds(on) Test Voltage, Vgs:7V; Package/Case:TO-220AB ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:48A; Resistance, Rds On:16mohm; Voltage, Vgs Rds on Measurement:7V; Voltage, Vgs th Typ:0.7V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:190A; Power, Pd:69W; SMD Marking:IRL3202PBF; Voltage, Vds Max:20V
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 69 W
Trans MOSFET N-CH 20V 48A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 48A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:48A; On Resistance, Rds(on):16mohm; Rds(on) Test Voltage, Vgs:7V; Package/Case:TO-220AB ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:48A; Resistance, Rds On:16mohm; Voltage, Vgs Rds on Measurement:7V; Voltage, Vgs th Typ:0.7V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:190A; Power, Pd:69W; SMD Marking:IRL3202PBF; Voltage, Vds Max:20V
The three parts on the right have similar specifications to IRL3202PBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeTerminationResistanceLead PitchThreshold VoltageDual Supply VoltageRadiation HardeningView Compare
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IRL3202PBFThrough HoleThrough HoleTO-220-33TO-220AB-55°C~150°C TJTubeHEXFET®2004Obsolete1 (Unlimited)150°C-55°C20VMOSFET (Metal Oxide)48A69W TcSingle69W8.5 nsN-Channel16mOhm @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V100ns20V4.5V 7V±10V82 ns12 ns48A10V20V2nF100 ns19mOhm16 mΩ700 mV15.24mm10.5156mm4.69mmNo SVHCRoHS CompliantLead Free-------
-
Through HoleThrough HoleTO-220-33TO-220AB-55°C~175°C TJTubeHEXFET®2003Obsolete1 (Unlimited)175°C-55°C30VMOSFET (Metal Oxide)34A68W TcSingle56W7.4 nsN-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V200ns30V4.5V 10V±16V36 ns14 ns38A16V30V870pF-40mOhm26 mΩ1 V15.24mm10.5156mm4.69mmNo SVHCRoHS CompliantLead FreeThrough Hole26MOhm2.54mm1V30V-
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)150°C-55°C20VMOSFET (Metal Oxide)110A140W TcSingle140W10 nsN-Channel7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V140ns20V4.5V 7V±10V130 ns96 ns110A10V20V4.7nF-7mOhm7 mΩ-4.83mm10.67mm9.65mm-RoHS CompliantLead Free-----No
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-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-TO-262-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-3.8W Ta 68W Tc---N-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V-30V4.5V 10V±16V--------------Non-RoHS Compliant-------
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