IRL3202PBF

Infineon Technologies IRL3202PBF

Part Number:
IRL3202PBF
Manufacturer:
Infineon Technologies
Ventron No:
2853732-IRL3202PBF
Description:
MOSFET N-CH 20V 48A TO-220AB
ECAD Model:
Datasheet:
IRL3202PbF

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Specifications
Infineon Technologies IRL3202PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3202PBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    48A
  • Power Dissipation-Max
    69W Tc
  • Element Configuration
    Single
  • Power Dissipation
    69W
  • Turn On Delay Time
    8.5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    16mOhm @ 29A, 7V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2000pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    48A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    43nC @ 4.5V
  • Rise Time
    100ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 7V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    82 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    48A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance
    2nF
  • Recovery Time
    100 ns
  • Drain to Source Resistance
    19mOhm
  • Rds On Max
    16 mΩ
  • Nominal Vgs
    700 mV
  • Height
    15.24mm
  • Length
    10.5156mm
  • Width
    4.69mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRL3202PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2000pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 48A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 12 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 19mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (4.5V 7V), this device helps reduce its overall power consumption.

IRL3202PBF Features
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 19mOhm
a 20V drain to source voltage (Vdss)


IRL3202PBF Applications
There are a lot of Infineon Technologies
IRL3202PBF applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRL3202PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID 48A;TO-220AB;PD 69W;VGS /-10V
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 69 W
Trans MOSFET N-CH 20V 48A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 48A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:48A; On Resistance, Rds(on):16mohm; Rds(on) Test Voltage, Vgs:7V; Package/Case:TO-220AB ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:48A; Resistance, Rds On:16mohm; Voltage, Vgs Rds on Measurement:7V; Voltage, Vgs th Typ:0.7V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:190A; Power, Pd:69W; SMD Marking:IRL3202PBF; Voltage, Vds Max:20V
Product Comparison
The three parts on the right have similar specifications to IRL3202PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Termination
    Resistance
    Lead Pitch
    Threshold Voltage
    Dual Supply Voltage
    Radiation Hardening
    View Compare
  • IRL3202PBF
    IRL3202PBF
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    -55°C~150°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    20V
    MOSFET (Metal Oxide)
    48A
    69W Tc
    Single
    69W
    8.5 ns
    N-Channel
    16mOhm @ 29A, 7V
    700mV @ 250μA
    2000pF @ 15V
    48A Tc
    43nC @ 4.5V
    100ns
    20V
    4.5V 7V
    ±10V
    82 ns
    12 ns
    48A
    10V
    20V
    2nF
    100 ns
    19mOhm
    16 mΩ
    700 mV
    15.24mm
    10.5156mm
    4.69mm
    No SVHC
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • IRL3303PBF
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    30V
    MOSFET (Metal Oxide)
    34A
    68W Tc
    Single
    56W
    7.4 ns
    N-Channel
    26mOhm @ 20A, 10V
    1V @ 250μA
    870pF @ 25V
    38A Tc
    26nC @ 4.5V
    200ns
    30V
    4.5V 10V
    ±16V
    36 ns
    14 ns
    38A
    16V
    30V
    870pF
    -
    40mOhm
    26 mΩ
    1 V
    15.24mm
    10.5156mm
    4.69mm
    No SVHC
    RoHS Compliant
    Lead Free
    Through Hole
    26MOhm
    2.54mm
    1V
    30V
    -
  • IRL3502SPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    -55°C~150°C TJ
    Tube
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    20V
    MOSFET (Metal Oxide)
    110A
    140W Tc
    Single
    140W
    10 ns
    N-Channel
    7mOhm @ 64A, 7V
    700mV @ 250μA
    4700pF @ 15V
    110A Tc
    110nC @ 4.5V
    140ns
    20V
    4.5V 7V
    ±10V
    130 ns
    96 ns
    110A
    10V
    20V
    4.7nF
    -
    7mOhm
    7 mΩ
    -
    4.83mm
    10.67mm
    9.65mm
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    No
  • IRL3303L
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    TO-262
    -55°C~175°C TJ
    Tube
    HEXFET®
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    3.8W Ta 68W Tc
    -
    -
    -
    N-Channel
    26mOhm @ 20A, 10V
    1V @ 250μA
    870pF @ 25V
    38A Tc
    26nC @ 4.5V
    -
    30V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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