Infineon Technologies IRL3303PBF

Name: IRL3303PBF
Brand: Infineon Technologies
SKU: 2853864-IRL3303PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3303PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2853864-IRL3303PBF

Description:: MOSFET N-CH 30V 38A TO-220AB

ECAD Model:

Datasheet:: IRL3303PbF

Specifications

Infineon Technologies IRL3303PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3303PBF.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Resistance
26MOhm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
34A
Lead Pitch
2.54mm
Power Dissipation-Max
68W Tc
Element Configuration
Single
Power Dissipation
56W
Turn On Delay Time
7.4 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
870pF @ 25V
Current - Continuous Drain (Id) @ 25°C
38A Tc
Gate Charge (Qg) (Max) @ Vgs
26nC @ 4.5V
Rise Time
200ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
36 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
38A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Input Capacitance
870pF
Drain to Source Resistance
40mOhm
Rds On Max
26 mΩ
Nominal Vgs
1 V
Height
15.24mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IRL3303PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 870pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 14 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 40mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

IRL3303PBF Features
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 40mOhm
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)

IRL3303PBF Applications
There are a lot of Infineon Technologies
IRL3303PBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRL3303PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.026Ohm;ID 38A;TO-220AB;PD 68W;VGS /-16V
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Trans MOSFET N-CH 30V 38A 3-Pin(3 Tab) TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:38A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
MOSFET, N, 30V, 34A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:30V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:56W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:38A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:56W; Power Dissipation Pd:56W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

Product Comparison

The three parts on the right have similar specifications to IRL3303PBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Termination

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Lead Pitch

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Radiation Hardening

Recovery Time

View Compare
IRL3303PBF

Infineon Technologies

Through Hole

Through Hole

TO-220-3

3

TO-220AB

-55°C~175°C TJ

Tube

HEXFET®

2003

Obsolete

1 (Unlimited)

Through Hole

26MOhm

175°C

-55°C

30V

MOSFET (Metal Oxide)

34A

2.54mm

68W Tc

Single

56W

7.4 ns

N-Channel

26mOhm @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

200ns

30V

4.5V 10V

±16V

36 ns

14 ns

38A

1V

16V

30V

30V

870pF

40mOhm

26 mΩ

1 V

15.24mm

10.5156mm

4.69mm

No SVHC

RoHS Compliant

Lead Free

-

-

-
IRL3303STRRPBF

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

3.8W Ta 68W Tc

-

-

-

N-Channel

26m Ω @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

-

30V

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL3303PBF vs IRL3303STRRPBF
IRL3303SPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

D2PAK

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

175°C

-55°C

30V

MOSFET (Metal Oxide)

38A

-

3.8W Ta 68W Tc

Single

68W

7.4 ns

N-Channel

26mOhm @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

200ns

30V

4.5V 10V

±16V

36 ns

14 ns

38A

-

16V

30V

-

870pF

40mOhm

26 mΩ

-

4.572mm

10.668mm

9.65mm

-

RoHS Compliant

Lead Free

No

-

IRL3303PBF vs IRL3303SPBF
IRL3202PBF

Infineon Technologies

Through Hole

Through Hole

TO-220-3

3

TO-220AB

-55°C~150°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

150°C

-55°C

20V

MOSFET (Metal Oxide)

48A

-

69W Tc

Single

69W

8.5 ns

N-Channel

16mOhm @ 29A, 7V

700mV @ 250μA

2000pF @ 15V

48A Tc

43nC @ 4.5V

100ns

20V

4.5V 7V

±10V

82 ns

12 ns

48A

-

10V

20V

-

2nF

19mOhm

16 mΩ

700 mV

15.24mm

10.5156mm

4.69mm

No SVHC

RoHS Compliant

Lead Free

-

100 ns

IRL3303PBF vs IRL3202PBF

Certification

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IRL3303~~(15)~~
IRL330~~(22)~~
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IRL3~~(56)~~
IRL~~(58)~~

Part Number	Manufacturers	Description	Price
IRL3303PBF DISTI #IRL3303PBF	Infineon Technologies AG	MOSFET N-CH 30V 38A TO-220AB RoHS: Compliant
IRL3303PBF DISTI #IRL3303PBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 0.026Oh RoHS: Compliant	1 $1.63 2 $1.597 5 $1.549 10 $1.483 25 $1.386
IRL3303PBF DISTI #IRL3303PBF	Infineon Technologies AG	MOSFET MOSFT 30V 34A 17.3nC 26mOhm LogLvAB RoHS: Compliant
IRL3303PBF DISTI #IRL3303PBF	Infineon Technologies AG	MOSFET, N, 30V, 34A, TO-220 RoHS: Compliant	1 $2.93 10 $1.47 100 $1.24 500 $1.17 1000 $1.1 2500 $1.01 10000 $0.962

Infineon Technologies IRL3303PBF

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