Infineon Technologies IRL3303SPBF
- Part Number:
- IRL3303SPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853860-IRL3303SPBF
- Description:
- MOSFET N-CH 30V 38A D2PAK
- Datasheet:
- IRL3303(L,S)PbF
Infineon Technologies IRL3303SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3303SPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Current Rating38A
- Power Dissipation-Max3.8W Ta 68W Tc
- Element ConfigurationSingle
- Power Dissipation68W
- Turn On Delay Time7.4 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs26mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C38A Tc
- Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
- Rise Time200ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)36 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)38A
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage30V
- Input Capacitance870pF
- Drain to Source Resistance40mOhm
- Rds On Max26 mΩ
- Height4.572mm
- Length10.668mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRL3303SPBF Overview
A device's maximal input capacitance is 870pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 38A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 14 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 40mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRL3303SPBF Features
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 40mOhm
a 30V drain to source voltage (Vdss)
IRL3303SPBF Applications
There are a lot of Infineon Technologies
IRL3303SPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 870pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 38A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 14 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 40mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRL3303SPBF Features
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 40mOhm
a 30V drain to source voltage (Vdss)
IRL3303SPBF Applications
There are a lot of Infineon Technologies
IRL3303SPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRL3303SPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.026Ohm;ID 38A;D2Pak;PD 68W;VGS /-16V;-55d
Trans MOSFET N-CH 30V 38A 3-Pin(2 Tab) D2PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:38A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
Trans MOSFET N-CH 30V 38A 3-Pin(2 Tab) D2PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:38A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRL3303SPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeECCN CodeView Compare
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IRL3303SPBFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)175°C-55°C30VMOSFET (Metal Oxide)38A3.8W Ta 68W TcSingle68W7.4 nsN-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V200ns30V4.5V 10V±16V36 ns14 ns38A16V30V870pF40mOhm26 mΩ4.572mm10.668mm9.65mmNoRoHS CompliantLead Free--
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)150°C-55°C20VMOSFET (Metal Oxide)110A140W TcSingle140W10 nsN-Channel7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V140ns20V4.5V 7V±10V130 ns96 ns110A10V20V4.7nF7mOhm7 mΩ4.83mm10.67mm9.65mmNoRoHS CompliantLead Free-
-
-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-TO-262-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-3.8W Ta 68W Tc---N-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V-30V4.5V 10V±16V------------Non-RoHS Compliant--
-
-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®2002Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-94W Tc---N-Channel12m Ω @ 34A, 10V1V @ 250μA1650pF @ 25V64A Tc33nC @ 4.5V-30V4.5V 10V±16V------------Non-RoHS Compliant-EAR99
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