IRL3303SPBF

Infineon Technologies IRL3303SPBF

Part Number:
IRL3303SPBF
Manufacturer:
Infineon Technologies
Ventron No:
2853860-IRL3303SPBF
Description:
MOSFET N-CH 30V 38A D2PAK
ECAD Model:
Datasheet:
IRL3303(L,S)PbF

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Specifications
Infineon Technologies IRL3303SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3303SPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    38A
  • Power Dissipation-Max
    3.8W Ta 68W Tc
  • Element Configuration
    Single
  • Power Dissipation
    68W
  • Turn On Delay Time
    7.4 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    26mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    870pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    38A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 4.5V
  • Rise Time
    200ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    36 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    38A
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance
    870pF
  • Drain to Source Resistance
    40mOhm
  • Rds On Max
    26 mΩ
  • Height
    4.572mm
  • Length
    10.668mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRL3303SPBF Overview
A device's maximal input capacitance is 870pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 38A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 14 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 40mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRL3303SPBF Features
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 40mOhm
a 30V drain to source voltage (Vdss)


IRL3303SPBF Applications
There are a lot of Infineon Technologies
IRL3303SPBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRL3303SPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.026Ohm;ID 38A;D2Pak;PD 68W;VGS /-16V;-55d
Trans MOSFET N-CH 30V 38A 3-Pin(2 Tab) D2PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:38A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRL3303SPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    ECCN Code
    View Compare
  • IRL3303SPBF
    IRL3303SPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    30V
    MOSFET (Metal Oxide)
    38A
    3.8W Ta 68W Tc
    Single
    68W
    7.4 ns
    N-Channel
    26mOhm @ 20A, 10V
    1V @ 250μA
    870pF @ 25V
    38A Tc
    26nC @ 4.5V
    200ns
    30V
    4.5V 10V
    ±16V
    36 ns
    14 ns
    38A
    16V
    30V
    870pF
    40mOhm
    26 mΩ
    4.572mm
    10.668mm
    9.65mm
    No
    RoHS Compliant
    Lead Free
    -
    -
  • IRL3502SPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    -55°C~150°C TJ
    Tube
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    20V
    MOSFET (Metal Oxide)
    110A
    140W Tc
    Single
    140W
    10 ns
    N-Channel
    7mOhm @ 64A, 7V
    700mV @ 250μA
    4700pF @ 15V
    110A Tc
    110nC @ 4.5V
    140ns
    20V
    4.5V 7V
    ±10V
    130 ns
    96 ns
    110A
    10V
    20V
    4.7nF
    7mOhm
    7 mΩ
    4.83mm
    10.67mm
    9.65mm
    No
    RoHS Compliant
    Lead Free
    -
  • IRL3303L
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    TO-262
    -55°C~175°C TJ
    Tube
    HEXFET®
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    3.8W Ta 68W Tc
    -
    -
    -
    N-Channel
    26mOhm @ 20A, 10V
    1V @ 250μA
    870pF @ 25V
    38A Tc
    26nC @ 4.5V
    -
    30V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
  • IRL3103L
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2002
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    94W Tc
    -
    -
    -
    N-Channel
    12m Ω @ 34A, 10V
    1V @ 250μA
    1650pF @ 25V
    64A Tc
    33nC @ 4.5V
    -
    30V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    EAR99
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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