Infineon Technologies IRL3202S

Name: IRL3202S
Brand: Infineon Technologies
SKU: 2853716-IRL3202S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3202S

Manufacturer:: Infineon Technologies

Ventron No:: 2853716-IRL3202S

Description:: MOSFET N-CH 20V 48A D2PAK

ECAD Model:

Datasheet:: IRL3202S

Specifications

Infineon Technologies IRL3202S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3202S.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
MATTE TIN OVER NICKEL
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
69W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 29A, 7V
Vgs(th) (Max) @ Id
700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 15V
Current - Continuous Drain (Id) @ 25°C
48A Tc
Gate Charge (Qg) (Max) @ Vgs
43nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 7V
Vgs (Max)
±10V
Drain Current-Max (Abs) (ID)
48A
Drain-source On Resistance-Max
0.019Ohm
Pulsed Drain Current-Max (IDM)
190A
DS Breakdown Voltage-Min
20V
Avalanche Energy Rating (Eas)
270 mJ
RoHS Status
Non-RoHS Compliant

Description

IRL3202S Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 270 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2000pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 48A.Peak drain current is 190A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 20V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (4.5V 7V), this device contributes to a reduction in overall power consumption.

IRL3202S Features
the avalanche energy rating (Eas) is 270 mJ
based on its rated peak drain current 190A.
a 20V drain to source voltage (Vdss)

IRL3202S Applications
There are a lot of Infineon Technologies
IRL3202S applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IRL3202S More Descriptions

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET N-CH 20V 48A D2PAK
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:48A; On-Resistance, Rds(on):16mohm; Rds(on) Test Voltage, Vgs:7V; Package/Case:D2-PAK; Drain Source On Resistance @ 4.5V:19mohm RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to IRL3202S.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Lead Free

Radiation Hardening

View Compare
IRL3202S

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~150°C TJ

Tube

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN OVER NICKEL

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

69W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

16m Ω @ 29A, 7V

700mV @ 250μA

2000pF @ 15V

48A Tc

43nC @ 4.5V

20V

4.5V 7V

±10V

48A

0.019Ohm

190A

20V

270 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL3202PBF

Infineon Technologies

Through Hole

TO-220-3

-

-

-55°C~150°C TJ

Tube

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

69W Tc

-

-

N-Channel

-

16mOhm @ 29A, 7V

700mV @ 250μA

2000pF @ 15V

48A Tc

43nC @ 4.5V

20V

4.5V 7V

±10V

-

-

-

-

-

RoHS Compliant

Through Hole

3

TO-220AB

150°C

-55°C

20V

48A

Single

69W

8.5 ns

100ns

82 ns

12 ns

48A

10V

20V

2nF

100 ns

19mOhm

16 mΩ

700 mV

15.24mm

10.5156mm

4.69mm

No SVHC

Lead Free

-

IRL3202S vs IRL3202PBF
IRL3502SPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tube

HEXFET®

2003

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

140W Tc

-

-

N-Channel

-

7mOhm @ 64A, 7V

700mV @ 250μA

4700pF @ 15V

110A Tc

110nC @ 4.5V

20V

4.5V 7V

±10V

-

-

-

-

-

RoHS Compliant

Surface Mount

3

D2PAK

150°C

-55°C

20V

110A

Single

140W

10 ns

140ns

130 ns

96 ns

110A

10V

20V

4.7nF

-

7mOhm

7 mΩ

-

4.83mm

10.67mm

9.65mm

-

Lead Free

No

IRL3202S vs IRL3502SPBF
IRL3303L

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

1997

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.8W Ta 68W Tc

-

-

N-Channel

-

26mOhm @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

30V

4.5V 10V

±16V

-

-

-

-

-

Non-RoHS Compliant

-

-

TO-262

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL3202S vs IRL3303L