Infineon Technologies IRL3502S
- Part Number:
- IRL3502S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813785-IRL3502S
- Description:
- MOSFET N-CH 20V 110A D2PAK
- ECAD Model:
-
- Datasheet:
- IRL3502S
Infineon Technologies IRL3502S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3502S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1998
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max140W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7m Ω @ 64A, 7V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4700pF @ 15V
- Current - Continuous Drain (Id) @ 25°C110A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 7V
- Vgs (Max)±10V
- RoHS StatusNon-RoHS Compliant
IRL3502S Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4700pF @ 15V maximal input capacitance.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 7V).
IRL3502S Features
a 20V drain to source voltage (Vdss)
IRL3502S Applications
There are a lot of Infineon Technologies
IRL3502S applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4700pF @ 15V maximal input capacitance.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 7V).
IRL3502S Features
a 20V drain to source voltage (Vdss)
IRL3502S Applications
There are a lot of Infineon Technologies
IRL3502S applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRL3502S More Descriptions
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power Field-Effect Transistor, 110A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
French Electronic Distributor since 1988
Power Field-Effect Transistor, 110A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRL3502S.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsSupplier Device PackageTerminationResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingLead PitchElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCLead FreeNumber of ElementsRadiation HardeningRecovery TimeView Compare
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IRL3502SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTubeHEXFET®1998Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)140W TcN-Channel7m Ω @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V20V4.5V 7V±10VNon-RoHS Compliant---------------------------------- -
Through HoleTO-220-3-55°C~175°C TJTubeHEXFET®2003Obsolete1 (Unlimited)-MOSFET (Metal Oxide)68W TcN-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V30V4.5V 10V±16VRoHS CompliantThrough Hole3TO-220ABThrough Hole26MOhm175°C-55°C30V34A2.54mmSingle56W7.4 ns200ns36 ns14 ns38A1V16V30V30V870pF40mOhm26 mΩ1 V15.24mm10.5156mm4.69mmNo SVHCLead Free---
-
Through HoleTO-220-3-55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)-MOSFET (Metal Oxide)140W TcN-Channel7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V20V4.5V 7V±10VRoHS CompliantThrough Hole3TO-220AB--150°C-55°C20V110A-Single140W10 ns140ns130 ns96 ns110A-10V20V-4.7nF8mOhm7 mΩ-----Lead Free1No-
-
Through HoleTO-220-3-55°C~150°C TJTubeHEXFET®2004Obsolete1 (Unlimited)-MOSFET (Metal Oxide)69W TcN-Channel16mOhm @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V20V4.5V 7V±10VRoHS CompliantThrough Hole3TO-220AB--150°C-55°C20V48A-Single69W8.5 ns100ns82 ns12 ns48A-10V20V-2nF19mOhm16 mΩ700 mV15.24mm10.5156mm4.69mmNo SVHCLead Free--100 ns
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